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Marc Portail

Observed names: M Portail, M. Portail, MARC PORTAIL, Portail Marc, Portail, M., Portail, Marc
Observed institutions: Université de Tours, Centre National de la Recherche Scientifique, Université Côte d'Azur, Aix-Marseille Université, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Institut d'Astrophysique de Paris, Columbia Region Healthcare Engineers Association, NOVASiC (France), Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Physique des interactions ioniques et moléculaires, Saint-Gobain Recherche Paris, Université de Provence Aix-Marseille I, Communauté d'universités et d'établissements Université Côte d'Azur
ORCID: 0000-0002-2305-6758
Observed ORCID: 0000-0002-2305-6758
OpenAlex ID: A5079499073
Epitaxial graphene on cubic SiC(111)/Si(111) substrate
2010 · A. Ouerghi, A. Kahouli, et al. · Applied Physics Letters · 113
An evaporite sequence from ancient brine recorded in Bennu samples
2025 · T. J. McCoy, S. S. Russell, et al. · Nature · 110
Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide
2015 · F. Lafont, R. Ribeiro-Palau, et al. · Nature Communications · 100
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Screening and engineering of colour centres in diamond
2018 · Tobias Lühmann, Nicole Raatz, et al. · Journal of Physics D Applied Physics · 96
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Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition
2010 · A. Michon, S. Vézian, et al. · Applied Physics Letters · 95
Chondrules as direct thermochemical sensors of solar protoplanetary disk gas
2018 · Guy Libourel, Marc Portail · Science Advances · 87
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Comparative study of the role of the nucleation stage on the final crystalline quality of (111) and (100) silicon carbide films deposited on silicon substrates.
2009 · M. Portail, M. Zielinski, et al. · Journal of Applied Physics · 72
Evidence of electrical activity of extended defects in 3C–SiC grown on Si
2010 · X. Song, J. F. Michaud, et al. · Applied Physics Letters · 71
Epitaxial graphene on 3C-SiC(111) pseudosubstrate: Structural and electronic properties
2010 · A. Ouerghi, M. Marangolo, et al. · Physical Review B · 69
Mineralogical evidence for hydrothermal alteration of Bennu samples
2025 · T. J. Zega, T. J. McCoy, et al. · Nature Geoscience · 66
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Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111)
2010 · A. Ouerghi, R. Belkhou, et al. · Applied Physics Letters · 66
Strain and wafer curvature of 3C‐SiC films on silicon: influence of the growth conditions
2007 · M. Zielinski, S. Ndiaye, et al. · physica status solidi (a) · 62
Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition
2013 · A. Michon, S. Vézian, et al. · Journal of Applied Physics · 58
Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor
2008 · M. Zielinski, M. Portail, et al. · Journal of Crystal Growth · 56
Sharp interface in epitaxial graphene layers on 3 C -SiC(100)/Si(100) wafers
2011 · A. Ouerghi, M. Ridene, et al. · Physical Review B · 53
An overview of the petrography and petrology of particles from aggregate sample from asteroid Bennu
2025 · Harold C. Connolly, Dante S. Lauretta, et al. · Meteoritics and Planetary Science · 52
AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)
2008 · Yvon Cordier, Marc Portail, et al. · Journal of Crystal Growth · 52
Tuning the transport properties of graphene films grown by CVD on SiC(0001): Effect ofin situhydrogenation and annealing
2014 · B. Jabakhanji, A. Michon, et al. · Physical Review B · 39
Graphitization of the 6H–SiC() surface studied by HREELS
2002 · T. Angot, M. Portail, et al. · Surface Science · 39
Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC
2012 · M. Portail, A. Michon, et al. · Journal of Crystal Growth · 37
Transmission electron microscopy investigation of microtwins and double positioning domains in (111) 3C-SiC in relation with the carbonization conditions
2009 · S. Roy, M. Portail, et al. · Applied Physics Letters · 29
Elaboration of (111) oriented 3C–SiC/Si layers for template application in nitride epitaxy
2009 · M. Zielinski, M. Portail, et al. · Materials Science and Engineering B · 28
Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon
2012 · M. Zielinski, J. F. Michaud, et al. · Journal of Applied Physics · 27
Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition
2014 · A. Michon, A. Tiberj, et al. · Applied Physics Letters · 26
Dispersion of the interband π electronic excitation of highly oriented pyrolytic graphite measured by high resolution electron energy loss spectroscopy
2000 · N. Papageorgiou, M. Portail, et al. · Surface Science · 24
Works count: 268
Citation count: 2,331
H-index: 24
I10-index: 57
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