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Debasis Mukherjee

ORCID: 0000-0003-3958-7251
Observed ORCID: 0000-0003-3958-7251
OpenAlex ID: A5060926958
Static Noise Margin Analysis of SRAM Cell for High Speed Application
2010 · Debasis Mukherjee, Hemanta Kr · 57
Bird strike-induced damage studies on bio-inspired laminated plates with holes
2025 · Aman Garg, Neeraj Kumar Shukla, et al. · Aerospace Science and Technology · 33
Design and development of a novel MOSFET structure for reduction of reverse bias pn junction leakage current
2018 · B. V. R. Reddy, Debasis Mukherjee · International Journal of Intelligence and Sustainable Computing · 18
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Leakage Current Reduction in 6T Single Cell SRAM at 90nm Technology
2010 · Shilpi Birla, Neeraj Kr. Shukla, et al. · International Conference on Advances in Computer Engineering · 18
Analysis of dark current and detectivity of CdS/ZnSe Based multiple quantum well photodetector for mid-infrared applications
2022 · Bhaskar Roy, Md Aref Billaha, et al. · Physica E Low-dimensional Systems and Nanostructures · 11
Leakage Current Minimization in Deep-Submicron Conventional Single Cell SRAM
2010 · Neeraj Kr. Shukla, Debasis Mukherjee, et al. · International Conference on Recent Trends in Information, Telecommunication and Computing (ITC) · 7
Design and Investigation of Split Gate Dielectric Modulated JLFET for Detection of Biological Molecule Using TCAD Simulation
2022 · Rajkumar Mandal, Debasis Mukherjee · Silicon · 5
A novel method for reduction of leakage current in MOSFET
2018 · Debasis Mukherjee, B.V. Ramana Reddy · International Journal of Convergence Computing · 5
Influence of uncertainties in a battery pack with air cooling for electric vehicles on temperature difference and volume of battery module
2025 · Anshu Sharma, Neeraj Kumar Shukla, et al. · Journal of Energy Storage · 4
Development of a Low-Cost CNC Machine Laser Engraver
2021 · Zain Hossain Khan, Tashinur Rahman, et al. · IEEE Annual Ubiquitous Computing, Electronics & Mobile Communication Conference (UEMCON) · 4
EFFECT OF MOSFET p-n JUNCTION LENGTH ON LEAKAGE CURRENT
2016 · Debasis Mukherjee, B. V. Ramana Reddy · Far East Journal of Electronics and Communications · 4
Leakage Process and Minimization -Transistor Stacking Effect, Data Retention Gated Ground Cache, Drowsy Cache
2011 · Debasis Mukherjee, B.V.R. Reddy · Advanced materials research · 4
Implementation of ARINC 429 16 Channel Transmitter Controller on FPGA
2011 · Debasis Mukherjee, Niti Kumar, et al. · Communications in computer and information science · 4
Ergonomics in Education: A Multiparametric Analysis of Seating Workstation
2025 · Kausalyah Venkatason, Sahirah Achmad, et al. · Semarak International Journal of Innovation in Learning and Education · 3
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U shaped vertical gate bulk MOSFET for area minimization
2017 · Debasis Mukherjee, B. V. Ramana Reddy · Journal of Information and Optimization Sciences · 3
A Strategic Review on MIR Photodetectors: Recent Status and Future Trends
2023 · Bhaskar Roy, Md. Aref Billaha, et al. · Lecture notes in networks and systems · 2
Design of cost effective transistor by software simulation for profitable production
2020 · Debasis Mukherjee, B.V. Ramana Reddy · International Journal of Intelligent Enterprise · 2
A Voltage Producing Smart Wheelchair Development with Heartbeat Monitoring System
2021 · Tanjir Arafat, MD Anisur Zaman, et al. · IEEE Annual Ubiquitous Computing, Electronics & Mobile Communication Conference (UEMCON) · 1
Algorithm design, software simulation and mathematical modelling of subthreshold leakage current in CMOS circuits
2019 · Debasis Mukherjee, B.V. Ramana Reddy · International Journal of Computational Complexity and Intelligent Algorithms · 1
Analysis of P-N Junction Length of Drain and Source in MOSFET Transistor Through TCAD Simulation
2024 · Debasis Mukherjee · Journal of Electrical Systems
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Analysis Of P-N Junction Length of Drain and Source in MOSFET Transistor Through TCAD Simulation
2024 · Debasis Mukherjee · Journal of Electrical Systems
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Design and development of integrated low power high performance MOSFET structure
2023 · Debasis Mukherjee · CRC Press eBooks
Study the Sensing Performance with Catalytic Metals of Passivated InAlN/GaN Schottky Diode Gas Sensor
2022 · Bhaskar Roy, Md. Aref Billaha, et al. · IEEE VLSI Device Circuit and System (VLSI DCS)
Algorithm Design, Software Simulation and Mathematical Modeling of Subthreshold Leakage Current in CMOS Circuits
2018 · B. V. R. Reddy, Debasis Mukherjee · International Journal of Computational Complexity and Intelligent Algorithms
Works count: 24
Citation count: 186
H-index: 6
I10-index: 5
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