2015 · A. A. Arendarenko, V. A. Oreshkin, et al. · Izvestiya Vysshikh Uchebnykh Zavedenii Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering · 5

PDF

Effect of microwave treatment on current flow mechanisms in Au-TiBx-Al-Ti-n+-n-n+-GaN-Al2O3 ohmic contacts

2010 · A. E. Belyaev, N. S. Boltovets, et al. · Semiconductors · 5

Heat-Resistant Au-TiBx-n-GaN Schottky Diodes

2006 · A. Belyaev, N. Boltovets, et al. · International Crimean Conference Microwave and Telecommunication Technology · 5

Thermal stability of multilayer contacts on gallium nitride

2005 · A. E. Belyaev, N. S. Boltovets, et al. · Technical Physics Letters · 5

Electrophysical properties of GaAs layers and the characteristics of fast particle GaAs detectors

2004 · V. A. Bespalov, A. V. Vorontsov, et al. · Technical Physics · 5

Mechanism of current flow in a Au-Ti-Al-Ti-n +-GaN ohmic contact in the temperature range of 4.2–300 K

2014 · A. V. Sachenko, A. E. Belyaev, et al. · Semiconductors · 3

PDF

Radiation damage of contact structures with diffusion barriers exposed to irradiation with 60Coγ-ray photons

2010 · A. E. Belyaev, N. S. Boltovets, et al. · Semiconductors · 3

Radiation effects in multilayer ohmic contacts Au-Ti-Al-Ti-n-GaN

2009 · A. E. Belyaev, N. S. Boltovets, et al. · Semiconductors · 2

On the nucleation model for gallium nitride films grown on sapphire

2005 · E. N. Vigdorovich, A. A. Arendarenko, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2

The growth rate of GaN epilayers in HVPE process

2003 · A. A. Arendarenko, E. N. Vigdorovich, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2

The Investigation of a Transition Layer in Epitaxial GaAs by the Low Temperature Photoluminescence Technique

1985 · Yu. V. Zhilyaev, V. V. Krivolapchuk, et al. · physica status solidi (a) · 2

Effect of Weak Magnetic Field Treatment on Optical Properties of Epitaxial GaN Films

2015 · R.A. Red´ko, R.V. Konakova, et al. · The Open Surface Science Journal · 1

PDF

Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays

2018 · S. V. Chernykh, A. V. Chernykh, et al. · Instruments and Experimental Techniques

Study of fractal features morphology of surface HEMT GAN heterostructures on foreign substrates

2011 · N. A. Torkhov, V. G. Bozhkov, et al. · International Crimean Conference Microwave and Telecommunication Technology

Nitride gallium high power integrated heterostructure FETs

2010 · Yu. N. Rakov, N. V. Monchares, et al. · International Crimean Conference Microwave and Telecommunication Technology

Optimization of technology of growing GaN heterostructures with using diffractometry analysis

2009 · I. G. Ermoshin, I. N. Tsyplenkov, et al. · Semiconductors

Works count: 30

Citation count: 165

H-index: 7

I10-index: 5