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A. Kakanakova‐Georgieva

Observed names: A Kakanakova-Georgieva, A. Georgieva, A. Kakanakova, A. Kakanakova-Georgieva, A. Kakanakova-georgieva, A. Kakanakova–Georgieva, Anelia Kakanakova, Anelia Kakanakova-Georgieva, Anelia Kakanakova-Gerorgieva, Anelia Kakanakova‐Georgieva, Kakanakova-Georgieva, Anelia
Observed institutions: Linköping University, University of Iceland, Bulgarian Academy of Sciences, Institute of General and Inorganic Chemistry, Institute for Technical Physics and Materials Science, HUN-REN Centre for Energy Research, Sofia University "St. Kliment Ohridski"
ORCID: 0000-0002-7042-2351
Observed ORCID: 0000-0002-7042-2351
OpenAlex ID: A5083905585
Nickel based ohmic contacts on SiC
1997 · Ts. Marinova, A. Kakanakova-Georgieva, et al. · Materials Science and Engineering B · 125
Defects in hexagonal-AlN sheets by first-principles calculations
2012 · E. F. de Almeida, F. de Brito Mota, et al. · The European Physical Journal B · 121
Topological Insulating Phases in Two-Dimensional Bismuth-Containing Single Layers Preserved by Hydrogenation
2015 · R. R. Q. Freitas, R. Rivelino, et al. · The Journal of Physical Chemistry C · 119
Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties
2016 · Renato B dos Santos, F de Brito Mota, et al. · Nanotechnology · 107
A perspective on thermal stability and mechanical properties of 2D Indium Bismide from ab initio molecular dynamics
2022 · Christoffer Lundgren, Anelia Kakanakova-Georgieva, et al. · Nanotechnology · 105
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Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
2010 · M. Fagerlind, F. Allerstam, et al. · Journal of Applied Physics · 105
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Ab initio molecular dynamics of atomic-scale surface reactions: insights into metal organic chemical vapor deposition of AlN on graphene
2018 · D. G. Sangiovanni, G. K. Gueorguiev, et al. · Physical Chemistry Chemical Physics · 96
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Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material
2016 · D Nilsson, E Janzén, et al. · Journal of Physics D Applied Physics · 88
Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers
2009 · G.J. Riedel, J.W. Pomeroy, et al. · IEEE Electron Device Letters · 86
Growth of 6H and 4H–SiC by sublimation epitaxy
1999 · M. Syväjärvi, R. Yakimova, et al. · Journal of Crystal Growth · 85
2D graphitic-like gallium nitride and other structural selectivity in confinement at the graphene/SiC interface
2023 · Gianfranco Sfuncia, Giuseppe Nicotra, et al. · CrystEngComm · 80
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Indium Nitride at the 2D Limit
2020 · Béla Pécz, Giuseppe Nicotra, et al. · Advanced Materials · 76
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Discovering atomistic pathways for supply of metal atoms from methyl-based precursors to graphene surface
2022 · Davide G. Sangiovanni, Ricardo Faccio, et al. · Physical Chemistry Chemical Physics · 73
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MOCVD of AlN on epitaxial graphene at extreme temperatures
2020 · Anelia Kakanakova-Georgieva, Ivan G. Ivanov, et al. · CrystEngComm · 73
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Material proposal for 2D indium oxide
2021 · Anelia Kakanakova-Georgieva, Filippo Giannazzo, et al. · Applied Surface Science · 72
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Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface
2020 · Anelia Kakanakova-Georgieva, Gueorgui K. Gueorguiev, et al. · Nanoscale · 70
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Stable and metastable Si negative-U centers in AlGaN and AlN
2014 · Xuan Thang Trinh, Daniel Nilsson, et al. · Applied Physics Letters · 62
Electrochemical deposition of thin zirconia films on stainless steel 316 L
2000 · P Stefanov, D Stoychev, et al. · Materials Chemistry and Physics · 62
High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures
2011 · A. Kakanakova-Georgieva, D. Nilsson, et al. · Journal of Crystal Growth · 56
Dopant species with Al–Si and N–Si bonding in the MOCVD of AlN implementing trimethylaluminum, ammonia and silane
2015 · R B dos Santos, R Rivelino, et al. · Journal of Physics D Applied Physics · 54
Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AlN
2008 · A. Kakanakova-Georgieva, R. R. Ciechonski, et al. · Crystal Growth & Design · 52
Exploring 2D structures of indium oxide of different stoichiometry
2021 · Renato Batista dos Santos, Roberto Rivelino, et al. · CrystEngComm · 51
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Spin-orbit-induced gap modification in buckled honeycomb XBi and XBi 3 ( X = B, Al, Ga, and In) sheets
2015 · R R Q Freitas, F de Brito Mota, et al. · Journal of Physics Condensed Matter · 51
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Feasibility of novel (H 3 C) n X(SiH 3 ) 3−n compounds (X = B, Al, Ga, In): structure, stability, reactivity, and Raman characterization from ab initio calculations
2015 · Renato B. dos Santos, R. Rivelino, et al. · Dalton Transactions · 51
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Tuning band inversion symmetry of buckled III-Bi sheets by halogenation
2016 · R R Q Freitas, F de Brito Mota, et al. · Nanotechnology · 50
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Works count: 122
Citation count: 2,989
H-index: 36
I10-index: 53
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