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Emmanuel Marcault

Heavy-Ion Testing Method and Results of Normally OFF GaN-Based High-Electron-Mobility Transistor
2021 · Jean-Baptiste Sauveplane, Arnaud Dufour, et al. · IEEE Transactions on Nuclear Science · 38
A double side cooled Electronic Power Module
2017 · Jacques Favre, Jean-Michel Reynès, et al. · Open Archive Toulouse Archive Ouverte (University of Toulouse) · 6
Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading
2016 · E. Marcault, D. Tremouilles, et al. · European Conference on Power Electronics and Applications · 6
Impact of source metallization ageing on thermo-mechanical characteristics of a vertical power device
2011 · E. Marcault, M. Breil, et al. · 6
Distributed electrothermal modeling methodology for MOS gated power devices simulations
2013 · E. Marcault, J. L. Massol, et al. · International Conference Mixed Design of Integrated Circuits and Systems · 4
Worst Case Heavy Ion Testing Conditions for Normally Off GaN-Based High Electron Mobility Transistor
2023 · JB. Sauveplane, C. Chabot, et al. · European Conference on Radiation and Its Effects on Components and Systems · 3
Impact of the solder joint ageing on IGBT I–V characteristics using 2D physical simulations
2011 · E. Marcault, M. Breil, et al. · International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) · 3
The Decisive Role of Gate Voltage Overshoots on the Dynamic Ron of Schottky p-GaN HEMTs
2025 · Ludovic Roche, David Trémouilles, et al. · 2
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Performance Analysis of RL Damper in GaN-Based High-Frequency Boost Converter
2020 · A. Gutierrez, E. Marcault, et al. · European Conference on Power Electronics and Applications · 2
Experimental Comparison of Discrete Cascode GaN-GaN and Single e-GaN in High-Frequency Power Converter
2020 · Gutierrez, A, Marcault, E, et al. · HAL · 2
A 1.5-kW totem-pole PFC converter using D-mode (normally-on) GaN HEMTs
2019 · Romain Montheard, Sebastien Carcouet, et al. · IEEE International Conference on Power Electronics and Drive Systems (PEDS) · 2
VDMOS electrical parameters potentially usable as mechanical state indicators for power VDMOS assemblies
2014 · Emmanuel Marcault, Abdelhakim Bourennane, et al. · IET Circuits Devices & Systems · 2
Study of mechanical stress impact on the I–V characteristics of a power VDMOS device using 2D FEM simulations
2012 · E. Marcault, M. Breil, et al. · Microelectronics Reliability · 2
Static vs. dynamic characterization of p-GaN HEMTs: Discrepancies in electrical characteristics and their dependence on bias history
2025 · Ludovic Roche, David Trémouilles, et al. · Power Electronic Devices and Components · 1
Electrical Evaluation of a Modular High Voltage 3D Power Module using Direct Dielectric Liquid Cooling
2025 · Omar Sanjakdar, Yvan Avenas, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 1
Hybrid solution based on ceramic 3D printing for thermal management in power application
2024 · Emmanuel Marcault, Charlotte Meuly, et al. · IEEE Energy Conversion Congress and Exposition (ECCE) · 1
Study of GaN HEMTs Robustness to Application-Like, Software-Controlled Overshoots Emulating Different Gate Routings in Original 50 Ohms Environment
2023 · Ludovic Roche, David Trémouilles, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 1
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Analytic Model of Threshold Voltage (VTH) Recovery in Fully Recessed Gate MOS-Channel HEMT (High Electron Mobility Transistor) after OFF-State Drain Stress
2022 · René Escoffier, Blend Mohamad, et al. · Energies · 1
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Transmission Line Approach for the PCB Gate Interconnection Design in GaN-Based High-Frequency Power Converters
2021 · Gutierrez Galeano, Alonso, Marcault, Emmanuel, et al. · HAL · 1
3D deformation FEM simulations and measurement during VDMOS transistor operation
2012 · E. Marcault, D. Weidmann, et al. · International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) · 1
Impact of VDMOS source metallization ageing in 3D FEM wire lift off modeling
2011 · E. Marcault, T. Azoui, et al. · International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) · 1
GaN HEMTs Dynamic Instabilities Caused by Gate Voltage Spikes via pGaN Potential Biasing
2026 · Roche, Ludovic, Trémouilles, David, et al. · HAL
Time Calibration Method for Near-Field Based Reconstruction of Current in Power Electronic Component
2026 · I. Legros, A. Boyer, et al. · International Symposium on Electromagnetic Compatibility - EMC Europe (EMC Europe)
Numerical Modeling-Enabled High-Temperature Characterization of Boron Doped Diamond Ohmic Contact and Material Resistivity Using a Simplified TLM Structure
2026 · Mateusz Pietrzyk, David Trémouilles, et al. · International Conference Mixed Design of Integrated Circuits and Systems
Méthode d'étalonnage temporel de mesures champ proche pour reconstruction des courants dans un composant de puissance
2026 · Legros, Inès, Boyer, Alexandre, et al. · HAL
Works count: 47
Citation count: 86
H-index: 4
I10-index: 1
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