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Hajime Fujikura

Observed names: Fujikura Hajime, Fujikura, Hajime, H Fujikura, H. Fujikura, Hajime FUJIKURA, Hajime Fujikura Hajime Fujikura
Observed institutions: Sumitomo Chemical (Japan), Hokkaido University, Kyoto University, Sciocs Company Limited (Japan), Proterial, Ltd. (Japan), Hitachi Cable, Ltd. (Japan), Research Center for Integrated Quantum Electronics, Hokkaido University, Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya University, Hitachi (Japan)
ORCID: 0000-0002-7281-6151
Observed ORCID: 0000-0002-7281-6151
OpenAlex ID: A5071780041
Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates
2017 · Hajime Fujikura, Taichiro Konno, et al. · Japanese Journal of Applied Physics · 93
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Homo-epitaxial growth of n-GaN layers free from carbon-induced mobility collapse and off-angle-dependent doping variation by quartz-free hydride vapor phase epitaxy
2020 · Hajime Fujikura, Taichiro Konno, et al. · Applied Physics Letters · 59
Formation of 〈001〉-aligned nano-scale pores on (001) n-InP surfaces by photoelectrochemical anodization in HCl
1999 · A Hamamatsu, C Kaneshiro, et al. · Journal of Electroanalytical Chemistry · 56
Macrodefect-free, large, and thick GaN bulk crystals for high-quality 2–6 in. GaN substrates by hydride vapor phase epitaxy with hardness control
2018 · Hajime Fujikura, Taichiro Konno, et al. · Japanese Journal of Applied Physics · 51
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Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces and Their Photoluminescence Characterizations
2000 · Hajime Fujikura, Aimin Liu, et al. · Japanese Journal of Applied Physics · 51
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Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy
2019 · Kazutaka Kanegae, Hajime Fujikura, et al. · Applied Physics Letters · 50
Recent progress of high-quality GaN substrates by HVPE method
2017 · Hajime Fujikura, Takehiro Yoshida, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 45
Fabrication of InP-based InGaAs ridge quantum wires utilizing selective molecular beam epitaxial growth on (311)A facets
1996 · H. Fujikura, H. Hasegawa · Journal of Electronic Materials · 45
Molecular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires
1999 · Hideki Hasegawa, Hajime Fujikura, et al. · MRS Bulletin · 36
Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing
2021 · Kazufumi Hirukawa, Kensuke Sumida, et al. · Applied Physics Express · 33
Elimination of macrostep-induced current flow nonuniformity in vertical GaN PN diode using carbon-free drift layer grown by hydride vapor phase epitaxy
2018 · Hajime Fujikura, Kentaro Hayashi, et al. · Applied Physics Express · 33
Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned (001)InP Substrates
1997 · Moriaki Araki, Yuuki Hanada, et al. · Japanese Journal of Applied Physics · 33
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Roughening of GaN homoepitaxial surfaces due to step meandering and bunching instabilities and their suppression in hydride vapor phase epitaxy
2018 · Hajime Fujikura, Taichiro Konno · Applied Physics Letters · 31
Roles of carbon impurities and intrinsic nonradiative recombination centers on the carrier recombination processes of GaN crystals
2019 · Kazunobu Kojima, Fumimasa Horikiri, et al. · Applied Physics Express · 30
Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse
2024 · Shota Kaneki, Taichiro Konno, et al. · Applied Physics Letters · 26
Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates
1997 · Hiroshi Okada Hiroshi Okada, Hajime Fujikura Hajime Fujikura, et al. · Japanese Journal of Applied Physics · 26
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Surface passivation of In0.53Ga0.47As ridge quantum wires using silicon interface control layers
1996 · Hajime Fujikura, Satoshi Kodama, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 23
Reappraisal of Si-Interlayer-Induced Change of Band Discontinuity at GaAs-AlAs Heterointerface Taking Account of Delta-Doping
1992 · Masamichi Akazawa, Hideki Hasegawa, et al. · Japanese Journal of Applied Physics · 22
Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates
1999 · Yoshihiro Satoh, Hiroshi Okada, et al. · Japanese Journal of Applied Physics · 21
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Realization of Low Dislocation GaN/Sapphire Wafers by 3-Step Metalorganic Vapor Phase Epitaxial Growth with Island Induced Dislocation Control
2003 · Hajime Fujikura, Kazuyuki Iizuka, et al. · Japanese Journal of Applied Physics · 20
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Quartz-free hydride vapor phase epitaxy for production of large size GaN-on-GaN epitaxial wafers
2025 · Shota Kaneki, Taichiro Konno, et al. · Applied Physics Express · 19
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Structural and optical properties of epitaxial Sc x Al1− x N coherently grown on GaN bulk substrates by sputtering method
2024 · Takuya Maeda, Yusuke Wakamoto, et al. · Applied Physics Letters · 19
Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substrates
2011 · Hajime Fujikura, Yuichi Oshima, et al. · Journal of Crystal Growth · 18
Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates
2000 · Hajime Fujikura, Tsutomu Muranaka, et al. · Physica E Low-dimensional Systems and Nanostructures · 17
Photoluminescence and Cathodoluminescence Investigation of Optical Properties of InP-Based InGaAs Ridge Quantum Wires Formed by Selective Molecular Beam Epitaxy
1996 · Hajime Fujikura Hajime Fujikura, Hideki Hasegawa Hideki Hasegawa · Japanese Journal of Applied Physics · 17
Works count: 117
Citation count: 1,116
H-index: 20
I10-index: 35
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