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R. Schachter

Observed names: ROZALIE, SCHACHTER, Rozalie Schachter, SCHACHTER, ROZALIE
Observed institution: Bhabha Atomic Research Centre
OpenAlex ID: A5068786648
The microscopic structure of bulk amorphous red phosphorus: A Raman scattering investigation
1984 · D.J. Olego, J.A. Baumann, et al. · Solid State Communications · 74
GaAs p-i-n photodiodes made by metalorganic chemical vapor deposition using tertiarybutylarsine and arsine
1989 · H. B. Serreze, J. A. Baumann, et al. · Applied Physics Letters · 24
Passivation of the GaAs surface by an amorphous phosphorus overlayer
1984 · D. J. Olego, R. Schachter, et al. · Applied Physics Letters · 20
Interfacial properties of InP and phosphorus deposited at low temperature
1985 · R. Schachter, D. J. Olego, et al. · Applied Physics Letters · 18
The microscope structures of amorphous phosphorus
1985 · D.J. Olego, J.A. Baumann, et al. · Solid State Communications · 18
Semiconductor properties of polyphosphides
1984 · R. Schachter, C. G. Michel, et al. · Applied Physics Letters · 15
High temperature MOVPE growth of GaAs/AlGaAs device structures with tertiarybutylarsine
1990 · J. A. Baumann, C. Michel, et al. · Journal of Electronic Materials · 9
Optoelectronic and structural properties of sputter etched surfaces of InP
1986 · D. J. Olego, R. Schachter, et al. · Applied Physics Letters · 9
Vibrational and electronic properties ofM P15 polyphosphides: KP15 thin films
1985 · D. J. Olego, J. Baumann, et al. · Physical review. B, Condensed matter · 6
Reactive sputtering of polyphosphide thin films by plasma cracking of P4
1985 · R. Schachter, M. Viscogliosi, et al. · Journal of Applied Physics · 5
Summary Abstract: Passivation of the GaAs surface by an amorphous phosphorus overlayer
1985 · D. J. Olego, R. Schachter, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 4
InP metal-insulator-semiconductor field-effect transistors utilizing an amorphous phosphorus gate insulator
1987 · H.B. Serreze, R. Schachter, et al. · IEEE Transactions on Electron Devices · 2
Summary Abstract: Passivation of InP by plasma deposited phosphorus: Effects of surface treatment
1986 · R. Schachter, M. Viscogliosi, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 2
Optical and raman investigation of amorphous polyphosphides
1984 · D. Olego, R. Schachter, et al. · AIP conference proceedings · 2
Novel Polyphosphide Semiconductors with Good Interfacial Properties to INP
1985 · R. Schachter, D. J. Olego, et al. · Springer eBooks · 1
Transport properties of plasma-deposited amorphous polyphosphides
1985 · R. Schachter, D.J. Olego, et al. · Journal of Non-Crystalline Solids
Amorphous Polyphosphide Thin Films Prepared by Sputtering
1984 · Rozalie Schachter, Marcello Viscogliosi · MRS Proceedings
Spur Contribution to Positronium Formation in Molecular Media.
1980 · R. Schachter
Works count: 21
Citation count: 209
H-index: 8
I10-index: 6
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