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Hiromasa Suo
Observed names:
H. Suo,
スオウ, ヒロマサ
Institution:
Resonac (Japan)
Observed institutions:
University of Tsukuba,
Tohoku University,
Showa Denko (Japan),
Resonac (Japan),
Advanced Power Electronics Research Center,
National Institute of Advanced Industrial Science and Technology
show all 6
ORCID:
0000-0003-1836-1384
Observed ORCID:
0000-0003-1836-1384
OpenAlex ID:
A5078649331
Growth of P-type 4H–SiC single crystals by physical vapor transport using aluminum and nitrogen co-doping
2017
·
Kazuma Eto
, Hiromasa Suo
, et al.
·
Journal of Crystal Growth
·
44
Reduction of threading screw dislocations in 4H-SiC crystals by a hybrid method with solution growth and physical vapor transport growth
2021
·
Takeshi Mitani
, Kazuma Eto
, et al.
·
Journal of Crystal Growth
·
24
Photoluminescence wavelength from stacking fault with complicated structure in 4H-SiC epitaxial layer
2022
·
Hiromasa Suo
, Tamotsu Yamashita
, et al.
·
Japanese Journal of Applied Physics
·
17
PDF
Evaluation of the increase in threading dislocation during the initial stage of physical vapor transport growth of 4H-SiC
2018
·
Hiromasa Suo
, Susumu Tsukimoto
, et al.
·
Japanese Journal of Applied Physics
·
15
PDF
Application of Defect Conversion Layer by Solution Growth for Reduction of TSDs in 4H-SiC Bulk Crystals by PVT Growth
2019
·
Naoyoshi Komatsu
, Takeshi Mitani
, et al.
·
Materials science forum
·
14
Difference of double Shockley-type stacking faults expansion in highly nitrogen-doped and nitrogen-boron co-doped n-type 4H-SiC crystals
2016
·
H. Suo
, K. Eto
, et al.
·
Journal of Crystal Growth
·
14
Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate
2019
·
Hiromasa Suo
, Tamotsu Yamashita
, et al.
·
Japanese Journal of Applied Physics
·
11
PDF
Crystal growth and evaluation of nitrogen and aluminum co-doped N-type 4H-SiC grown by physical vapor transport
2018
·
H. Suo
, K. Eto
, et al.
·
Journal of Crystal Growth
·
11
Polarization property of terahertz wave emission from gammadion-type photoconductive antennas
2013
·
Hiromasa Suo
, Keisuke Takano
, et al.
·
Applied Physics Letters
·
11
Temperature Dependence of Double Shockley Stacking Fault Behavior in Nitrogen-Doped 4h-Sic Studied by In-Situ Synchrotron X-Ray Topography
2020
·
Fumihiro Fujie
, Shunta Harada
, et al.
·
Acta Materialia
·
9
Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping
2016
·
Kazuma Eto
, Hiromasa Suo
, et al.
·
Materials science forum
·
8
Immobilization of partial dislocations bounding double Shockley stacking faults in 4H-SiC observed by in situ synchrotron X-ray topography
2021
·
Fumihiro Fujie
, Shunta Harada
, et al.
·
Materialia
·
6
Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping
2017
·
Hiromasa Suo
, Kazuma Eto
, et al.
·
Materials science forum
·
6
Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals
2023
·
T. Yamashita
, H. Suo
, et al.
·
Journal of Crystal Growth
·
5
Threading dislocation increase in the initial stage of growth of nitrogen and boron co-doped 4H-SiC by physical vapor transport
2022
·
H. Suo
, K. Eto
, et al.
·
Journal of Crystal Growth
·
3
Corrigendum: “Evaluation of the increase in threading dislocation during the initial stage of physical vapor transport growth of 4H-SiC” [Jpn. J. Appl. Phys. 57, 065501 (2018)]
2018
·
Hiromasa Suo
, Susumu Tsukimoto
, et al.
·
Japanese Journal of Applied Physics
·
2
PDF
Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal
2018
·
Naohiro Sugiyama
, Hiromasa Suo
, et al.
·
Materials science forum
·
2
Characterization of Stacking Faults Formed in 4H-SiC Epitaxial Films
2025
·
Tamotsu Yamashita
, Shohei Hayashi
, et al.
·
Materia Japan
Terahertz emission from gammadion-type photoconductive antennas
2011
·
Hiromasa Suo
, Keisuke Takano
, et al.
·
International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
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Works count:
20
Citation count:
202
H-index:
9
I10-index:
9
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