Author

Masataka Kase

Observed names: M. KASE, M. Kase, Masatak Kase

Observed institutions: Fujitsu (Japan), University of Surrey, Fujitsu Semiconductor (Japan)

OpenAlex ID: A5074923815

A novel strain enhanced CMOS architecture using selectively deposited high tensile and high compressive silicon nitride films

2005 · S. Pidin, T. Mori, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 107

Photoresist Removal Using Atomic Hydrogen Generated by Hot-Wire Catalyzer and Effects on Si-Wafer Surface

2009 · Masashi Yamamoto, Hideo Horibe, et al. · Japanese Journal of Applied Physics · 40

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MOSFET current drive optimization using silicon nitride capping layer for 65-nm technology node

2004 · S. Pidin, T. Mori, et al. · Symposium on VLSI Technology · 38

Eliminating channeling tail by lower dose preimplantation

1990 · Masataka Kase, Mami Kimura, et al. · Applied Physics Letters · 28

Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride films

2005 · S. Shinagawa, H. Nohira, et al. · Microelectronic Engineering · 26

High performance 25 nm gate CMOSFETs for 65 nm node high speed MPUs

2004 · K. Goto, Y. Tagawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 22

Junction Profile Engineering with a Novel Multiple Laser Spike Annealing Scheme for 45-nm Node High Performance and Low Leakage CMOS Technology

2007 · T. Yamamoto, T. Kubo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 21

PULSION® HP: Tunable, High Productivity Plasma Doping

2011 · S. B. Felch, F. Torregrosa, et al. · AIP conference proceedings · 16

First Quantitative Observation of Local Temperature Fluctuation in Millisecond Annealing

2007 · T. Kubo, T. Sukegawa, et al. · International Conference on Advanced Thermal Processing of Semiconductors · 14

A study of ultra shallow junction and tilted channel implantation for high performance 0.1 μm pMOSFETs

2002 · K. Goto, M. Kase, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 14

Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

2011 · Katsuhiro Tsukamoto, Takashi Kuroi, et al. · AIP conference proceedings · 13

Angle-resolved photoelectron spectroscopy on gate insulators

2006 · T. Hattori, H. Nohira, et al. · Microelectronics Reliability · 13

High Speed Si Etching with ClF[sub 3] Cluster Injection

2011 · T. Seki, Y. Yoshino, et al. · AIP conference proceedings · 10

Energy effects on the sputtering yield of Si bombarded with gas cluster ion beams

2011 · K. Ichiki, S. Ninomiya, et al. · AIP conference proceedings · 10

Advantages of a New Scheme of Junction Profile Engineering with Laser Spike Annealing and Its Integration into a 45-nm Node High Performance CMOS Technology

2007 · T. Yamamoto, T. Kubo, et al. · Symposium on VLSI Technology · 10

Drive Current Enhancement in Sub-50 nm CMOS by Reduction of SDE Resistance with Laser Thermal Process

2004 · Tomonari Yamamoto, Ken-ichi Goto, et al. · Journal of The Electrochemical Society · 10

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B diffusion in Si predamaged with Si+ near the threshold dose of amorphization

1991 · Masataka Kase, Yoshio Kikuchi, et al. · Applied Physics Letters · 10

Benefits of Damage Engineering for PMOS Junction Stability

2011 · Fareen Khaja, Benjamin Colombeau, et al. · AIP conference proceedings · 9

Synthesis of Endohedral Fullerene Using ECR Ion Source

2011 · Hidekazu Minezaki, Takashi Uchida, et al. · AIP conference proceedings · 9

FinFET Doping; Material Science, Metrology, and Process Modeling Studies for Optimized Device Performance

2011 · R. Duffy, M. Shayesteh, et al. · AIP conference proceedings · 9

Properties of Diboron Tetrafluoride (B[sub 2]F[sub 4]), a New Gas for Boron Ion Implantation

2011 · Oleg Byl, Edward Jones, et al. · AIP conference proceedings · 8

Simultaneous Sterilization With Surface Modification Of Plastic Bottle By Plasma-Based Ion Implantation

2011 · N. Sakudo, N. Ikenaga, et al. · AIP conference proceedings · 8

Multi-Wavelength Raman and Photoluminescence Characterization of Implanted Silicon Before and After Rapid Thermal Annealing

2011 · Woo Sik Yoo, Takeshi Ueda, et al. · AIP conference proceedings · 8

Ti-capping technique as a breakthrough for achieving low threshold voltage, high mobility, and high reliability of pMOSFET with metal gate and high-k dielectrics technologies

2009 · Haruhiko Takahashi, Hiroshi Minakata, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8

Contamination Control in Ion Implantation

2011 · R. Eddy, D. Doi, et al. · AIP conference proceedings · 7

Works count: 187

Citation count: 785

H-index: 12

I10-index: 17