Author

Thomas Auzelle

Observed names: AUZELLE, T, Auzelle, T., Auzelle, Thomas, T Auzelle, T. Auzelle

Institutions: Paul Drude Institute for Solid State Electronics, Forschungsverbund Berlin

Observed institutions: Université Paris-Sud, Centre National de la Recherche Scientifique, Universitat de València, Université Joseph Fourier, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire de physique des Solides, CEA Grenoble, Institut de Recherche Interdisciplinaire de Grenoble, Laboratoire des Matériaux et du Génie Physique, Paul Drude Institute for Solid State Electronics, Institut Nanosciences et Cryogénie, Institut Néel, Forschungsverbund Berlin, PHotonique ELectronique et Ingénierie QuantiqueS, Communauté Université Grenoble Alpes, Université Grenoble Alpes

ORCID: 0000-0002-2729-7970

Observed ORCID: 0000-0002-2729-7970

OpenAlex ID: A5076444616

The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires

2015 · Thomas Auzelle, Benedikt Haas, et al. · Journal of Applied Physics · 71

Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries

2015 · Thomas Auzelle, Benedikt Haas, et al. · Applied Physics Letters · 67

Assessment of Polarity in GaN Self-Assembled Nanowires by Electrical Force Microscopy

2015 · A. Minj, A. Cros, et al. · Nano Letters · 56

Lifetime Measurements Well below the Optical Diffraction Limit

2016 · Sophie Meuret, Luiz H. G. Tizei, et al. · ACS Photonics · 52

InGaN nanowires with high InN molar fraction: growth, structural and optical properties

2016 · Xin Zhang, Hugo Lourenço-Martins, et al. · Nanotechnology · 47

Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

2014 · Gilles Nogues, Thomas Auzelle, et al. · Applied Physics Letters · 36

Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation

2019 · Sergio Fernández-Garrido, Thomas Auzelle, et al. · Nanoscale Advances · 31

Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy

2016 · Albert Minj, Ana Cros, et al. · Nanotechnology · 30

Detaching (In,Ga)N Nanowire Films for Devices Requiring High Flexibility and Transmittance

2020 · Yukun Zhao, Zhiwei Xing, et al. · ACS Applied Nano Materials · 24

A polarity-driven nanometric luminescence asymmetry in AlN/GaN heterostructures

2014 · L. H. G. Tizei, S. Meuret, et al. · Applied Physics Letters · 20

Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductor Nanowires

2020 · L. Jaloustre, S. Le Denmat, et al. · ACS Applied Nano Materials · 18

Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires

2015 · J. Rodrigues, M. F. Leitão, et al. · The Journal of Physical Chemistry C · 15

Incorporation of Europium into GaN Nanowires by Ion Implantation

2019 · D. Nd. Faye, X. Biquard, et al. · The Journal of Physical Chemistry C · 14

Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3

2019 · G Calabrese, G Gao, et al. · Nanotechnology · 14

A route for the top-down fabrication of ordered ultrathin GaN nanowires

2023 · M Oliva, V Kaganer, et al. · Nanotechnology · 13

ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal–Semiconductor Heterostructures

2024 · Philipp John, Achim Trampert, et al. · Nano Letters · 12

Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry

2018 · Pierre Corfdir, Gabriele Calabrese, et al. · CrystEngComm · 12

Unraveling the strain state of GaN down to single nanowires

2016 · Thomas Auzelle, Xavier Biquard, et al. · Journal of Applied Physics · 12

Enhanced Radiative Efficiency in GaN Nanowires Grown on Sputtered TiNx: Effects of Surface Electric Fields

2021 · Thomas Auzelle, Mani Azadmand, et al. · ACS Photonics · 11

Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires

2013 · J. Rodrigues, S. M. C. Miranda, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 11

AlN Nanowire-Based Vertically Integrated Piezoelectric Nanogenerators

2024 · N. Buatip, T. Auzelle, et al. · ACS Applied Nano Materials · 10

Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy

2019 · C. Sinito, P. Corfdir, et al. · Nano Letters · 10

Electronic properties of air-exposed GaN(11-00) and (0001) surfaces after several device processing compatible cleaning steps

2019 · T. Auzelle, F. Ullrich, et al. · Applied Surface Science · 10

External Control of GaN Band Bending Using Phosphonate Self-Assembled Monolayers

2021 · Thomas Auzelle, Florian Ullrich, et al. · ACS Applied Materials & Interfaces · 9

Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles

2024 · Jingxuan Kang, Rose-Mary Jose, et al. · Nanotechnology · 8

Works count: 49

Citation count: 664

H-index: 14

I10-index: 23