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Gudrun Helga Kissinger

Observed names: G Kissinger, G. KISSINGER, G. Kissinger, G. Z. Kissinger, Gudrun Kissinger, Kissinger, G., Kissinger, Gudrun
ORCID: 0000-0002-6492-3117
Observed ORCID: 0000-0002-6492-3117
OpenAlex ID: A5070829190
Void-free silicon-wafer-bond strengthening in the 200–400 °C range
1993 · Gudrun Kissinger, Wolfgang Kissinger · Sensors and Actuators A Physical · 74
Hydrophilicity of Silicon Wafers for Direct Bonding
1991 · G. Kissinger, W. Kissinger · physica status solidi (a) · 63
Silicon, Germanium, and Their Alloys
2014 · Gudrun Kissinger, Sergio Pizzini · CRC Press eBooks · 55
Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers
2007 · G. Kissinger, J. Dabrowski, et al. · Journal of The Electrochemical Society · 49
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Supercell-size convergence of formation energies and gap levels of vacancy complexes in crystalline silicon in density functional theory calculations
2015 · J. Dabrowski, G. Kissinger · Physical Review B · 27
Investigation of the Copper Gettering Mechanism of Oxide Precipitates in Silicon
2015 · G. Kissinger, D. Kot, et al. · ECS Journal of Solid State Science and Technology · 26
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Stepwise equilibrated graded GexSi1−x buffer with very low threading dislocation density on Si(001)
1995 · G. Kissinger, T. Morgenstern, et al. · Applied Physics Letters · 25
Interaction of oxygen with thermally induced vacancies in Czochralski silicon
2009 · V. Akhmetov, G. Kissinger, et al. · Applied Physics Letters · 24
Key influence of the thermal history on process-induced defects in Czochralski silicon wafers
1997 · G Kissinger, D Gräf, et al. · Semiconductor Science and Technology · 19
Investigation of the Composition of the Si/SiO2Interface in Oxide Precipitates and Oxide Layers on Silicon by STEM/EELS
2017 · G. Kissinger, M. A. Schubert, et al. · ECS Journal of Solid State Science and Technology · 18
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Morphology of Oxygen Precipitates in RTA Pre-Treated Czochralski Silicon Wafers Investigated by FTIR Spectroscopy and STEM
2014 · D. Kot, G. Kissinger, et al. · ECS Journal of Solid State Science and Technology · 18
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Analysis of the Nucleation Kinetics of Oxide Precipitates in Czochralski Silicon
2008 · Gudrun Kissinger, Dawid Kot, et al. · ECS Transactions · 18
Characterization of Deep Levels Introduced by RTA and by Subsequent Anneals in n-Type Silicon
2012 · D. Kot, T. Mchedlidze, et al. · ECS Journal of Solid State Science and Technology · 17
Load induced stresses and plastic deformation in 450mm silicon wafers
2007 · A. Fischer, G. Kissinger · Applied Physics Letters · 17
Measurement, modelling and simulation of defects in as-grown Czochralski silicon
1997 · J. Vanhellemont, S. Senkader, et al. · Journal of Crystal Growth · 17
A Method for Studying the Grown‐In Defect Density Spectra in Czochralski Silicon Wafers
1997 · G. Kissinger, D. Gräf, et al. · Journal of The Electrochemical Society · 17
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Influence of Residual Point Defect Supersaturation on the Formation of Grown‐In Oxide Precipitate Nuclei in CZ‐Si
1998 · G. Kissinger, J. Vanhellemont, et al. · Journal of The Electrochemical Society · 16
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Denuded zone formation by conventional and rapid thermal anneals
2000 · G Kissinger, J Vanhellemont, et al. · Materials Science and Engineering B · 14
Assessment of Silicon Wafer Material for the Fabrication of Integrated Circuit Sensors
2000 · T. Müller, G. Kissinger, et al. · Journal of The Electrochemical Society · 14
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Observation of stacking faults and prismatic punching systems in silicon by light scattering tomography
1996 · G. Kissinger, J. Vanhellemont, et al. · Journal of Crystal Growth · 14
Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers
2017 · D. Kot, G. Kissinger, et al. · ECS Journal of Solid State Science and Technology · 13
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Ab initio calculations and rate equation simulations for vacancy and vacancy-oxygen clustering in silicon
2016 · G. Kissinger, J. Dabrowski, et al. · Journal of Crystal Growth · 13
Oxygen Precipitation in Silicon
2015 · Gudrun Kissinger · Lecture notes in physics · 13
Composition of oxygen precipitates in Czochralski silicon wafers investigated by STEM with EDX/EELS and FTIR spectroscopy
2015 · Dawid Kot, Gudrun Kissinger, et al. · physica status solidi (RRL) - Rapid Research Letters · 12
Modeling the Early Stages of Oxygen Agglomeration
2011 · G. Kissinger, J. Dabrowski, et al. · Journal of The Electrochemical Society · 12
Works count: 190
Citation count: 1,053
H-index: 16
I10-index: 36
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