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Z. Ouennoughi

Observed names: Ouennoughi, Zahir, Z Ouennoughi, Z. OUENNOUGHI, Zahir OUENNOUGHI, Zahir Ouennoughi
Observed institutions: Centre National de la Recherche Scientifique, Aix-Marseille Université, University Ferhat Abbas of Setif, Centre Interdisciplinaire de Nanoscience de Marseille, Université Henri Poincaré, Sultan Qaboos University, Université de Lorraine
ORCID: 0000-0002-6968-6683
Observed ORCID: 0000-0002-6968-6683
OpenAlex ID: A5075263288
A new method for evaluating illuminated solar cell parameters
2001 · M Chegaar, Z Ouennoughi, et al. · Solid-State Electronics · 168
A simpler method for extracting solar cell parameters using the conductance method
1999 · Z Ouennoughi, M Chegaar · Solid-State Electronics · 96
Extracting dc parameters of solar cells under illumination
2004 · M. Chegaar, Z. Ouennoughi, et al. · Vacuum · 94
Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC
2008 · A Ferhat Hamida, Z Ouennoughi, et al. · Semiconductor Science and Technology · 75
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Gaussian distribution of inhomogeneous barrier height in tungsten/4H-SiC (000-1) Schottky diodes
2008 · S. Toumi, A. Ferhat-Hamida, et al. · Microelectronic Engineering · 53
Study of barrier inhomogeneities using I–V–T characteristics of Mo/4H–SiC Schottky diode
2014 · Z. Ouennoughi, S. Toumi, et al. · Physica B Condensed Matter · 45
Extraction of Schottky diode parameters including parallel conductance using a vertical optimization method
2002 · A. Ferhat-Hamida, Z. Ouennoughi, et al. · Solid-State Electronics · 43
Investigation of barrier inhomogeneities in Mo/4H–SiC Schottky diodes
2010 · L. Boussouar, Z. Ouennoughi, et al. · Microelectronic Engineering · 41
On the Minimum in the Forward Capacitance in MIS Tunnel Diodes
1997 · Z. Ouennoughi · physica status solidi (a) · 34
Electrical characteristics of Mo/4H-SiC Schottky diodes having ion-implanted guard rings: temperature and implant-dose dependence
2011 · A Latreche, Z Ouennoughi, et al. · Semiconductor Science and Technology · 24
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Analysis of frequency- and temperature-dependent interface states in PtSi/p-Si Schottky diodes
2008 · A. Sellai, Z. Ouennoughi · Materials Science and Engineering B · 23
Extraction of Illuminated Solar Cell and Schottky Diode Parameters Using a Genetic Algorithm
2005 · A. SELLAI, Z. OUENNOUGHI · International Journal of Modern Physics C · 22
Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC
2013 · Z. Ouennoughi, C. Strenger, et al. · Microelectronics Reliability · 19
Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method
2016 · S. Toumi, Z. Ouennoughi, et al. · Solid-State Electronics · 16
Modified Airy function method modelling of tunnelling current for Schottky barrier diodes on silicon carbide
2013 · A Latreche, Z Ouennoughi · Semiconductor Science and Technology · 16
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Temperature dependence of the inhomogeneous parameters of the Mo/4H–SiC Schottky barrier diodes
2016 · A Latreche, Z Ouennoughi, et al. · Semiconductor Science and Technology · 14
Analysis of InP Schottky/tunnel metal-insulator-semiconductor diode characteristics with a conductance technique
1994 · Z Ouennoughi, K Boulkroun, et al. · Journal of Physics D Applied Physics · 14
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On the difference in the apparent barrier height of inhomogeneous Schottky diodes with a Gaussian distribution
2007 · N Rouag, L Boussouar, et al. · Semiconductor Science and Technology · 12
Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode
2021 · S. Toumi, Z. Ouennoughi, et al. · Applied Physics A · 10
Growth and characteristics of ZnO nano-aggregates electrodeposited onto p-Si(111)
2010 · Z. Messaï, Z. Ouennoughi, et al. · Applied Surface Science · 9
MIS tunnel admittance with an inhomogeneous dielectric
1997 · Z. OUENNOUGHI, A. SELLAI · International Journal of Electronics · 9
An inversion method for the complete characterization of transparent film-absorbing substrate systems using multiple angle ellipsometry
1992 · T. Easwarakhanthan, Z. Ouennoughi, et al. · Solid-State Electronics · 7
Characterization of double-layer transparent films on absorbing substrates using multiple-angle ellipsometry
1991 · T. Easwarakhanthan, Z. Ouennoughi, et al. · Applied Surface Science · 7
A vertical optimization method for a simultaneous extraction of the five parameters characterizing the barrier height in the Mo/4H–SiC Schottky contact
2019 · S. Toumi, Z. Ouennoughi · Indian Journal of Physics · 5
Extracting of silicon carbide schottky diode model parameters using lateral optimization method including the parallel conductance
2005 · Z. Ouennoughi, R. Weiss, et al. · 5
Works count: 42
Citation count: 883
H-index: 15
I10-index: 19
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