2001 · W. Qin, Z. Q. Mo, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 14

Analysis of amine contamination on silicon oxide surfaces using ToF-SIMS

2004 · D Lu, Z.-Q Mo, et al. · Applied Surface Science · 10

Effect of plasma process on low-k material and barrier layer performance

2005 · X.T. Chen, D. Gui, et al. · Thin Solid Films · 9

Adhesion and raman studies of magnetron sputtered amorphous carbon on WC–Co

1999 · S. Zhang, H. Xie, et al. · Surface Engineering · 9

Growth of SiCN films by magnetron sputtering

2000 · J. Wei, Y. Gao, et al. · Surface Engineering · 7

Non-Visible Defect Analysis of OTP Device

2011 · C.Q. Chen, G.B. Ang, et al. · Proceedings - International Symposium for Testing and Failure Analysis · 4

SIMS Analysis of Gate Oxide Breakdown Due to Tungsten Contamination

2006 · D. Gui, Z.X. Xing, et al. · IEEE International Conference on Semiconductor Electronics · 4

Low Temperature Anodic Bonding for MEMS Applications

2002 · J. Wei, Z. P. Wang, et al. · ASME International Mechanical Engineering Congress and Exposition (IMECE) · 4

SIMS Analysis of Ultra-Shallow Boron Implant

2021 · Han Wei Teo, Y. Wang, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 3

Physical characterization and sample preparation for MEMS devices

2016 · S. Lee, P. C. Ang, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 3

Enhanced passivation integrity test for improved passivation failure detection

2015 · S. Lee, P. C. Ang, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 3

Depth profiling of ultra-thin oxynitride gate dielectrics by using MCs2+ technique

2008 · D. Gui, Z.Q. Mo, et al. · Applied Surface Science · 3

Interfacial characterization of ultra low-k film (kappa=2.55) with time of flight secondary ion mass spectrometry (TOF-SIMS)

2008 · J. Widodo, Z. X. Xing, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 2

Reduction of FIB induced damage in silicon with Argon sputter clean

2022 · K. H. Yip, P. C. Ang, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 1

TOF-SIMS analysis for surface contaminant on dielectric anti-reflective coating

2017 · Han Wei Teo, Y. Wang, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 1

Gate oxide integrity failure caused by molybdenum contamination introduced in the ion implantation

2008 · D. Gui, Y.H. Huang, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 1

Studies on Fingerprints of EDX, FTIR, XPS and TOF-SIMS Techniques and Applications in Failure Analysis of Wafer Fabrication

2004 · Hua Younan, Lo Keng Foo, et al. · Proceedings - International Symposium for Testing and Failure Analysis · 1

Application of Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy Analysis in Failure Analysis of Wafer Fabrication

2001 · H. Y. CHEN, Z. Q. MO, et al. · Surface Review and Letters · 1

Application of ICP-MS to identify the source of Metallic Contamination

2024 · S.P. Neo, W.T. Yeo, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Works count: 34

Citation count: 359

H-index: 9

I10-index: 8