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I-Hsieh Wong

Observed name: I.-H. Wong
Observed institution: National Taiwan University
ORCID: 0000-0002-4625-9064
Observed ORCID: 0000-0002-4625-9064
OpenAlex ID: A5086647051
Junctionless Gate-All-Around pFETs Using In-situ Boron-Doped Ge Channel on Si
2015 · I-Hsieh Wong, Yen-Ting Chen, et al. · IEEE Transactions on Nanotechnology · 32
Fabrication and Low Temperature Characterization of Ge (110) and (100) p-MOSFETs
2014 · I-Hsieh Wong, Yen-Ting Chen, et al. · IEEE Transactions on Electron Devices · 21
Interfacial layer reduction and high permittivity tetragonal ZrO2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness
2013 · Cheng-Ming Lin, Hung-Chih Chang, et al. · Applied Physics Letters · 17
Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs
2016 · Yu-Shiang Huang, Chih-Hsiung Huang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13
Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ∼43, ∼2×10−3 A/cm2 gate leakage, SS =85 mV/dec, Ion/Ioff =6×105, and high strain response
2012 · Cheng-Ming Lin, Hung-Chih Chang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 10
In-situ doped and tensily stained ge junctionless gate-all-around nFETs on SOI featuring Ion = 828 µA/µm, Ion/Ioff ∼ 1×105, DIBL= 16–54 mV/V, and 1.4X external strain enhancement
2014 · I-Hsieh Wong, Yen-Ting Chen, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8
Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing With Device Applications
2018 · Fang-Liang Lu, Chung-En Tsai, et al. · IEEE Transactions on Electron Devices · 4
Radiation Impact of EUV on High-Performance Ge MOSFETs
2013 · Yen-Ting Chen, Hung-Chih Chang, et al. · IEEE Electron Device Letters · 4
High performance Ge junctionless gate-all-around NFETs with simultaneous Ion =1235 μA/μm at Vov=Vds=1V, SS=95 mV/dec, high Ion/Ioff=2×106, and reduced noise power density using S/D dopant recovery by selective laser annealing
2016 · I-Hsieh Wong, Fang-Liang Lu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 2
Junctionless Gate-all-around pFETs on Si with In-situ doped Ge channel
2015 · I-Hsieh Wong, Yen-Ting Chen, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 2
Mobility calculation of Ge nanowire junctionless NFETs with size and geometry dependence
2018 · Hung-Yu Ye, Chia-Che Chung, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 1
(Invited) Epitaxial Ge/GeSn High Mobility Channel Transistors
2017 · C. W. Liu, I-Hsieh Wong, et al. · ECS Meeting Abstracts · 1
Ge gate-all-around FETs on Si
2014 · C. W. Liu, I-Hsieh Wong, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 1
Strained Ge0.91Sn0.09 Quantum Well p-MOSFETs
2016 · Yu-Shiang Huang, Chih-Hao Huang, et al. · IEEE Silicon Nanoelectronics Workshop
Advanced germanium channel transistors (invited)
2015 · C. W. Liu, I.-H. Wong, et al. · IEEE International Conference on ASIC (ASICON)
Mobility strain response and low temperature characterization of Ge p-MOSFETs
2013 · I-Hsieh Wong, Yen-Ting Chen, et al. · Conference digest
Works count: 16
Citation count: 116
H-index: 6
I10-index: 5
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