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J. Doerschel

Observed names: Doerschel, J., Doerschel, Jürgen, J Doerschel
OpenAlex ID: A5073439293
Influence of nitrogen doping on the properties of 4H–SiC single crystals grown by physical vapor transport
2003 · H.-J. Rost, J. Doerschel, et al. · Journal of Crystal Growth · 52
Growth conditions and composition of terbium aluminum garnet single crystals grown by the micro pulling down technique
2001 · S. Ganschow, D. Klimm, et al. · Journal of Crystal Growth · 31
Polytype stability in nitrogen-doped PVT—grown 2″—4H–SiC crystals
2004 · H.-J. Rost, J. Doerschel, et al. · Journal of Crystal Growth · 27
Phase separation during the melting of oxide borates LnCa4O(BO3)3 (Ln=Y, Gd)
2002 · D Klimm, S Ganschow, et al. · Materials Research Bulletin · 20
Crystal structure of strontium lanthanum trigallium heptoxide, (Sr0.5La0.5)2Ga3O7
1997 · M. Steins, W. Schmitz, et al. · Zeitschrift für Kristallographie - New Crystal Structures · 20
The problem of twinning in NdGaO3 Czochralski crystals
1994 · R. Uecker, P. Reiche, et al. · Journal of Crystal Growth · 19
Characterization of extended defects in highly Te-doped 〈111〉 GaSb single crystals grown by the Czochralski technique
1992 · J. Doerschel, U. Geissler · Journal of Crystal Growth · 18
Growth related distribution of secondary phase inclusions in 6H–SiC single crystals
2001 · H.-J. Rost, J. Dolle, et al. · Journal of Crystal Growth · 17
Evolution of domain walls in 6H- and 4H-SiC single crystals
2002 · D. Siche, H.-J. Rost, et al. · Journal of Crystal Growth · 16
Plastische Verformung von Siliziumeinkristallen unterschiedlicher Ausgangsversetzungsdichte im Streckgrenzenbereich
1977 · J. Doerschel, F.‐G. Kirscht, et al. · Kristall und Technik · 15
Differences in plastic deformation behaviour of CZ- and FZ-grown silicon crystals
1981 · J. Doerschel, F.-G. Kirscht · physica status solidi (a) · 13
Surface preparation of 4H–SiC substrates for hot-wall CVD of SiC layers
2001 · G. Wagner, J. Doerschel, et al. · Applied Surface Science · 12
Stacking faults in heavily nitrogen doped 4H-SiC
2004 · K. Irmscher, J. Doerschel, et al. · The European Physical Journal Applied Physics · 10
Structural and electrical properties of unintentionally doped 4H-SiC epitaxial layers—Grown by hot-wall CVD
2001 · G. Wagner, B. Thomas, et al. · Journal of Electronic Materials · 9
Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC
2005 · D. Siche, M. Albrecht, et al. · Materials science forum · 8
Cathodoluminescence study of the activator distribution in SrS:Cu,Ag thin luminescent films
2004 · D. Poelman, J. Doerschel, et al. · Spectrochimica Acta Part B Atomic Spectroscopy · 7
Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes
2002 · H. J. Rost, J. Doerschel, et al. · Materials science forum · 7
Crystal structure of aluminium lanthanum strontium tantalum oxide, (La0.272Sr0.728)(Al0.648Ta0.352)O3
1997 · M. Steins, J. Doerschel, et al. · Zeitschrift für Kristallographie - New Crystal Structures · 7
Crystal structure of strontium lanthanum trigallium heptoxide, (Sr0.5La0.5)2Ga3O7
1997 · M. Steins, W. Schmitz, et al. · Zeitschrift für Kristallographie - New Crystal Structures · 7
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Zur plastischen Verformung von Antimoneinkristallen im Druckversuch bei Raumtemperatur
1975 · J. Doerschel · Kristall und Technik · 7
Sublimation growth of 3C–SiC on 6H–SiC seeds
2004 · A. Freudenberg, J. Wollweber, et al. · Journal of Crystal Growth · 6
Growth and spectroscopic properties of Yb,Tm:YSGG crystalline fibers
2002 · F. Cornacchia, E. Favilla, et al. · Applied Physics B · 6
Transmission electron microscopy investigation of extended defects in heavily Se-doped bulk GaSb
1994 · J. Doerschel · Materials Science and Engineering B · 6
Untersuchungen über Kristalle der Zusammensetzung ZrO2 · 2 MoO3
1966 · W. Kleber, J. Doerschel · Zeitschrift für anorganische und allgemeine Chemie · 5
Ein Beitrag zum Wachstum von Zirkoniumdioxid‐Einkristallen aus Schmelzlösungen
1966 · W. Kleber, L. Ickert, et al. · Kristall und Technik · 5
Works count: 60
Citation count: 396
H-index: 12
I10-index: 13
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