Author

H.‐J. Lugauer

Observed names: H J Lugauer, H Lugauer, H. -J. Lugauer, H. J. Lugauer, H. Lugauer, H.-J Lugauer, H.-J. Lugauer, H.J Lugauer, H.J. Lugauer, Hans Lugauer, Hans-Juergen Lugauer, Lugauer, H.-J.

Institution: OSRAM (Germany)

Observed institutions: Saratov State University, Aston University, University of Würzburg, Saint Petersburg State Electrotechnical University, OSRAM (Germany), Osram Opto Semiconductors, University of Regensburg, Ioffe Institute

ORCID: 0000-0001-7771-6072

Observed ORCID: 0000-0001-7771-6072

OpenAlex ID: A5085582664

Molecular-beam epitaxy of beryllium-chalcogenide-based thin films and quantum-well structures

1996 · A. Waag, F. Fischer, et al. · Journal of Applied Physics · 213

Laser diodes based on beryllium-chalcogenides

1997 · A. Waag, F. Fischer, et al. · Applied Physics Letters · 133

Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

2013 · M. Binder, A. Nirschl, et al. · Applied Physics Letters · 130

Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes

2014 · Ilya E. Titkov, Sergey Yu. Karpov, et al. · IEEE Journal of Quantum Electronics · 120

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On the origin of IQE‐‘droop’ in InGaN LEDs

2009 · Ansgar Laubsch, Matthias Sabathil, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 119

Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

2014 · M. Auf der Maur, B. Galler, et al. · Applied Physics Letters · 111

Phosphor Selection Considerations for Near-UV LED Solid State Lighting

2012 · J. McKittrick, M. E. Hannah, et al. · ECS Journal of Solid State Science and Technology · 111

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Novel beryllium containing II–VI compounds: basic properties and potential applications

1998 · A. Waag, Th. Litz, et al. · Journal of Crystal Growth · 91

CdSe fractional-monolayer active region of molecular beam epitaxy grown green ZnSe-based lasers

1999 · S. V. Ivanov, A. A. Toropov, et al. · Applied Physics Letters · 80

Ellipsometric studies of BexZn1−xSe between 3 eV and 25 eV

1999 · K. Wilmers, T. Wethkamp, et al. · Physical review. B, Condensed matter · 70

GaN-Based LEDs and Lasers on SiC

2000 · V. H�rle, B. Hahn, et al. · physica status solidi (a) · 44

ZnSe-based blue-green lasers with a short-period superlattice waveguide

1998 · S. Ivanov, A. Toropov, et al. · Applied Physics Letters · 40

II–VI light-emitting devices based on beryllium chalcogenides

1997 · F. Fischer, G. Landwehr, et al. · Journal of Crystal Growth · 37

Beryllium chalcogenides for ZnSe-based light emitting devices

1997 · A. Waag, F. Fischer, et al. · Materials Science and Engineering B · 33

VUV-ellipsometry on BexZn1−xSe and BeTe

1999 · K. Wilmers, T. Wethkamp, et al. · Journal of Electronic Materials · 32

Resonant inelastic soft x-ray scattering of Be chalcogenides

2006 · D. Eich, O. Fuchs, et al. · Physical Review B · 31

Reduction of the extended defect density in molecular beam epitaxy grown ZnSe based II-VI heterostructures by the use of a BeTe buffer layer

1998 · F. Fischer, M. Keller, et al. · Journal of Applied Physics · 31

Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates

2001 · U. Zehnder, A. Weimar, et al. · Journal of Crystal Growth · 30

Luminescence properties of thick InGaN quantum‐wells

2009 · Ansgar Laubsch, Werner Bergbauer, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 28

Influence of an in situ-deposited intermediate layer inside GaN and AlGaN layers on SiC substrates

2006 · K. Engl, M. Beer, et al. · Journal of Crystal Growth · 27

Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates

2004 · N. Gmeinwieser, K. Engl, et al. · Journal of Applied Physics · 27

Spatially dependent carrier dynamics in single InGaN/GaN core-shell microrod by time-resolved cathodoluminescence

2018 · W. Liu, C. Mounir, et al. · Applied Physics Letters · 26

Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements

2017 · I. Reklaitis, F. Nippert, et al. · Journal of Applied Physics · 24

Investigation of the carrier distribution in InGaN‐based multi‐quantum‐well structures

2011 · B. Galler, A. Laubsch, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 23

Recent Results on Beryllium Chalcogenides

1997 · G. Landwehr, F. Fischer, et al. · physica status solidi (b) · 22

Works count: 87

Citation count: 2,132

H-index: 23

I10-index: 47