Author

Renu Whig

Observed names: R Whig, R. Whig, Whig, Renu

Institution: Applied Materials (United States)

Observed institutions: Motorola (United States), Applied Materials (United States), Everspin Technologies (United States)

OpenAlex ID: A5083551050

Recent developments in magnetic tunnel junction MRAM

2000 · S. Tehrani, B. Engel, et al. · IEEE Transactions on Magnetics · 331

A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS Technology

2013 · N. D. Rizzo, D. Houssameddine, et al. · IEEE Transactions on Magnetics · 150

Comparison of oxidation methods for magnetic tunnel junction material

2000 · E. Y. Chen, R. Whig, et al. · Journal of Applied Physics · 53

CMOS-embedded STT-MRAM arrays in 2x nm nodes for GP-MCU applications

2017 · D. Shum, D. Houssameddine, et al. · Symposium on VLSI Technology · 52

High density ST-MRAM technology (Invited)

2012 · J. M. Slaughter, N. D. Rizzo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 45

Technology for reliable spin-torque MRAM products

2016 · J. M. Slaughter, K. Nagel, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 39

Heat-driven spin transport in a ferromagnetic metal

2014 · Yadong Xu, Bowen Yang, et al. · Applied Physics Letters · 23

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Process Optimization of Perpendicular Magnetic Tunnel Junction Arrays for Last-Level Cache beyond 7 nm Node

2018 · Lin Xue, Chi Ching, et al. · Symposium on VLSI Technology · 20

Device performance in a fully functional 800MHz DDR3 spin torque magnetic random access memory

2013 · J. Janesky, N.D. Rizzo, et al. · IEEE International Memory Workshop (IMW) · 13

Surface modification and cleaning enhancement of TaSi(N) films with dilute hydrofluoric acid

2000 · P. J. S. Mangat, W. J. Dauksher, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 8

Spin-torque MRAM product status and technology for 40nm, 28nm and 22nm nodes

2017 · J.M. Slaughter, K. Nagel, et al. · IEEE International Magnetics Conference · 7

Enabling STT-MRAM in High Volume Manufacturing for LLC Applications

2019 · R. Whig, C. Ching, et al. · IEEE International Memory Workshop (IMW) · 6

Spintronics-based devices for Microwave Power Harvesting

2012 · Simon Hemour, Dimitri Houssameddine, et al. · IEEE MTT-S International Microwave Symposium digest · 6

Toggle and spin-torque MRAM: status and outlook (特集 MRAM最前線)

2010 · J. M. Slaughter, Nicholas D. Rizzo, et al. · まぐね = Magnetics Japan · 4

Technology Status and Potential for High Speed Nonvolatile Magnetoresistive RAM

2000 · S. Tehrani, M. Durlam, et al. · 日本応用磁気学会研究会資料 · 2

Characterization of oxynitride hard mask removal processes for refractory x-ray mask fabrication

1998 · Cameron J. Brooks, Douglas E. Benoit, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2

Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability

2025 · Bruno Coppolelli, Davide Cornigli, et al. · IEEE International Reliability Physics Symposium proceedings

信頼性のあるスピントルクMRAM製品のための技術【Powered by NICT】

2016 · J M Slaughter, K Nagel, et al. · IEEE Conference Proceedings

Spin current draining effect on heat-driven spin transport

2015 · Yadong Xu, Bowen Yang, et al. · Bulletin of the American Physical Society

Spin-Torque Switching in Integrated ST-MRAM Arrays

2010 · J. M. Slaughter, Nicholas D. Rizzo, et al. · 한국자기학회 학술연구발표회 논문개요집

Works count: 21

Citation count: 761

H-index: 9

I10-index: 9