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Masayoshi Kosaki

Observed names: M Kosaki, M. Kosaki, Masayoshi Kosaki Masayoshi Kosaki
ORCID: 0000-0002-8975-8859
Observed ORCID: 0000-0002-8975-8859
OpenAlex ID: A5074265857
Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate
2004 · Y. Okamoto, Y. Ando, et al. · IEEE Transactions on Microwave Theory and Techniques · 117
High-Power Recessed-Gate AlGaN–GaN HFET With a Field-Modulating Plate
2004 · Y. Okamoto, Y. Ando, et al. · IEEE Transactions on Electron Devices · 64
Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
2001 · Shigeo Yamaguchi, Masayoshi Kosaki, et al. · Applied Physics Letters · 48
Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress
2022 · Tetsuo Narita, Masakazu Kanechika, et al. · Scientific Reports · 47
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Polarization Engineering on Buffer Layer in GaN-Based Heterojunction FETs
2008 · Takashi Inoue, Tatsuo Nakayama, et al. · IEEE Transactions on Electron Devices · 37
Control of strain in GaN using an In doping-induced hardening effect
2001 · Shigeo Yamaguchi, Michihiko Kariya, et al. · Physical review. B, Condensed matter · 31
Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress
2021 · Tetsuo Narita, Yoshitaka Nagasato, et al. · Applied Physics Letters · 21
Control of strain in GaN by a combination of H2 and N2 carrier gases
2001 · Shigeo Yamaguchi, Michihiko Kariya, et al. · Journal of Applied Physics · 21
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
2002 · Shigeo Yamaguchi, Yasuo Iwamura, et al. · Applied Physics Letters · 18
179 W recessed-gate AlGaN/GaN heterojunction FET with field-modulating plate
2004 · Y. Okamoto, Y. Ando, et al. · Electronics Letters · 16
A 149W recessed-gate AlGaN/GaN FP-FET
2004 · Y. Okamoto, Y. Ando, et al. · IEEE MTT-S International Microwave Symposium digest · 14
Crystal Growth of High-Quality AlInN/GaN Superlattices and of Crack-Free AlN on GaN: Their Possibility of High Electron Mobility Transistor
2001 · S. Yamaguchi, M. Kosaki, et al. · physica status solidi (a) · 13
Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
2000 · Michihiko Kariya Michihiko Kariya, Shugo Nitta Shugo Nitta, et al. · Japanese Journal of Applied Physics · 10
In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology
2002 · Shugo Nitta, Yohei Yukawa, et al. · Materials Science and Engineering B · 8
Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN
2001 · Masayoshi Kosaki, Shingo Mochizuki, et al. · Japanese Journal of Applied Physics · 8
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Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions
2023 · Tetsuo Narita, Masakazu Kanechika, et al. · Applied Physics Letters · 7
Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy
2002 · S. Yamaguchi, Y. Iwamura, et al. · Journal of Crystal Growth · 5
Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas
2000 · S Yamaguchi, M Kariya, et al. · Journal of Crystal Growth · 5
Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)
2023 · Tetsuo Narita, Daigo Kikuta, et al. · IEEE International Reliability Physics Symposium proceedings · 4
Evaluation of AlGaN/GaN‐HFET with HfAlO gate insulator
2007 · H. Sazawa, K. Hirata, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4
Correlation between micropipes on SiC substrate and dc characteristics of AlGaN∕GaN high-electron mobility transistors
2006 · Hyungjin Bang, Takeshi Mitani, et al. · Journal of Applied Physics · 4
Effect of In-Doping on the Properties of as-Grown p-Type GaN Grown by Metalorganic Vapour Phase Epitaxy
2002 · S. Yamaguchi, Y. Iwamura, et al. · physica status solidi (a) · 3
Influence of macro defects in SiC substrate on AlGaN/GaN HEMT DC characteristics
2006 · H. Sazawa, T. Mitani, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2
Influence of Micropipe and Domain Boundary in SiC Substrate on the DC Characteristics of AlGaN/GaN HFET
2007 · Hiroyuki Sazawa, Tomohisa Kato, et al. · Materials science forum · 1
High power AlGaN/GaN heterojunction FETs for base station applications
2004 · Y. Ando, Y. Okamoto, et al. · Conference digest · 1
Works count: 34
Citation count: 510
H-index: 12
I10-index: 13
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