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Martin Trentzsch

Observed names: M Trentzsch, M. Trentzsch, Trentzsch, Martin
OpenAlex ID: A5071223604
A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond
2017 · S. Dunkel, M. Trentzsch, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 558
A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs
2016 · M. Trentzsch, S. Flachowsky, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 423
Ferroelectric ternary content-addressable memory for one-shot learning
2019 · Kai Ni, Xunzhao Yin, et al. · Nature Electronics · 393
Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG
2012 · J. Muller, E. Yurchuk, et al. · Symposium on VLSI Technology · 302
FeFET: A versatile CMOS compatible device with game-changing potential
2020 · Sven Beyer, Stefan Dunkel, et al. · IEEE International Memory Workshop (IMW) · 164
Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories
2014 · Ekaterina Yurchuk, Stefan Mueller, et al. · IEEE International Reliability Physics Symposium proceedings · 119
High endurance strategies for hafnium oxide based ferroelectric field effect transistor
2016 · J. Muller, P. Polakowski, et al. · Non-Volatile Memory Technology Symposium · 103
Design and Analysis of an Ultra-Dense, Low-Leakage, and Fast FeFET-Based Random Access Memory Array
2019 · Dayane Reis, Suman Datta, et al. · IEEE Journal on Exploratory Solid-State Computational Devices and Circuits · 81
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Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs
2020 · Halid Mulaosmanovic, Stefan Dunkel, et al. · IEEE Electron Device Letters · 73
Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction
2020 · Maximilian Lederer, Thomas Kämpfe, et al. · Nanomaterials · 72
Compact FeFET Circuit Building Blocks for Fast and Efficient Nonvolatile Logic-in-Memory
2020 · Evelyn T. Breyer, Halid Mulaosmanovic, et al. · IEEE Journal of the Electron Devices Society · 56
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Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2
2013 · Dominik Martin, Ekaterina Yurchuk, et al. · Solid-State Electronics · 53
Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior
2020 · Halid Mulaosmanovic, Stefan Dunkel, et al. · IEEE Transactions on Electron Devices · 52
Interplay Between Switching and Retention in HfO 2 -Based Ferroelectric FETs
2020 · Halid Mulaosmanovic, Franz Muller, et al. · IEEE Transactions on Electron Devices · 50
HfO2-Based Ferroelectric Field-Effect Transistors with 260 nm Channel Length and Long Data Retention
2012 · E. Yurchuk, J. Muller, et al. · IEEE International Memory Workshop (IMW) · 37
Integration of Hafnium Oxide on Epitaxial SiGe for p-type Ferroelectric FET Application
2020 · Maximilian Lederer, Franz Muller, et al. · IEEE Electron Device Letters · 33
Influence of Frequency Dependent Time to Breakdown on High-K/Metal Gate Reliability
2013 · Steve Knebel, Steve Kupke, et al. · IEEE Transactions on Electron Devices · 32
Defect generation and activation processes in HfO2thin films: Contributions to stress-induced leakage currents
2015 · Rolf Öttking, Steve Kupke, et al. · physica status solidi (a) · 29
Interaction of oxygen vacancies and lanthanum in Hf-based high-kdielectrics: anab initioinvestigation
2011 · Ebrahim Nadimi, Rolf Öttking, et al. · Journal of Physics Condensed Matter · 28
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Application and Benefits of Target Programming Algorithms for Ferroelectric HfO2 Transistors
2020 · H. Zhou, J. Ocker, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 26
Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory
2019 · Evelyn T. Breyer, Halid Mulaosmanovic, et al. · European Solid-State Device Research Conference · 17
Dynamic off-state TDDB of ultra short channel HKMG nFETS and its implications on CMOS logic reliability
2014 · S. Kupke, S. Knebel, et al. · IEEE International Reliability Physics Symposium proceedings · 17
The Degradation Process of High- $k~{\rm SiO}_{2}/{\rm HfO}_{2}$ Gate-Stacks: A Combined Experimental and First Principles Investigation
2014 · Ebrahim Nadimi, Guntrade Roll, et al. · IEEE Transactions on Electron Devices · 17
A cost-efficient 28nm split-gate eFLASH memory featuring a HKMG hybrid bit cell and HV device
2018 · R. Richter, M. Trentzsch, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 15
Tunneling Effective Mass of Electrons in Lightly N-Doped $\hbox{SiO}_{x} \hbox{N}_{y}$ Gate Insulators
2008 · E. Nadimi, C. Golz, et al. · IEEE Transactions on Electron Devices · 14
Works count: 53
Citation count: 2,850
H-index: 20
I10-index: 26
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