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Toyoshi Yamaoka
Observed names:
T. YAMAOKA,
T. Yamaoka,
Toyoshi YAMAOKA
Institution:
Fujitsu (Japan)
Observed institution:
Fujitsu (Japan)
OpenAlex ID:
A5065002937
Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 µm
1978
·
H. Ando
, H. Kanbe
, et al.
·
IEEE Journal of Quantum Electronics
·
107
Degradation of high-radiance Ga1−xAlxAs LED’s
1977
·
Shigenobu Yamakoshi
, Osamu Hasegawa
, et al.
·
Applied Physics Letters
·
81
Vapor Phase Epitaxial Growth of MgO · Al2 O 3
1982
·
Masaru Ihara
, Yoshihiro Arimoto
, et al.
·
Journal of The Electrochemical Society
·
76
Ionization rates for electrons and holes in GaAs
1978
·
Masanori Ito
, Shuzo Kagawa
, et al.
·
Journal of Applied Physics
·
62
Determination of In-Ga-As phase diagram at 650 °C and LPE growth of lattice-matched In0.53Ga0.47As on InP
1979
·
Kazuo Nakajima
, Toshiyuki Tanahashi
, et al.
·
Journal of Applied Physics
·
60
Self-aligned contact process for Nb/Al-AlOx/Nb Josephson junctions
1986
·
Shin’ichi Morohashi
, Shinya Hasuo
, et al.
·
Applied Physics Letters
·
50
LPE Growth of Misfit Dislocation‐Free Thick In1 − x Ga x As Layers on InP
1980
·
Kazuo Nakajima
, Satoshi Komiya
, et al.
·
Journal of The Electrochemical Society
·
44
PDF
High-efficiency long-lived GaAlAs LED's for fiber-optical communications
1977
·
M. Abe
, I. Umebu
, et al.
·
IEEE Transactions on Electron Devices
·
38
A model for reach-through avalanche photodiodes (RAPD’s)
1976
·
Takao Kaneda
, Hideo Matsumoto
, et al.
·
Journal of Applied Physics
·
37
Impact ionisation ratio in In 0.73 Ga 0.27 As 0.57 P 0.43
1978
·
Masanori Ito
, Takao Kaneda
, et al.
·
Electronics Letters
·
36
Transmission electron microscope observation of dark-spot defects in InGaAsP/InP double-heterostructure light-emitting diodes aged at high temperature
1980
·
Osamu Ueda
, Shigenobu Yamakoshi
, et al.
·
Applied Physics Letters
·
33
Avalanche buildup time of silicon reach-through photodiodes
1976
·
Takao Kaneda
, Hirobumi Takanashi
, et al.
·
Journal of Applied Physics
·
28
Defect structure of 〈100〉 dark lines in the active region of a rapidly degraded Ga1−xAlxAs LED
1977
·
Osamu Ueda
, Shoji Isozumi
, et al.
·
Journal of Applied Physics
·
27
9 ps Gate Delay Josephson OR Gate with Modified Variable Threshold Logic
1985
·
Norio Fujimaki
, Seigo Kotani
, et al.
·
Japanese Journal of Applied Physics
·
23
PDF
Excess noise in silicon avalanche photodiodes
1976
·
T. Kaneda
, H. Matsumoto
, et al.
·
Journal of Applied Physics
·
22
Formation of low defect density SiOx films for Josephson integrated circuits
1985
·
H. Shibayama
, S. Hasuo
, et al.
·
Applied Physics Letters
·
21
Current Injection Effects in a Nb/AlOx-Al/Nb/n-InSb Triode
1985
·
Hirotaka Tamura
, Shinya Hasuo
, et al.
·
Japanese Journal of Applied Physics
·
20
PDF
Abrupt degradation of three types of semiconductor light emitting diodes at high temperature
1980
·
Osamu Ueda
, Hajime Imai
, et al.
·
Journal of Applied Physics
·
17
Silicon avalanche photodiodes
1976
·
Toyoshi Yamaoka
, Hideo Matsumoto
, et al.
·
Fujitsu Scientific and Technical Journal
·
16
Transmission Electron Microscope Observation of Mechanically Damaged InGaAsP/InP Double-Heterostructure Light-Emitting Diode
1980
·
Osamu Ueda
, Shigenobu Yamakoshi
, et al.
·
Japanese Journal of Applied Physics
·
13
PDF
Fabrication technology for lead-alloy Josephson devices for high-density integrated circuits
1986
·
T. Imamura
, H. Hoko
, et al.
·
Journal of Applied Physics
·
10
Efficient coupling of LED and spherical-ended fiber
1978
·
Osamu Hasegawa
, Masayuki Abe
, et al.
·
Journal of Applied Physics
·
10
Spinel-Isolated high-voltage ICs
1981
·
M. Ihara
, Y. Arimoto
, et al.
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
8
5.6 ps Gate Delay All Refractory Josephson OR Gate with Modified Variable Threshold Logic
1985
·
Seigo Kotani
, Norio Fujimaki
, et al.
·
Japanese Journal of Applied Physics
·
6
Characteristics of a counter-electrode coupled logic gate using Josephson junctions
1981
·
S. Hasuo
, H. Suzuki
, et al.
·
IEEE Transactions on Magnetics
·
6
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Works count:
48
Citation count:
894
H-index:
17
I10-index:
22
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