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A. Bouhdada
Observed names:
A BOUHDADA,
A Bouhdada,
Ammar Bouhdada,
Bouhdada, A.
Institution:
University of Hassan II Casablanca
Observed institutions:
Université Hassan II Mohammedia,
University of Hassan II Casablanca
OpenAlex ID:
A5064876605
Impact of the defects on the electrical and optical properties of AlGaN ultraviolet photodetectors
2002
·
M. Hanzaz
, A. Bouhdada
, et al.
·
Journal of Applied Physics
·
44
Modelling of gate-induced drain leakage in relation to technological parameters and temperature
1997
·
A. Bouhdada
, S. Bakkali
, et al.
·
Microelectronics Reliability
·
32
Electrical and optical proprieties of photodiodes based on ZnSe material
2003
·
A. Bouhdada
, M. Hanzaz
, et al.
·
Applied Physics Letters
·
22
Magnetic coupling in amorphous Fe80−xGdxB20 alloys
2000
·
A Hassini
, H Lassri
, et al.
·
Physica B Condensed Matter
·
15
Modeling of the spectral response of AlxGa1−xN Schottky ultraviolet photodetectors
2000
·
A. Bouhdada
, M. Hanzaz
, et al.
·
Journal of Applied Physics
·
11
Impact of interface traps on gate-induced drain leakage current inn-type metal oxide semiconductor field effect transistor
2005
·
A. Touhami *
, A. Bouhdada
·
International Journal of Electronics
·
10
Modeling of gate-induced drain leakage current in n-type metal–oxide–semiconductor field effect transistor
2001
·
A. Touhami
, A. Bouhdada
·
Journal of Applied Physics
·
9
New model of gate-induced drain current density in an NMOS transistor
1998
·
A. Bouhdada
, A. Touhami
, et al.
·
Microelectronics Journal
·
8
Two new temperature compensated current sources
1997
·
A. Fabre
, M. Alami
, et al.
·
IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications
·
7
Modeling of the threshold voltage variation for a stressed submicronic MOSFET
2001
·
A. Bouhdada
, R. Marrakh
·
International Conference on Microelectronics (ICM)
·
6
Characterization of leakage currents in long-lifetime capacitors
1986
·
J. Oualid
, A. Bouhdada
·
IEEE Transactions on Electron Devices
·
6
Modeling of the spectral response of PIN photodetectors Impact of exposed zone thickness, surface recombination velocity and trap concentration
2003
·
A Bouhdada
, R Marrakh
, et al.
·
Microelectronics Reliability
·
5
Modeling of the spectral response of AlxGa1−xN p-n junction photodetectors
2000
·
M. Hanzaz
, A. Bouhdada
, et al.
·
The European Physical Journal Applied Physics
·
4
Modeling of Surface Potential and Threshold Voltage of LDD nMOSFET′s with Localized Defects
2000
·
A. Bouhdada
, R. Marrakh
·
Active and Passive Electronic Components
·
3
PDF
Modeling of Interface Defect Distribution for an n‐MOSFETs Under Hot‐Carrier Stressing
2000
·
R. Marrakh
, A. Bouhdada
·
Active and Passive Electronic Components
·
3
PDF
Relation between the leakage currents and the defects created in the oxide and at the interface in a short channel NMOS transistor
1997
·
A. Bouhdada
, S. Bakkali
, et al.
·
Microelectronics Journal
·
3
Magnetic study in amorphous Fe67Y33 alloy
2001
·
A. Hassini
, A. Bouhdada
, et al.
·
Journal of Applied Physics
·
2
Impact of the Stress on the Sub‐Micron N‐Metal Oxide Semiconductor Field Effect Transistor Characteristics
2001
·
R. Marrakh
, A. Bouhdada
·
Active and Passive Electronic Components
·
2
PDF
Influence of Gd on the Magnetic Properties of Amorphous (Fe1—xGdx)80B20
1999
·
A. Hassini
, M. Slimani
, et al.
·
physica status solidi (a)
·
2
Effect of defects localised in the oxide of submicrometer NMOS transistor on substrate and drain currents
1999
·
A. Bouhdada
, A. Nouacry
, et al.
·
Microelectronics Journal
·
2
MOS capacitor holding time and diffusion length at DRAM refresh test temperature
1995
·
Ammar Bouhdada
, Jean Oualid
·
Microelectronics Journal
·
2
Relation between the leakage currents and defects in oxide and interface Si/SiO/sub 2/ in MOS devices
2002
·
A. Bouhdada
, S. Bakkali
, et al.
·
IEEE International Conference on Microelectronics (MIEL)
·
1
The n-type metal oxide semiconductor field-effect transistor bias impact on the modelling of the gate-induced drain leakage current
2002
·
A Touhami
, A Bouhdada
·
Semiconductor Science and Technology
·
1
Influence des états d'interface et de la température sur l'inefficacité de transfert des dispositifs à transfert de charge en surface ≪ SCCD ≫
1994
·
A. Bouhdada
, A. Touhami
·
Journal de Physique III
·
1
Magnetization studies in amorphous Co80-x Gdx B20
2011
·
Hassini, A.
, Bouhdada, A.
·
PRSM
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Works count:
30
Citation count:
201
H-index:
8
I10-index:
6
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