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Paolo Cappelletti

Observed names: Cappelletti, Paolo, P Cappelletti, P. CAPPELLETTI, P. Cappelletti
ORCID: 0000-0002-5889-3046
Observed ORCID: 0000-0002-5889-3046
OpenAlex ID: A5102838365
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
2004 · F. Pellizzer, A. Pirovano, et al. · Symposium on VLSI Technology · 199
Phase change memory for automotive grade embedded NVM applications
2020 · Paolo Cappelletti, Roberto Annunziata, et al. · Journal of Physics D Applied Physics · 122
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Truly Innovative 28nm FDSOI Technology for Automotive Micro-Controller Applications embedding 16MB Phase Change Memory
2018 · F. Arnaud, P. Zuliani, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 95
Non volatile memory evolution and revolution
2015 · Paolo Cappelletti · Technical digest - International Electron Devices Meeting/Technical digest · 95
Failure mechanisms of flash cell in program/erase cycling
2002 · P. Cappelletti, R. Bez, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 81
Multilevel flash cells and their trade-offs
2002 · B. Eitan, R. Kazerounian, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 60
Flash Memory Reliability
1999 · Paolo Cappelletti, Alberto Modelli · Springer eBooks · 57
High Density Embedded PCM Cell in 28nm FDSOI Technology for Automotive Micro-Controller Applications
2020 · F. Arnaud, P. Ferreira, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 54
Experimental transient analysis of the tunnel current in EEPROM cells
1990 · R. Bez, D. Cantarelli, et al. · IEEE Transactions on Electron Devices · 48
A new and flexible scheme for hot-electron programming of nonvolatile memory cells
1999 · D. Esseni, A. Della Strada, et al. · IEEE Transactions on Electron Devices · 39
Cast: An electrical stress test to monitor single bit failures in flash-EEPROM structures
1997 · P. Cappelletti, R. Bez, et al. · Microelectronics Reliability · 38
Photoluminescence of CdIn2S4 single crystals recombination process and localized levels
1980 · E. Grilli, M. Guzzi, et al. · physica status solidi (a) · 31
Current crowding and misalignment effects as sources of error in contact resistivity measurements—Part I: Computer simulation of conventional CER and CKR structures
1987 · A. Scorzoni, M. Finetti, et al. · IEEE Transactions on Electron Devices · 30
Impurity effects in molybdenum silicide formation
1982 · F. Nava, G. Majni, et al. · Thin Solid Films · 28
Flash memory reliability
1998 · P Cappelletti · Microelectronics Reliability · 23
Flash memory and beyond
2005 · R. Bez, P. Cappelletti · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 22
What we have learned on flash memory reliability in the last ten years
2005 · P. Cappelletti, R. Bez, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20
Accelerated current test for fast tunnel oxide evaluation (of EPROMs)
2002 · P. Cappelletti, P. Ghezzi, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 19
A correlation between solid solubility and tetrahedral radius of III, IV and V group impurities in silicon
1982 · P. Cappelletti, G. F. Cerofolini, et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 17
Phase Change Memories have taken the field
2013 · Roberto Bez, Paolo Cappelletti, et al. · IEEE International Memory Workshop (IMW) · 16
Impact of atomistic doping and 3D electrostatics on the variability of RTN time constants in flash memories
2011 · A. Mauri, N. Castellani, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16
Current-voltage characteristics of ideal silicon diodes in the range 300–400 K
1985 · P. Cappelletti, G. F. Cerofolini, et al. · Journal of Applied Physics · 16
BEOL Process Effects on ePCM Reliability
2022 · A. Redaelli, A. Gandolfo, et al. · IEEE Journal of the Electron Devices Society · 15
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Embedded PCM macro for automotive-grade microcontroller in 28nm FD-SOI
2019 · F. Disegni, R. Annunziata, et al. · Symposium on VLSI Circuits · 14
A Test Structure for Contact and Via Failure Analysis in Deep-Submicrometer CMOS Technologies
2006 · A. Cabrini, D. Cantarelli, et al. · IEEE Transactions on Semiconductor Manufacturing · 14
Works count: 57
Citation count: 1,308
H-index: 18
I10-index: 29
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