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Saurabh Lodha

Few-Layer MoS2 p-Type Devices Enabled by Selective Doping Using Low Energy Phosphorus Implantation
2016 · Ankur Nipane, Debjani Karmakar, et al. · ACS Nano · 399
Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor
2017 · Sriram Krishnamoorthy, Zhanbo Xia, et al. · Applied Physics Letters · 321
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Schottky barrier heights for Au and Pd contacts to MoS2
2014 · Naveen Kaushik, Ankur Nipane, et al. · Applied Physics Letters · 283
Near-Direct Bandgap WSe2/ReS2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics
2020 · Abin Varghese, Dipankar Saha, et al. · Nano Letters · 267
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High performance 32nm logic technology featuring 2nd generation high-k + metal gate transistors
2009 · P. Packan, S. Akbar, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 192
A 32nm logic technology featuring 2nd-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm2 SRAM cell size in a 291Mb array
2008 · S. Natarajan, M. Armstrong, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 185
Reversible hysteresis inversion in MoS2 field effect transistors
2017 · Naveen Kaushik, David M. A. Mackenzie, et al. · npj 2D Materials and Applications · 181
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Demonstration of β-(AlxGa1-x)2O3/Ga2O3 double heterostructure field effect transistors
2018 · Yuewei Zhang, Chandan Joishi, et al. · Applied Physics Letters · 171
$\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz
2019 · Zhanbo Xia, Hao Xue, et al. · IEEE Electron Device Letters · 162
Interfacial n-Doping Using an Ultrathin TiO 2 Layer for Contact Resistance Reduction in MoS 2
2015 · Naveen Kaushik, Debjani Karmakar, et al. · ACS Applied Materials & Interfaces · 148
Low-pressure CVD-grown β-Ga 2 O 3 bevel-field-plated Schottky barrier diodes
2018 · Chandan Joishi, Subrina Rafique, et al. · Applied Physics Express · 145
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Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts
2018 · Zhanbo Xia, Chandan Joishi, et al. · IEEE Electron Device Letters · 140
Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction
2021 · Sayantan Ghosh, Abin Varghese, et al. · Nature Communications · 137
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Optoelectronic and photonic devices based on transition metal dichalcogenides
2020 · Kartikey Thakar, Saurabh Lodha · Materials Research Express · 120
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Breakdown Characteristics of $\beta$ -(Al 0.22 Ga 0.78 ) 2 O 3 /Ga 2 O 3 Field-Plated Modulation-Doped Field-Effect Transistors
2019 · Chandan Joishi, Yuewei Zhang, et al. · IEEE Electron Device Letters · 115
Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications
2018 · Kartikey Thakar, Bablu Mukherjee, et al. · ACS Applied Materials & Interfaces · 114
Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer
2012 · Prashanth Paramahans Manik, Ravi Kesh Mishra, et al. · Applied Physics Letters · 109
Trapping Effects in Si -Doped -Ga2O3 MESFETs on an Fe-Doped -Ga2O3 Substrate
2018 · Joe F. Mcglone, Zhanbo Xia, et al. · IEEE Electron Device Letters · 108
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Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts
2013 · Shashank Gupta, Prashanth Paramahans Manik, et al. · Journal of Applied Physics · 104
Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy
2012 · V. S. S. Srinivasan, S. Chopra, et al. · IEEE Electron Device Letters · 98
Angiotensin II-Induced Mesangial Cell Apoptosis: Role of Oxidative Stress
2002 · Saurabh Lodha, Dhimant Dani, et al. · Molecular Medicine · 91
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Solution-Processed Poly(3,4-ethylenedioxythiophene) Thin Films as Transparent Conductors: Effect of p -Toluenesulfonic Acid in Dimethyl Sulfoxide
2014 · Smita Mukherjee, Rekha Singh, et al. · ACS Applied Materials & Interfaces · 76
Wavelength‐Controlled Photocurrent Polarity Switching in BP‐MoS2 Heterostructure
2022 · Himani Jawa, Abin Varghese, et al. · Advanced Functional Materials · 72
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Polarity-Tunable Photocurrent through Band Alignment Engineering in a High-Speed WSe2/SnSe2 Diode with Large Negative Responsivity
2022 · Sayantan Ghosh, Abin Varghese, et al. · ACS Nano · 72
Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors
2018 · Chandan Joishi, Zhanbo Xia, et al. · Applied Physics Letters · 65
Works count: 203
Citation count: 5,536
H-index: 35
I10-index: 80
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