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Tamara Saranovac
Observed names:
SARANOVAC, Tamara,
T. Saranovac
Observed institution:
ETH Zurich
ORCID:
0000-0002-1947-7672
Observed ORCID:
0000-0002-1947-7672
OpenAlex ID:
A5071189979
InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz
2022
·
Akshay M. Arabhavi
, Filippo Ciabattini
, et al.
·
IEEE Transactions on Electron Devices
·
52
PDF
InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs
2019
·
Diego C. Ruiz
, Tamara Saranovac
, et al.
·
IEEE Transactions on Electron Devices
·
18
Pt Gate Sink-In Process Details Impact on InP HEMT DC and RF Performance
2017
·
Tamara Saranovac
, Anna Hambitzer
, et al.
·
IEEE Transactions on Semiconductor Manufacturing
·
18
Impact Ionization Control in 50 nm Low-Noise High-Speed InP HEMTs with InAs Channel Insets
2019
·
Diego C. Ruiz
, Tamara Saranovac
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
17
Low-Noise Microwave Performance of 30 nm GaInAs MOS-HEMTs: Comparison to Low-Noise HEMTs
2020
·
Daxin Han
, Diego Calvo Ruiz
, et al.
·
IEEE Electron Device Letters
·
8
Advances in InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs)
2019
·
Colombo R Bolognesi
, Wei Quan
, et al.
·
Japanese Journal of Applied Physics
·
8
Impact of Reduced Gate‐to‐Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance
2020
·
Diego Calvo Ruiz
, Daxin Han
, et al.
·
physica status solidi (a)
·
7
PDF
Effects of Electrochemical Etching on InP HEMT Fabrication
2019
·
Tamara Saranovac
, Diego C. Ruiz
, et al.
·
IEEE Transactions on Semiconductor Manufacturing
·
7
THz InP/GaAsSb DHBTs with Record fAVG =800 GHz: Characterization to 330 GHz
2023
·
A.M. Arabhavi
, M. Deng
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
6
New GaInAs/InAs/InP Composite Channels for mm-Wave Low-Noise InP HEMTs
2019
·
Diego C. Ruiz
, Tamara Saranovac
, et al.
·
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
·
2
Impact of Gate Recess Descum on the DC and RF Characteristics of AlInAs/GaInAs High-Electron Mobility Transistors
2025
·
Fran Kostelac
, Giorgio Bonomo
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Dual Gate HEMT: Compact Cascode for Low-Noise Amplification
2024
·
Giorgio Bonomo
, Filippo Ciabattini
, et al.
·
Global Symposium on Millimeter-Waves
Gate Recess Etch Sensitivity of Thick and Highly-Doped GaInAs Cap Layer in InP HEMT Fabrication
2020
·
Daxin Han
, Diego Calvo Ruiz
, et al.
New GaInAs/InAs/InP Composite Channels for mm-Wave Low-Noise InP HEMTs
2019
·
Cazorla-Amoros Diego
, Tamara Saranovac
, et al.
·
IEEE Conference Proceedings
Unilateral Power Gain Resonances in mm-Wave InP HEMTs
2017
·
Tamara Saranovac
, Ralf Flückiger
, et al.
Comparison of Charge Dissipation Layers and Dose Sensitivity of PMMA Electron Beam Lithography on Transparent Insulating Substrates such as GaN
2017
·
Anna Hambitzer
, Antonis Olziersky
, et al.
Asian Godfathers
2011
·
KATIC, Janko
, SARANOVAC, Tamara
, et al.
·
Infoscience (Ecole Polytechnique Fédérale de Lausanne)
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Works count:
18
Citation count:
143
H-index:
7
I10-index:
4
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