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K. Ahmeda

Observed names: Ahmeda, Khaled, K Ahmeda, Khaled Ahmeda
ORCID: 0000-0003-0710-5764
Observed ORCID: 0000-0003-0710-5764
OpenAlex ID: A5067564725
Role of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures
2017 · Khaled Ahmeda, Brendan Ubochi, et al. · IEEE Access · 29
A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs
2020 · S. J. Duffy, B. Benbakhti, et al. · IEEE Transactions on Electron Devices · 23
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Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications
2024 · Naeemul Islam, Mohamed Fauzi Packeer Mohamed, et al. · IEEE Access · 17
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The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation
2020 · K. Ahmeda, B. Ubochi, et al. · Microelectronics Reliability · 13
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Impact of interface traps/defects and self‐heating on the degradation of performance of a 4H‐SiC VDMOSFET
2019 · Mustafa H. Alqaysi, Antonio Martinez, et al. · IET Power Electronics · 13
Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs
2017 · Brendan Ubochi, Khaled Ahmeda, et al. · ECS Journal of Solid State Science and Technology · 13
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Operational frequency degradation induced trapping in scaled GaN HEMTs
2017 · Brendan Ubochi, Soroush Faramehr, et al. · Microelectronics Reliability · 12
Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices
2017 · K. Ahmeda, B. Ubochi, et al. · European Microwave Integrated Circuits Conference · 4
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Analysis Of The Reliability Of Passivation Layer And Interface Charge On Breakdown Voltage of E-Mode AlGaN/GaN MISHEMTs Device
2023 · Naeemul Islam, Mohamed Fauzi Packeer Mohamed, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 3
A Source and Drain Transient Currents Technique for Trap Characterisation in AIGaN/GaN HEMTs
2018 · S. J. Duffy, B. Benbakhti, et al. · European Microwave Integrated Circuits Conference · 3
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Vertical GaN-on-GaN finFETs: Effect of SiN$_{x}$ Spacer Layer on Breakdown Voltage and Device Stability Under Gate Bias Stress
2026 · Chengzhi Zhang, Aditya K. Bhat, et al. · IEEE Transactions on Electron Devices · 2
Acoustical Characteristics of Proton Exchange Membrane Fuel Cells
2021 · Mohmad Al-Rweg, Khaled Ahmeda, et al. · IEEE Access · 2
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Influence of temperature and dimension in a 4H-SiC vertical power MOSFET
2020 · M H Alqaysi, A Martinez, et al. · Engineering Research Express · 2
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Scaling and traps induced degradation of cutoff frequency in GaN HEMT
2016 · Brendan Ubochi, Soroush Faramehr, et al. · IEEE Conference Proceedings · 1
Vertical GaN Schottky barrier diodes on native (GaN) and non-native (Si) substrates with mesa edge termination and comparable critical electric field
2026 · Kumar, Mritunjay, Zhang, Chengzhi, et al. · Zenodo (CERN European Organization for Nuclear Research)
Vertical GaN Schottky barrier diodes: Impact of device dimensions and micro-masking on mesa edge termination
2026 · Mritunjay Kumar, Chengzhi Zhang, et al. · Applied Physics Letters
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Simulations of p‐Channel GaN‐Based Metal‐Oxide‐Semiconductor Heterostructure Field‐Effect Transistors for Normally Off Operation
2026 · Brendan Ubochi, Khaled Ahmeda, et al. · physica status solidi (a)
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Investigation of Defects Generation on Self-Heating of GaN HEMTs
2026 · K. Ahmeda, B. Ubochi, et al. · Journal of Physics Conference Series
Self-Heating and Hotspots in GaN HEMTs with Conventional and T-Shape Gates
2024 · B. Ubochi, K. Ahmeda, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
Buffer trapping effects on knee walkout in GaN HEMTs
2017 · B. Ubochi, K. Ahmeda, et al. · IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS)
A Source and Drain Transient Currents Technique for Trap Characterisation in AlGaN/GaN Based Devices
2017 · Duffy, Steven, Benbakhti, Brahim, et al. · HAL
Scaling and traps induced degradation of cutoff frequency in GaN HEMT
2016 · B. C. Ubochi, S. Faramehr, et al. · International Conference on Advanced Semiconductor Devices and Microsystems
The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices
2016 · K. Ahmeda, S. Faramehr, et al. · International Conference on Advanced Semiconductor Devices and Microsystems
スケーリングとトラップはGaNH EMTにおけるカットオフ周波数の分解を誘導する【Powered by NICT】
2016 · B C Ubochi, S Faramehr, et al. · IEEE Conference Proceedings
AlGaN/GaNヘテロ接合を基にしたデバイスにおける自己加熱と電気的ストレス誘起分極の影響【Powered by NICT】
2016 · K. Ahmeda, Soroush Faramehr, et al. · IEEE Conference Proceedings
Works count: 26
Citation count: 137
H-index: 7
I10-index: 7
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