1987 · M. Servidori, P. Zaumseil, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 17

Three-Dimensional Monte Carlo Simulations--Part II: Recoil Phenomena

1985 · A.M. Mazzone · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 15

On the diffusion current in heavily doped semiconductors

1975 · G. Baccarani, A.M. Mazzone · Solid-State Electronics · 13

Comparison of experimental and theoretical carrier concentrations in heavily doped n-type silicon

1976 · M. Finetti, A. M. Mazzone, et al. · Journal of Applied Physics · 12

Boron impurities on a vicinal Si(100) surface: A study of structural properties and binding energies

2002 · A. M. Mazzone · Philosophical Magazine Letters · 11

Monte Carlo simulation of two-dimensional distributions of implanted ions in a crystalline silicon target

1988 · A.M. Mazzone · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 11

Molecular dynamics simulation of the damage formed in silicon at energies near threshold

1988 · A.M. Mazzone · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 11

On anomalous channelling effects in ion-implanted silicon

1987 · A. M. Mazzone · Philosophical Magazine Letters · 9

Impurity effects on conduction in heavily doped n-type silicon

1977 · M. Finetti, A. M. Mazzone · Journal of Applied Physics · 9

Bond hybridization and structural properties of clusters of group-IV elements

1997 · A. M. Mazzone · Physical review. B, Condensed matter · 8

Properties of clustered interstitials in ion-implanted silicon: Comparison between a Monte Carlo simulation and x-ray diffraction measurements

1988 · A. M. Mazzone, M. Servidori · Philosophical Magazine Letters · 8

Transferred-electron oscillators at very high frequencies

1981 · A.M. Mazzone, H.D. Rees · Electronics Letters · 8

Defects in irradiated metallic (Au and Ag) and semiconducting (Si) targets simulated by molecular dynamics

1994 · A. M. Mazzone · Philosophical Magazine Letters · 7

Molecular Dynamics Simulations of Low Energy Displacement Cascades in Silicon.

1988 · A. M. Mazzone · MRS Proceedings · 7

Channeling in GaAs. A Monte Carlo Simulation of low Energy Implants

1986 · F. Garofalo, A. M. Mazzone · physica status solidi (a) · 7

Temperature dependent conductivity of closely compensated phosphorus-doped silicon

1977 · M. Finetti, A. M. Mazzone, et al. · Philosophical magazine · 7

Characterization of Lattice Damage in Ion Implanted Silicon: Monte Carlo Simulation Combined with Double Crystal X-Ray Diffraction

1985 · F. Cembali, A. M. Mazzone, et al. · physica status solidi (a) · 6

Works count: 120

Citation count: 646

H-index: 12

I10-index: 15