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C. Jaussaud

Observed names: C Jaussaud, C. JAUSSAUD, Claude JAUSSAUD, Claude Jaussaud, Claude Jaussaud Claude Jaussaud, Jaussaud, C.
Observed institutions: Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire d’Innovation pour les Technologies des Énergies Nouvelles et les nanomatériaux, CEA Grenoble, Institut National de l'Énergie Solaire, Direction de la Recherche Technologique, Institut Néel, Laboratoire d'Électronique des Technologies de l'Information, Institut National des Sciences Appliquées de Lyon
OpenAlex ID: A5077760049
Silicon carbide on insulator formation using the Smart Cut process [Note 1]
1996 · L. Di Cioccio, Y. Le Tiec, et al. · Electronics Letters · 131
Silicon carbide on insulator formation by the Smart-Cut® process
1997 · L. Di Cioccio, F. Letertre, et al. · Materials Science and Engineering B · 109
Atomic Structure of the β -SiC(100)-( 3×2 ) Surface
1996 · F. Semond, P. Soukiassian, et al. · Physical Review Letters · 102
Microstructure of silicon implanted with high dose oxygen ions
1985 · C. Jaussaud, J. Stoemenos, et al. · Applied Physics Letters · 94
Full process for integrating silicon nanowire arrays into solar cells
2009 · Simon Perraud, Séverine Poncet, et al. · Solar Energy Materials and Solar Cells · 92
New conditions for synthesizing SOI structures by high dose oxygen implantation
1985 · J. Stoemenos, C. Jaussaud, et al. · Journal of Crystal Growth · 82
Absorption coefficients of various pollutant gases at CO_2 laser wavelengths; application to the remote sensing of those pollutants
1978 · A. Mayer, J. Comera, et al. · Applied Optics · 75
Low-frequency, high-temperature conductance and capacitance measurements on metal-oxide-silicon carbide capacitors
1994 · T. Ouisse, N. Bécourt, et al. · Journal of Applied Physics · 69
From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena
1988 · J.L. Leray, E. Dupont-Nivet, et al. · IEEE Transactions on Nuclear Science · 69
Nickel film on (001) SiC: Thermally induced reactions
1998 · A Bächli, M.-A Nicolet, et al. · Materials Science and Engineering B · 67
Reduced defect density in silicon-on-insulator structures formed by oxygen implantation in two steps
1989 · J. Margail, J. Stoemenos, et al. · Applied Physics Letters · 64
FULLSPECTRUM: a new PV wave making more efficient use of the solar spectrum
2004 · A. Luque, A. Martí, et al. · Solar Energy Materials and Solar Cells · 55
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Interfacial reactions of W thin film on single-crystal (001) β-SiC
1995 · L. Baud, C. Jaussaud, et al. · Materials Science and Engineering B · 51
Oxidation kinetics of SiC deposited from CH3SiCl3/H2 under CVI conditions
1992 · L. Filipuzzi, R. Naslain, et al. · Journal of Materials Science · 49
Quadrupolar interactions in TmCu
1980 · C. Jaussaud, P. Morin, et al. · Journal of Magnetism and Magnetic Materials · 49
Silicon-on-insulator material formed by oxygen implantation and high-temperature annealing: Carrier transport, oxygen activity, and interface properties
1987 · S. Cristoloveanu, S. Gardner, et al. · Journal of Applied Physics · 48
Influence of iron contamination on the performances of single-crystalline silicon solar cells: Computed and experimental results
2006 · S. Dubois, O. Palais, et al. · Journal of Applied Physics · 44
SiO2 buried layer formation by subcritical dose oxygen ion implantation
1986 · J. Stoemenos, J. Margail, et al. · Applied Physics Letters · 43
Influence of temperature on the formation by reactive CVD of a silicon carbide buffer layer on silicon
1993 · N. Bécourt, J.L. Ponthenier, et al. · Physica B Condensed Matter · 41
Contact resistivity of Re, Pt and Ta films on n-type β-SiC: Preliminary results
1995 · J.S. Chen, A. Bächli, et al. · Materials Science and Engineering B · 34
Electrical characterization of SiC for high-temperature thermal-sensor applications
1995 · C. Dezauzier, N. Becourt, et al. · Sensors and Actuators A Physical · 29
Correlation of optical and photoluminescence properties in amorphous SiNx:H thin films deposited by PECVD or UVCVD
2006 · J.-F. Lelièvre, J. De la Torre, et al. · Thin Solid Films · 27
Reaction of Ta thin film with single crystalline (001) β-SiC
1994 · J. S. Chen, E. Kolawa, et al. · Journal of Applied Physics · 27
Electrical characterization of instabilities in 6H silicon carbide metal-oxide-semiconductor capacitors
1994 · Christophe Raynaud, Jean-Luc Autran, et al. · Journal of Applied Physics · 27
Chemical contribution of oxygen to silicon carbide plasma etching kinetics in a distributed electron cyclotron resonance (DECR) reactor
1999 · Frédéric Lanois, Dominique Planson, et al. · Journal of Electronic Materials · 26
Works count: 90
Citation count: 1,986
H-index: 26
I10-index: 47
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