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T. R. Lepkowski
Observed names:
T. Lepkowski,
T.R. Lepkowski
Observed institutions:
Ford Motor Company (United States),
University of Illinois Urbana-Champaign
OpenAlex ID:
A5060772357
Characterization of high-purity Si-doped molecular beam epitaxial GaAs
1985
·
B. J. Skromme
, S. S. Bose
, et al.
·
Journal of Applied Physics
·
98
Depletion corrections in variable temperature Hall measurements
1987
·
T. R. Lepkowski
, R. Y. DeJule
, et al.
·
Journal of Applied Physics
·
28
Half-micrometer gate-length ion-implanted GaAs MESFET with 0.8-dB noise figure at 16 GHz
1989
·
C.L. Lau
, M. Feng
, et al.
·
IEEE Electron Device Letters
·
22
High-performance millimeter-wave ion-implanted GaAs MESFETs
1989
·
G.W. Wang
, M. Feng
, et al.
·
IEEE Electron Device Letters
·
18
Neutron transmutation doping of high purity GaAs
1985
·
T. S. Low
, M. H. Kim
, et al.
·
Journal of Electronic Materials
·
18
A GaAs integrated hall sensor/amplifier
1986
·
T.R. Lepkowski
, G. Shade
, et al.
·
IEEE Electron Device Letters
·
17
0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs
1989
·
G.W. Wang
, M. Feng
, et al.
·
IEEE Electron Device Letters
·
9
Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide
1989
·
B. Lee
, K. Arai
, et al.
·
Journal of Applied Physics
·
8
Ultrahigh-frequency performance of submicrometer-gate ion-implanted GaAs MESFETs
1989
·
G.W. Wang
, M. Feng
, et al.
·
IEEE Electron Device Letters
·
8
Millimeter wave monolithic IC's using direct ion implantation in to GaAs LEC substrates
2002
·
C.L. Lau
, M. Feng
, et al.
·
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium
·
5
44 GHz hybrid low noise amplifiers using ion-implanted In/sub x/Ga/sub 1-x/As MESFETs
2002
·
C.L. Lau
, M. Feng
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
5
60-GHz noise performance of ion-implanted In/sub x/Ga/sub 1-x/As MESFET's
1991
·
C.L. Lau
, M. Feng
, et al.
·
IEEE Electron Device Letters
·
5
Benefits and Challenges in Decreasing GaAs Through Substrate Via Size and Die Thickness
2002
·
H. T. Hendriks
, A.W. Hanson
, et al.
·
4
60-GHz power performance of ion-implanted In/sub x/Ga/sub (1-x/)As/GaAs MESFETs
1990
·
M. Feng
, C.L. Lau
, et al.
·
IEEE Electron Device Letters
·
4
44 GHz hybrid low noise amplifiers using ion-implanted InxGa1-xAs MESFETs
1990
·
C.L. Lau
, M. Feng
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
4
Challenges in Rapidly Scaling up Back-side Processing of GaAs Wafers
2001
·
H. T. Hendriks
, Jim Crites
, et al.
·
2
A High-Performance, Low-Temperature Self-Aligned Gate E/D Process
1986
·
S. P. Kwok
, Y. Chang
, et al.
·
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium
Automated Variable Temperature Hall Effect Measurements and Analysis of N-Type Gallium-Arsenide, Indium-Phosphide and Their Lattice Matched Alloy Semiconductors (Hall Effect)
1985
·
T. R. Lepkowski
·
Illinois Digital Environment for Access to Learning and Scholarship (University of Illinois at Urbana-Champaign)
Characterization of high purity Si-doped molecular beam epitaxial GaAs
1984
·
B. J. Skromme
, Sukanta Bose
, et al.
·
Defense Technical Information Center (DTIC)
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Works count:
19
Citation count:
255
H-index:
8
I10-index:
6
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