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Pavel Avdienko

Observed names: Avdienko, P., Avdienko, Pavel, P S Avdienko, P. Avdienko, P. S. Avdienko, P.S. Avdienko, P. S. Avdienko, Pavel S Avdienko, Pavel S. Avdienko, П.С. Авдиенко
ORCID: 0000-0002-3583-4078
Observed ORCID: 0000-0002-3583-4078
OpenAlex ID: A5070109475
Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates
2020 · Sergey V. Sorokin, Pavel S. Avdienko, et al. · Materials · 33
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Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy
2020 · O. S. Komkov, S. A. Khakhulin, et al. · Semiconductors · 14
Broad Range Tuning of InAs Quantum Dot Emission for Nanophotonic Devices in the Telecommunication Bands
2024 · Bianca Scaparra, Elise Sirotti, et al. · ACS Applied Nano Materials · 12
Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties
2019 · S. V. Sorokin, P. S. Avdienko, et al. · Semiconductors · 12
Unveiling the growth mode diagram of GaSe on sapphire
2025 · Michele Bissolo, Marco Dembecki, et al. · Communications Materials · 7
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Structural properties of graded In x Ga 1−x As metamorphic buffer layers for quantum dots emitting in the telecom bands
2023 · Bianca Scaparra, Akhil Ajay, et al. · Materials for Quantum Technology · 7
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Structural and Optical Properties of GaSe/GaAs(001) Layers Grown by Molecular Beam Epitaxy
2019 · P. Avdienko, S. Sorokin, et al. · Acta Physica Polonica A · 6
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Molecular beam epitaxy of wafer-scale O-band InAs/InGaAs quantum dots on GaAs for quantum photonics
2026 · Pavel S. Avdienko, Lukas Hanschke, et al. · APL Materials · 2
Molecular beam epitaxy and polarized excitonic emission of layered GaTe/GaAs thin films
2022 · P.S. Avdienko, I.V. Sedova, et al. · Journal of Crystal Growth · 2
Effect of surface morphology on macroscale and microscale optical properties of layered InSe grown by molecular beam epitaxy
2021 · P. S. Avdienko, I. V. Sedova, et al. · Journal of the Optical Society of America B · 2
Structural and optical properties of quasi-2D GaTe layers grown by molecular beam epitaxy on GaAs (001) substrates
2020 · P S Avdienko, D V Kolyada, et al. · Journal of Physics Conference Series · 2
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Structural properties of ZnSe/InSe/ZnSe heterostructures grown by molecular beam epitaxy on GaAs(001) substrates
2020 · P S Avdienko, D A Kirilenko, et al. · Journal of Physics Conference Series · 2
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Electrically Tunable Orbital Coupling and Quantum Light Emission from O-Band Quantum Dot Molecules
2026 · P. S. Avdienko, L. Hanschke, et al. · PRX Quantum · 1
Unraveling quantum size-dependent optical phenomena in hot carrier quantum well structures
2025 · Nil Selen Aydin, Leopold Rothmayer, et al. · Journal of Applied Physics · 1
Raman spectra of GaSe epitaxial layers grown on GaAs substrates and group-theoretical analysis of their vibrational modes
2019 · V Yu Davydov, Yu E Kitaev, et al. · Journal of Physics Conference Series · 1
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Ultra-high-vacuum cluster tool for epitaxial synthesis and optical spectroscopy of reactive 2D materials
2026 · Dembecki, M., Schabesberger, J., et al. · arXiv (Cornell University)
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MBE-grown virtual substrates for quantum dots emitting in the telecom O- and C-bands
2024 · Scaparra, Bianca, Sirotti, Elise, et al. · arXiv (Cornell University)
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Molecular Beam Epitaxy of Mixed h-GaTe/m-GaTe Thin Films on GaAs(001) Substrates: Structural and Photoluminescence Properties
2022 · S. V. Sorokin, I. V. Sedova, et al. · Journal of Experimental and Theoretical Physics
Исследование встроенных электрических полей на интерфейсе GaSe/GaAs методом спектроскопии фотоотражения
2020 · О.С. Комков, С.А. Хахулин, et al. · Физика и техника полупроводников
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GaAs(001)基板上に分子ビームエピタクシーで成長させた準2D GaTe層の構造的および光学的性質【JST・京大機械翻訳】
2020 · P. S. Avdienko, Dmitry V. Kolyada, et al. · Journal of Physics Conference Series
Молекулярно-пучковая эпитаксия двухмерных слоев GaSe на подложках GaAs(001) и GaAs(112): структурные и оптические свойства
2019 · С.В. Сорокин, П.С. Авдиенко, et al. · Физика и техника полупроводников
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Works count: 23
Citation count: 104
H-index: 6
I10-index: 4
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