Get started
Author

G. V. Voznyuk

Observed names: G V Voznyuk, G.V. Voznyuk, Gleb V. Voznyuk, Gleb Voznyuk, Voznyuk G. V., Voznyuk, Gleb, Voznyuk, Gleb V.
Observed institutions: ITMO University, Ioffe Institute
ORCID: 0009-0004-0718-1649
Observed ORCID: 0009-0004-0718-1649
OpenAlex ID: A5074263020
Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy
2018 · Galia Pozina, Azat R. Gubaydullin, et al. · Scientific Reports · 13
PDF
Quantum-Cascade Lasers with a Distributed Bragg Reflector Formed by Ion-Beam Etching
2020 · A. V. Babichev, D. A. Pashnev, et al. · Technical Physics Letters · 10
Optical Cavity Based on GaN Planar Nanowires Grown by Selective Area Metal‐Organic Vapor Phase Epitaxy
2019 · Galia Pozina, Konstantin A. Ivanov, et al. · physica status solidi (b) · 9
Surface Emitting Quantum-Cascade Ring Laser
2021 · A. V. Babichev, E. S. Kolodeznyi, et al. · Semiconductors · 7
Single-mode lasing in ring-cavity surface-emitting lasers
2023 · Andrey Babichev, Evgenii Kolodeznyi, et al. · Journal of Optical Technology · 6
Calculation of the Ga+ FIB Ion Dose Distribution by SEM Image
2020 · M. I. Mitrofanov, G. V. Voznyuk, et al. · Semiconductors · 6
Photoluminescence Study of AlGaAs/GaAs after Focused Ion Beam Milling
2020 · G. V. Voznyuk, I. N. Grigorenko, et al. · Semiconductors · 5
Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers
2022 · Payusov A. S., Mitrofanov M. I., et al. · Письма в журнал технической физики · 3
PDF
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
2019 · Ya. V. Levitskii, M. I. Mitrofanov, et al. · Semiconductors · 3
FIB Lithography Challenges of Si3N4/GaN Mask Preparation for Selective Epitaxy
2018 · M. I. Mitrofanov, I. V. Levitskii, et al. · Semiconductors · 3
Focused Ion Beam Milling of Ridge Waveguides of Edge-Emitting Semiconductor Lasers
2023 · A. S. Payusov, M. I. Mitrofanov, et al. · Technical Physics Letters · 2
Study of the Spatial Characteristics of Emission of Surface-Emitting Ring Quantum-Cascade Lasers
2023 · A. V. Babichev, D. A. Mikhailov, et al. · Semiconductors · 2
Surface Emitting Quantum-Cascade Lasers with a Second-Order Grating and Elevated Coefficient of Coupling
2023 · A. V. Babichev, E. S. Kolodeznyi, et al. · Bulletin of the Russian Academy of Sciences Physics · 2
PDF
Quantum-Cascade Ring Resonator Laser with 7–8 μm Wavelength and Surface Radiation Output
2020 · A. V. Babichev, E. S. Kolodeznyi, et al. · Semiconductors · 2
Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam
2019 · A. V. Sakharov, S. O. Usov, et al. · Semiconductors · 2
Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure
2018 · I. V. Levitskii, M. I. Mitrofanov, et al. · Semiconductors · 2
Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching
2018 · M. I. Mitrofanov, I. V. Levitskii, et al. · Semiconductors · 2
Subwave Textured Surfaces for the Radiation Coupling from the Waveguide
2023 · G. V. Voznyuk, I. N. Grigorenko, et al. · Technical Physics Letters · 1
Surface-Emitting Quantum-Cascade Lasers with a Grating Formed by Focused Ion Beam Milling
2023 · A. V. Babichev, D. A. Mikhailov, et al. · Semiconductors · 1
Surface emitting quantum-cascade lasers with a second-order grating and increased coupling coefficient
2023 · A. V. Babichev, E. S. Kolodeznyi, et al. · Известия Российской академии наук Серия физическая · 1
PDF
Enhancement of the Basal-Plane Stacking Fault Emission in a GaN Planar Nanowire Microcavity
2022 · E. I. Girshova, G. Pozina, et al. · Journal of Experimental and Theoretical Physics Letters · 1
Quantum-Cascade Laser with Radiation Emission through a Textured Layer
2022 · A. V. Babichev, E. S. Kolodeznyi, et al. · Semiconductors · 1
Surface-emitting quantum-cascade lasers with a grating formed by focused ion beam milling
2022 · Babichev A. V., Mikhailov D. A., et al. · Физика и техника полупроводников · 1
On the effect of etching with a focused Ga-=SUP=-+-=/SUP=- ion beam in the energy range 12-30 keV on the luminescent properties of the Al-=SUB=-0.18-=/SUB=-Ga-=SUB=-0.82-=/SUB=-As/GaAs/Al-=SUB=-0.18-=/SUB=-Ga-=SUB=-0.82-=/SUB=-As heterostructure
2022 · Voznyuk G. V., Grigorenko I. N., et al. · Физика и техника полупроводников · 1
PDF
Lateral Mode Tuning in Coupled Ridge Waveguides Using Focused Ion Beam
2020 · A. S. Payusov, A. A. Serin, et al. · Semiconductors · 1
Works count: 42
Citation count: 88
H-index: 6
I10-index: 2
Year
Topic
Type