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Author

Steffen Lehmann

Observed names: Lehmann, Steffen, S Lehmann, S. Lehmann
ORCID: 0000-0003-0665-6716
Observed ORCID: 0000-0003-0665-6716
OpenAlex ID: A5102859024
A 22nm FDSOI Technology Optimized for RF/mmWave Applications
2018 · S.N. Ong, S. Lehmann, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 148
A computationally efficient physics-based compact bipolar transistor model for circuit Design-part I: model formulation
2006 · M. Schroter, S. Lehmann, et al. · IEEE Transactions on Electron Devices · 40
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures
2022 · Hung-Chi Han, Farzan Jazaeri, et al. · Solid-State Electronics · 36
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A computationally efficient physics-based compact bipolar transistor model for circuit Design-part II: parameter extraction and experimental results
2006 · S. Fregonese, S. Lehmann, et al. · IEEE Transactions on Electron Devices · 28
Analytical Modeling of Cryogenic Subthreshold Currents in 22-nm FDSOI Technology
2023 · Hung-Chi Han, Zhixing Zhao, et al. · IEEE Electron Device Letters · 23
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Design and Characterization of a Variable Gain D-Band LNA for Optimized Link Budgeting for a 6G Receiver in 22FDX
2023 · Patrick James Artz, Quang Huy Le, et al. · IEEE Transactions on Microwave Theory and Techniques · 20
SiGe HBT modeling for mm-wave circuit design
2015 · Andreas Pawlak, Steffen Lehmann, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 20
Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors
2014 · Steffen Lehmann, Yves Zimmermann, et al. · IEEE Transactions on Electron Devices · 20
In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation
2021 · Hung-Chi Han, Farzan Jazaeri, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 19
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Empirical Large-Signal Modeling of mm-Wave FDSOI CMOS Based on Angelov Model
2021 · Quang Huy Le, Dang Khoa Huynh, et al. · IEEE Transactions on Electron Devices · 18
HICUM/Level0 - a simplified compact bipolar transistor model
2003 · M. Schroter, S. Lehmann, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 18
22FDSOI device towards RF and mmWave applications
2021 · Zhixing Zhao, Steffen Lehmann, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 17
A 22nm FDSOI Technology with integrated 3.3V/5V/6.5V RFLDMOS Devices for IOT SOC applications
2018 · C. Schippel, S. Lehmann, et al. · IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference · 15
Compact Layout and Bias-Dependent Base-Resistance Modeling for Advanced SiGe HBTs
2008 · Michael Schroter, Julia Krause, et al. · IEEE Transactions on Electron Devices · 15
The rectangular bipolar transistor tetrode structure and its application
2007 · M. Schroter, S. Lehmann · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 15
22FDX® fMAX Optimization through Parasitics Reduction and GM Boost
2019 · Zhixing Zhao, Steffen Lehmann, et al. · European Solid-State Device Research Conference · 14
RF-pFET in fully depleted SOI demonstrates 420 GHz FT
2017 · Josef Watts, Kumaran Sundaram, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 13
High-resistivity with PN interface passivation in 22 nm FD-SOI technology for low-loss passives at RF and millimeter-wave frequencies
2023 · L. Nyssens, M. Rack, et al. · Solid-State Electronics · 12
Reliability-Conscious MOSFET Compact Modeling with Focus on the Defect-Screening Effect of Hot-Carrier Injection
2021 · Pratik B. Vyas, Ninad Pimparkar, et al. · IEEE International Reliability Physics Symposium proceedings · 12
W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs
2020 · Q. H. Le, D. K. Huynh, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 12
A simple and accurate method for extracting the emitter and thermal resistance of BJTs and HBTs
2014 · Andreas Pawlak, Steffen Lehmann, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 12
Novel Approach to FDSOI Threshold Voltage Model Validated at Cryogenic Temperatures
2023 · Hung-Chi Han, Zhixing Zhao, et al. · IEEE Access · 11
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Impact of substrate resistivity on spiral inductors at mm-wave frequencies
2022 · Lucas Nyssens, Martin Rack, et al. · Solid-State Electronics · 11
Scalable compact modeling for SiGe HBTs suitable for microwave radar applications
2011 · S Lehmann, M Weiss, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 11
22-nm FDSOI CMOS Noise Modeling and Analysis in mm-Wave Frequency Range
2023 · Quang Huy Le, Dang Khoa Huynh, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 10
Works count: 65
Citation count: 727
H-index: 15
I10-index: 27
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