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Author

Damir Borovac

Observed name: Borovac Damir
Institution: OSRAM (Germany)
ORCID: 0000-0002-2762-0790
Observed ORCID: 0000-0002-2762-0790
OpenAlex ID: A5061519429
InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters
2016 · Chee-Keong Tan, Damir Borovac, et al. · Scientific Reports · 36
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Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters
2016 · Chee-Keong Tan, Wei Sun, et al. · Scientific Reports · 28
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First-Principle Electronic Properties of Dilute-P GaN1−xPx Alloy for Visible Light Emitters
2016 · Chee-Keong Tan, Damir Borovac, et al. · Scientific Reports · 22
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Thermal Oxidation of AlInN for III-Nitride Electronic and Optoelectronic Devices
2019 · Matthew R. Peart, Xiongliang Wei, et al. · ACS Applied Electronic Materials · 20
Band Anti-Crossing Model in Dilute-As GaNAs Alloys
2019 · Justin C. Goodrich, Damir Borovac, et al. · Scientific Reports · 18
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On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE
2019 · Damir Borovac, Wei Sun, et al. · Journal of Crystal Growth · 16
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Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers
2019 · Syed Ahmed Al Muyeed, Wei Sun, et al. · Journal of Applied Physics · 16
First-Principle Study of the Optical Properties of Dilute-P GaN1−xPx Alloys
2018 · Damir Borovac, Chee-Keong Tan, et al. · Scientific Reports · 16
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Investigations of the Optical Properties of GaNAs Alloys by First-Principle
2017 · Damir Borovac, Chee-Keong Tan, et al. · Scientific Reports · 13
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Thermal oxidation rates and resulting optical constants of Al0.83In0.17N films grown on GaN
2021 · Elia Palmese, Matthew R. Peart, et al. · Journal of Applied Physics · 9
Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy
2020 · Damir Borovac, Wei Sun, et al. · Journal of Crystal Growth · 9
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Dilute-As AlNAs Alloy for Deep-Ultraviolet Emitter
2016 · Chee-Keong Tan, Damir Borovac, et al. · Scientific Reports · 9
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AlInN/GaN diodes for power electronic devices
2020 · Matthew R. Peart, Damir Borovac, et al. · Applied Physics Express · 8
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First-principle electronic properties of dilute-P AlNP deep ultraviolet semiconductor
2018 · Damir Borovac, Chee-Keong Tan, et al. · AIP Advances · 8
InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output power
2023 · Sven Gerhard, Lars Naehle, et al. · Gallium Nitride Materials and Devices · 5
Recombination Rates of InxGa1−xN/AlyGa1−yN/GaN Multiple Quantum Wells Emitting From 640 to 565 nm
2021 · Syed Ahmed Al Muyeed, Damir Borovac, et al. · IEEE Journal of Quantum Electronics · 5
Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates
2020 · Syed Ahmed Al Muyeed, Xiongliang Wei, et al. · Journal of Crystal Growth · 5
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Options for cost and performance improvements and integrated emitter design in GaN based electro-optical devices
2025 · Lars Nähle, Sven Gerhard, et al. · Light-Emitting Devices, Materials, and Applications · 4
Prospects for hole doping in dilute-anion III-nitrides
2021 · Justin C. Goodrich, Chee-Keong Tan, et al. · Applied Physics Letters · 4
Delta InN-InGaN Quantum Wells With AlGaN Interlayers for Long Wavelength Emission
2022 · Ioannis E. Fragkos, Wei Sun, et al. · IEEE Journal of Quantum Electronics · 3
Electronic properties of dilute-As InGaNAs alloys: A first-principles study
2020 · Damir Borovac, Wei Sun, et al. · Journal of Applied Physics · 3
Dilute-As InGaNAs/GaN Quantum Wells for High-Efficiency Red Emitters
2022 · Wei Sun, Hanlin Fu, et al. · IEEE Journal of Quantum Electronics · 2
Experimental Studies of Delta-InN Incorporation in InGaN Quantum Well for Long Wavelength Emission
2018 · Ioannis E. Fragkos, Damir Borovac, et al. · IEEE Photonics Conference · 2
Investigation of refractive index in dilute-P GaNP alloys by first-principle
2017 · Damir Borovac, Chee-Keong Tan, et al. · IEEE Photonics Conference · 2
GaN biosensor design with localized surface plasmon resonance
2021 · Zane D. Henderson, Damir Borovac, et al. · Physics and simulation of optoelectronic devices. Conference · 1
Works count: 39
Citation count: 264
H-index: 9
I10-index: 9
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