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Romina Zonca

Observed names: R Zonca, R. ZONCA, R. Zonca
OpenAlex ID: A5083225583
Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements
2004 · S. Privitera, E. Rimini, et al. · Applied Physics Letters · 217
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
2004 · F. Pellizzer, A. Pirovano, et al. · Symposium on VLSI Technology · 199
Crystal nucleation and growth processes in Ge2Sb2Te5
2004 · S. Privitera, C. Bongiorno, et al. · Applied Physics Letters · 82
Crystallization and phase separation in Ge2+xSb2Te5 thin films
2003 · S. Privitera, E. Rimini, et al. · Journal of Applied Physics · 75
Ti diffusion in chalcogenides: a ToF-SIMS depth profile characterization approach
2004 · S.G. Alberici, R. Zonca, et al. · Applied Surface Science · 48
Kinetic Modeling and Dopant Effect on Silicon Deposition: Low Pressure and Plasma Assisted Chemical Vapor Deposition
1999 · Maurizio Masi, Romina Zonca, et al. · Journal of The Electrochemical Society · 15
Nitridation of Thin Gate or Tunnel Oxides by Nitric Oxide
1999 · C. Gerardi, R. Zonca, et al. · Journal of The Electrochemical Society · 13
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A Novel Method for the Simultaneous Characterization of Bulk Impurities and Surface States by Photocurrent Measurements
2000 · M. L. Polignano, A. P. Caricato, et al. · Journal of The Electrochemical Society · 10
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Surface Recombination Velocity from Photocurrent Measurements: Validation and Applications
1999 · M. L. Polignano, N. Bellafiore, et al. · Journal of The Electrochemical Society · 8
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Effects of nitridation by nitric oxide on the leakage current of thin SiO2 gate oxides
2000 · C. Gerardi, M. Melanotte, et al. · Journal of Applied Physics · 7
Amorphous-to-polycrystal transition in GeSbTe thin films
2003 · S. Privitera, C. Bongiomo, et al. · MRS Proceedings · 4
The impact of the nitridation process on the properties of the Si–SiO2 interface
2001 · M.L. Polignano, M. Alessandri, et al. · Journal of Non-Crystalline Solids · 4
Surface morphology of nitrided thin thermal SiO2 studied by atomic force microscopy
1999 · Grazia Tallarida, Francesco Cazzaniga, et al. · Journal of Non-Crystalline Solids · 4
In-situ time-resolved reflectivity: a technique useful to investigate solid-state transformations
2002 · F. Corni, R. Tonini, et al. · Materials Science and Engineering B · 3
Surface characterization by photocurrent measurements
2000 · M.L Polignano, A.P Caricato, et al. · Applied Surface Science · 3
Characterization of nitrided silicon-silicon dioxide interfaces
1999 · M. L. Polignano, M. Alessandri, et al. · MRS Proceedings · 3
Interface properties of annealed and nitrided HTO layers
2001 · M.L Polignano, C Carpanese, et al. · Microelectronic Engineering · 2
High quality thin oxynitride by RTP annealing of in situ steam generation oxides for flash memory applications
2001 · D Brazzelli, G Ghidini, et al. · Solid-State Electronics · 2
Tunnel Oxide Optimization for Device Scaling down: Nitridation Impact on Stress Induced Leakage Current
2001 · G. Ghidini, A. Sebastiani, et al. · European Solid-State Device Research Conference · 2
XPS and SIMS depth profiling of chlorine in high‐temperature oxynitrides
2002 · L. Vanzetti, M. Bersani, et al. · Surface and Interface Analysis · 1
Nitridation of gate and tunnel oxides employed in CMOS-ULSI technology
2000 · C. Gerardi, M. Melanotte, et al. · Micron · 1
Amorphous-to-fcc Transition in GeSbTe Alloys
2006 · S. Privitera, C. Bongiorno, et al. · Springer eBooks
Electrical characterisation of oxides grown in different RTP ambients
2000 · D Brazzelli, G Ghidini, et al. · Microelectronics Reliability
Chatacterization of nitrided silicon-silicon dioxide interfaces
2000 · M. L. POLIGNANO, M. ALESSANDRI, et al. · AIRUS
Ultrathin NO/N2O Oxynitride Dielectric For Advanced Flash Memory Application: Single Wafer and Batch Technology
1999 · R. Zonca, B. Crivelli, et al. · MRS Proceedings
Works count: 27
Citation count: 703
H-index: 8
I10-index: 8
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