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Shigekazu Tomai
Observed names:
S. Tomai,
Shigekazu TOMAI
Institution:
Idemitsu Kosan (Japan)
Observed institutions:
Kyushu University,
Idemitsu Kosan (Japan),
Nara Institute of Science and Technology,
National Institute of Information and Communications Technology
ORCID:
0000-0002-5401-6396
Observed ORCID:
0000-0002-5401-6396
OpenAlex ID:
A5071797039
High-Performance Thin Film Transistor with Amorphous In2O3–SnO2–ZnO Channel Layer
2012
·
Shigekazu Tomai
, Mami Nishimura
, et al.
·
Japanese Journal of Applied Physics
·
113
High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering
2012
·
Kazuaki Ebata
, Shigekazu Tomai
, et al.
·
Applied Physics Express
·
103
PDF
Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect
2013
·
Satoshi Urakawa
, Shigekazu Tomai
, et al.
·
Applied Physics Letters
·
98
PDF
Structural study of amorphous In2O3 film by grazing incidence X-ray scattering (GIXS) with synchrotron radiation
2005
·
Futoshi Utsuno
, Hiroyuki Inoue
, et al.
·
Thin Solid Films
·
43
A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes
2023
·
Kengo Nagata
, Taichi Matsubara
, et al.
·
Crystals
·
17
PDF
Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses
2020
·
Dapeng Wang
, Mamoru Furuta
, et al.
·
Nanomaterials
·
17
PDF
Nano-crystallization in ZnO-doped In2O3 thin films via excimer laser annealing for thin-film transistors
2016
·
Mami N. Fujii
, Yasuaki Ishikawa
, et al.
·
AIP Advances
·
15
Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED
2022
·
Taichi Matsubara
, Kengo Nagata
, et al.
·
Applied Physics Express
·
14
PDF
Metal-insulator transitions in IZO, IGZO, and ITZO films
2014
·
Kazumasa Makise
, Kazuya Hidaka
, et al.
·
Journal of Applied Physics
·
14
Thermal distribution in amorphous InSnZnO thin‐film transistor
2013
·
Satoshi Urakawa
, Shigekazu Tomai
, et al.
·
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
·
11
Crossover from weak localization to anti-weak localization in indium oxide systems with wide range of resistivity
2013
·
B. Shinozaki
, K. Hidaka
, et al.
·
Journal of Applied Physics
·
11
Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors
2020
·
Dapeng Wang
, Mamoru Furuta
, et al.
·
Nanomaterials
·
10
PDF
The electrical conduction properties of poly-crystalline indium-zinc-oxide film
2014
·
S. Tomai
, K. Terai
, et al.
·
Journal of Applied Physics
·
10
P‐5: Pseudo‐CMOS Circuits using Amorphous In‐Sn‐Zn‐O Thin‐Film Transistors
2014
·
Mutsumi Kimura
, Daisuke Sawamoto
, et al.
·
SID Symposium Digest of Technical Papers
·
9
Influence of active layer thickness on performance and reliability of InSnZnO thin-film transistors
2012
·
Dapeng Wang
, Chaoyang Li
, et al.
·
International Workshop on Active-Matrix Flatpanel Displays and Devices
·
9
Self-heating induced instability of oxide thin film transistors under dynamic stress
2016
·
Kahori Kise
, Mami N. Fujii
, et al.
·
Applied Physics Letters
·
8
ALD Polycrystalline Ga-Doped In 2 O 3 (Poly-IGO) Nanosheet Exceeding Intrinsic Mobility of 120 cm 2 /Vs for Process-Friendly BEOL-Compatible FET Application
2025
·
Takanori Takahashi
, Takuya Hoshii
, et al.
·
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
·
7
Effect of Annealing on the Electrical and Optical Properties of MgZnO Films Deposited by Radio Frequency Magnetron Sputtering
2020
·
Maki Kushimoto
, Tadayoshi Sakai
, et al.
·
physica status solidi (a)
·
7
The Deterioration Phenomenon of Amorphous InSnZnO Transistors Derived from the Process of Annealing
2013
·
S. Tomai
, H. Hayasaka
, et al.
·
ECS Solid State Letters
·
7
PDF
High-Performance Thin Film Transistor with Amorphous In₂O₃–SnO₂–ZnO Channel Layer (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
2012
·
Shigekazu Tomai
, Mami Nishimura
, et al.
·
Japanese Journal of Applied Physics
·
6
(Invited) Negative-Bias with Illumination Stress Induced State Creation in Amorphous InGaZnO Thin-Film Transistor
2013
·
Mamoru Furuta
, Mai Phi Hung
, et al.
·
ECS Transactions
·
5
PDF
Electron weak localization and electron–electron interaction effects on magneto-conductivity in In–Ga–Zn oxide films
2013
·
Bunju Shinozaki
, Kazuya Hidaka
, et al.
·
Thin Solid Films
·
4
Polycrystalline In-Ga-O semiconductor for high-performance thin-film transistor
2012
·
K. Ebata
, Shigekazu Tomai
, et al.
·
International Workshop on Active-Matrix Flatpanel Displays and Devices
·
3
Annealing effect on the superconductivity of In2O3–ZnO thin films
2009
·
B. Shinozaki
, N. Kokubo
, et al.
·
Physica C Superconductivity
·
2
P.8: Trap States in Amorphous In‐Sn‐Zn‐O Thin‐Film Transistors Analyzed Using Dependence on Channel Thickness
2013
·
Tokiyoshi Matsuda
, Mutsumi Kimura
, et al.
·
SID Symposium Digest of Technical Papers
·
1
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Works count:
35
Citation count:
544
H-index:
11
I10-index:
13
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