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R. M. Huang
Observed names:
Huang Ru,
R. Huang,
Reng-Ping Huang,
Ruirui Huang
Institution:
Jiangnan University
Observed institutions:
Jiangnan University,
Peking University,
Sichuan University,
United Microelectronics (Taiwan),
United Microelectronics (United States)
ORCID:
0009-0005-0246-2588
Observed ORCID:
0009-0005-0246-2588
OpenAlex ID:
A5089034237
Risk Reliability Assessment of Transmission Lines under Multiple Natural Disasters in Modern Power Systems
2023
·
Rongquan Fan
, Wenhui Zeng
, et al.
·
Energies
·
26
PDF
The understanding of multi-level RTN in trigate MOSFETs through the 2D profiling of traps and its impact on SRAM performance: A new failure mechanism found
2012
·
E. R. Hsieh
, Y. L. Tsai
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
18
The understanding of the trap induced variation in bulk tri-gate devices by a novel random trap profiling (RTP) technique
2012
·
H. M. Tsai
, E. R. Hsieh
, et al.
·
Symposium on VLSI Technology
·
13
New observations on the physical mechanism of Vth-variation in nanoscale CMOS devices after long term stress
2011
·
E. R. Hsieh
, Steve S. Chung
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
13
A single device based voltage step stress (VSS) technique for fast reliability screening
2014
·
Z. Ji
, J. F. Zhang
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
12
PDF
Whole Life Cycle Cost Analysis of Transmission Lines Using the Economic Life Interval Method
2023
·
Wenhui Zeng
, Jiayuan Fan
, et al.
·
Energies
·
8
PDF
Reliability service-based strategies for improving electricity retailer competitiveness using a novel heuristic algorithm
2023
·
Jichun Liu
, Ruirui Huang
, et al.
·
Journal of Cleaner Production
·
7
Characteristics of HfZrOx gate stack engineering for reliability improvement on 28nm HK/MG CMOS technology
2012
·
C. H. Tsai
, C. W. Yang
, et al.
·
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
·
5
A novel and direct experimental observation of the discrete dopant effect in ultra-scaled CMOS devices
2011
·
E. R. Hsieh
, Steve S. Chung
, et al.
·
Symposium on VLSI Technology
·
5
Segmented tri-gate bulk CMOS technology for device variability improvement
2010
·
C. H. Tsai
, T.-J. King Liu
, et al.
·
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
·
4
Optimizing Floating Body Effect & AC performance in 65nm PD-SOI CMOS
2007
·
R. M. Huang
, T. F. Chen
, et al.
·
IEEE International SOI Conference (SOI)
·
4
A circuit level variability prediction of basic logic gates in advanced trigate CMOS technology
2014
·
E. R. Hsieh
, C. M. Hung
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
3
Gate current variation: A new theory and practice on investigating the off-state leakage of trigate MOSFETs and the power dissipation of SRAM
2013
·
E. R. Hsieh
, S. T. Lin
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
3
Tradeoff between speed and static power dissipation of ultra-thin body SOI MOSFETs
2007
·
Tian Yu
, Huang Ru
, et al.
·
Chinese Physics
·
3
The impact of the carrier transport on the random dopant induced drain current variation in the saturation regime of advanced strained-silicon CMOS devices
2012
·
E. R. Hsieh
, Steve S. Chung
, et al.
·
IEEE Silicon Nanoelectronics Workshop
·
1
Performance Improvement of the Capacitorless DRAM Cell with Quasi-SOI Structure Based on Bulk Substrate
2009
·
D. Wu
, R. Huang
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
1
Dopant and thermal interaction on SPE formed SiC for NMOS performance enhancement
2009
·
P. W. Liu
, T. F. Kuo
, et al.
·
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
·
1
Thermal budget optimization on Strained Silicon-On-Insulator (SSOI) CMOS
2008
·
R. M. Huang
, Y. H. Lin
, et al.
·
IEEE International Power Modulator Symposium and High-Voltage Workshop (IPMHVC)
·
1
Miniaturized Low Power Microwave Rectifier
2024
·
Yi-Hui Zhou
, Yang Li
, et al.
·
IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
Geometric variation: A novel approach to examine the surface roughness and the line roughness effects in trigate FinFETs
2017
·
E. R. Hsieh
, Y. C. Fan
, et al.
·
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
The Experimental Observation of Soft-Error Enhanced NBTI Degradation in Trigate FinFETs for the near-Cosmic Exploration of Drones
2016
·
E. Hsieh
, C. Wu
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Determination of specific contact resistance of Ge 2 Sb 2 Te 5 phase change materials by spacer etched nanowires
2013
·
R. M. Huang
, R. Chen
, et al.
The understanding of the bulk trigate MOSFET's reliability through the manipulation of RTN traps
2013
·
E. R. Hsieh
, P. C. Wu
, et al.
·
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
A Novel and Direct Measurement of the Mobility on Very Small Dimension CMOS Devices with Channel Length Down to 20nm
2012
·
E. R. Hsieh
, S. Chung
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
The Experimental Observation of the Process Induced Random Dopant Effect in Trigate MOSFETs
2012
·
E. R. Hsieh
, H. M. Tsai
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
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Works count:
33
Citation count:
128
H-index:
7
I10-index:
5
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