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D.A. Macquistan

Observed names: D. A. Macquistan, D. MacQuistan, D. Macquistan, D.A. MacQuistan, David Macquistan, Macquistan, David Alexander
Institution: TeraXion (Canada)
OpenAlex ID: A5080220054
Scanning spreading resistance microscopy study of a metalorganic chemical vapor deposited grown InP optoelectronic structure
2001 · St. J. Dixon-Warren, R. P. Lu, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 33
Low Loss InP C-Band IQ Modulator with 40GHz Bandwidth and 1.5V Vπ
2015 · Gregory Letal, Kelvin Prosyk, et al. · Optical Fiber Communication Conference · 27
Setting limits on the accuracy of X-ray determination of Al concentration in epitaxial layers
1997 · I.C. Bassignana, D.A. Macquistan, et al. · Journal of Crystal Growth · 22
Variation in the lattice parameter and crystal quality of commercially available Si-doped GaAs substrates
1997 · I.C. Bassignana, D.A. Macquistan, et al. · Journal of Crystal Growth · 14
The behaviour of copper on gallium arsenide
1991 · D.A. MacQuistan, F. Weinberg · Journal of Crystal Growth · 8
Scanning birefringence mapping of semi-insulating GaAs wafers
2005 · R.D. Clayton, I.C. Bassignana, et al. · Conference on Semi-insulating III-V Materials (SIMC) · 7
Metalorganic vapor phase diffusion using dimethylzinc. Part I: Analysis of the reproducibility of the resulting diffusion profile as measured by secondary ion mass spectrometry
2004 · C. A. Hampel, C. Blaauw, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 7
X-ray Topography and TEM Study of Crystal Defect Propagation in Epitaxially Grown AIGaAs Layers on GaAs(001)
1990 · L. C. Bassignana, D.A. Macquistan, et al. · Advances in X-ray Analysis · 3
Reactions between molten aluminum and pyrolytic boron nitride crucibles
1993 · A. J. SpringThorpe, A. Majeed, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2
X-Ray Topography and TEM Study of Crystal Defect Propagation in Epitaxially Grown AlGaAs Layers on GaAs(001)
1991 · I. C. Bassignana, D. A. Macquistan, et al. · Springer eBooks · 2
Improved p-doping profiles in lasers and modulators
2003 · J.E. Haysom, R. Glew, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 1
Crystal Quality of III-V Substrate Wafers and Epitaxial Layers Studied by X-Ray Topography
1993 · I. C. Bassignana, D. A. Macquistan · MRS Proceedings · 1
X-ray topography used as a routine tool in the evaluation of the crystal quality of GaAs substrate wafers
2005 · I.C. Bassignana, D.A. Macquistan · Conference on Semi-insulating III-V Materials (SIMC)
Recent Applications of X-Ray Topography to the Study of III-V Semiconductors
1994 · I.C. Bassignana, D.A. Macquistan · Elsevier eBooks
Routine, rapid, non-destructive analysis of semiconductor wafer substrates by reflection asymmetric crystal X-ray topography
1993 · I. C. Bassignana, D. A. Macquistan · Acta Crystallographica Section A Foundations of Crystallography
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X-Ray DCD and EPMA Measurements of Al Concentration in Epitaxial AlxGa1-xAs/GaAs Layers
1993 · D. A. Macquistan, I. C. Bassignana, et al. · Springer eBooks
X-Ray DCD and EPMA Measurements of Al Concentration in Epitaxial AlxGa1-xAs/GaAs Layers
1992 · D.A. Macquistan, I.C. Bassignana, et al. · Advances in X-ray Analysis
Works count: 18
Citation count: 127
H-index: 7
I10-index: 4
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