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Tomomasa Ueda

Observed names: T. Ueda, Tomomasa UEDA
OpenAlex ID: A5102376701
Highly reliable a‐IGZO TFTs on a plastic substrate for flexible AMOLED displays
2012 · Shintaro Nakano, Nobuyoshi Saito, et al. · Journal of the Society for Information Display · 85
74.2L: Late‐News Paper : 11.7‐inch Flexible AMOLED Display Driven by a‐IGZO TFTs on Plastic Substrate
2012 · Hajime Yamaguchi, Tomomasa Ueda, et al. · SID Symposium Digest of Technical Papers · 80
Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
2020 · Hirokazu Fujiwara, Yuta Sato, et al. · IEEE Transactions on Electron Devices · 73
Effect of Self-Heating on Time-Dependent Dielectric Breakdown in Ultrathin MgO Magnetic Tunnel Junctions for Spin Torque Transfer Switching Magnetic Random Access Memory
2010 · Keiji Hosotani, Makoto Nagamine, et al. · Japanese Journal of Applied Physics · 34
High-Mobility and H2-Anneal Tolerant InGaSiO/InGaZnO/InGaSiO Double Hetero Channel Thin Film Transistor for Si-LSI Compatible Process
2018 · Nobuyoshi Saito, Kentaro Miura, et al. · IEEE Journal of the Electron Devices Society · 25
4.1: Low‐Temperature‐Processed IGZO TFTs for Flexible AMOLED with Integrated Gate Driver Circuits
2011 · Kentaro Miura, Tomomasa Ueda, et al. · SID Symposium Digest of Technical Papers · 23
Surrounding Gate Vertical-Channel FET with Gate Length of 40 nm using BEOL Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
2020 · Hirokazu Fujiwara, Yuta Sato, et al. · Symposium on VLSI Technology · 21
70.1L: Late‐News Paper : 10.2‐inch WUXGA Flexible AMOLED Display Driven by Amorphous Oxide TFTs on Plastic Substrate
2013 · Nobuyoshi Saito, Tomomasa Ueda, et al. · SID Symposium Digest of Technical Papers · 21
High mobility (>30 cm 2 V −1 s −1 ) and low source/drain parasitic resistance In–Zn–O BEOL transistor with ultralow <10−20 A μ m −1 off-state leakage current
2019 · Nobuyoshi Saito, Tomoaki Sawabe, et al. · Japanese Journal of Applied Physics · 15
Estimation of spin transfer torque effect and thermal activation effect on magnetization reversal in CoFeB∕MgO∕CoFeB magnetoresistive tunneling junctions
2007 · Masatoshi Yoshikawa, Tomomasa Ueda, et al. · Journal of Applied Physics · 15
Origin of High Mobility in InSnZnO MOSFETs
2018 · Nobuyoshi Saito, Tomomasa Ueda, et al. · IEEE Journal of the Electron Devices Society · 14
High thermal stability of doped oxide semiconductor for monolithic 3D integration
2021 · Hiroki Kawai, Junji Kataoka, et al. · MRS Bulletin · 10
Tungsten/In–Sn–O stacked source/drain electrode structure of In–Ga–Zn–O thin-film transistor for low-contact resistance and suppressing channel shortening effect
2019 · Junji Kataoka, Nobuyoshi Saito, et al. · Japanese Journal of Applied Physics · 9
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Temperature dependence of tunnel resistance for CoFeB∕MgO∕CoFeB magnetoresistive tunneling junctions: The role of magnon
2007 · Sumio Ikegawa, Hisanori Aikawa, et al. · Journal of Applied Physics · 8
Effect of Interface Buffer Layer on the Reliability of Ultra-Thin MgO Magnetic Tunnel Junctions for Spin Transfer Switching MRAM
2007 · Keiji Hosotani, Yoshiaki Asao, et al. · IEEE International Reliability Physics Symposium proceedings · 8
Preparation of Pb(Zr, Ti)O3 Thin Films on Glass Substrates
2000 · Tsuyoshi Hioki, Masahiko Akiyama, et al. · Japanese Journal of Applied Physics · 8
Preparation of Pb(Zr, Ti)O3 Thin Films by Plasma-Assisted Sputtering
1999 · Tsuyoshi Hioki, Masahiko Akiyama, et al. · Japanese Journal of Applied Physics · 7
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Highly stackable Oxide-semiconductor Channel Transistor Technology for Future High-density and Low-power 3D DRAM
2025 · Mutsumi Okajima, Takamitsu Ochi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6
Source/Drain Contact Engineering of InGaZnO Channel BEOL Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect
2021 · Yuta Sato, Hirokazu Fujiwara, et al. · International Workshop on Junction Technology · 6
Flexible AMOLED display driven by amorphous InGaZnO TFTs
2013 · Kentaro Miura, Tomomasa Ueda, et al. · International Workshop on Active-Matrix Flatpanel Displays and Devices · 5
A Low‐Power, Image‐Memory LCD using Ferroelectric Film with Gray‐Scale Capability
1999 · Masahiko Akiyama, Yutaka Onozuka, et al. · SID Symposium Digest of Technical Papers · 3
High mobility (>30 cm2/Vs) and Low S/D Parasitic Resistance In-Zn-O BEOL Transistor with Ultralow (<10-20 A/um) Off Leakage Current
2018 · N. Saito, T. Sawabe, et al. · International Conference on Solid State Devices and Materials (SSDM) · 2
Effect of Interface Buffer Layer on the Reliability of Ultra-thin Mgo Magnetic Tunnel Junctions
2007 · K. Hosotani, Yoshiaki Asao, et al. · 2
Suppression of Channel Shortening and Reduction of S/D Parasitic Resistance in InGaZnO channel BEOL Transistor by Insertion of thermally stable InAlZnO Contact Layer
2020 · Yuta Sato, Hirokazu Fujiwara, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
High-mobility and H2-anneal tolerant InGaSiO/InGaZnO/InGaSiO double hetero channel thin film transistor for Si-LSI compatible process
2017 · Nobuyoshi Saito, Kentaro Miura, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 1
Works count: 47
Citation count: 483
H-index: 11
I10-index: 12
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