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Toru Kanazawa

Observed names: Kanazawa, Toru, T. Kanazawa, Toru KANAZAWA, kanazawa Toru
ORCID: 0000-0002-0808-7062
Observed ORCID: 0000-0002-0808-7062
OpenAlex ID: A5103267865
High drain current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with shrinkage of channel length by InP anisotropic etching
2011 · Yoshiharu Yonai, Toru Kanazawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 42
InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al2O3Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/µm
2011 · Ryousuke Terao, Toru Kanazawa, et al. · Applied Physics Express · 34
Metamaterial Waveguide Devices for Integrated Optics
2017 · Tomohiro Amemiya, Toru Kanazawa, et al. · Materials · 29
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Permeability-controlled optical modulator with Tri-gate metamaterial: control of permeability on InP-based photonic integration platform
2015 · Tomohiro Amemiya, Atsushi Ishikawa, et al. · Scientific Reports · 22
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Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2
2017 · Toru Kanazawa, Tomohiro Amemiya, et al. · IEEE Transactions on Nanotechnology · 21
Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source
2010 · Toru Kanazawa, Kazuya Wakabayashi, et al. · Applied Physics Express · 16
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Erratum: “InP/InGaAs Composite Metal–Oxide–Semiconductor Field-Effect Transistors with Regrown Source and Al$_{2}$O$_{3}$ Gate Dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/$\mu$m”
2011 · Ryousuke Terao, Toru Kanazawa, et al. · Applied Physics Express · 13
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Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunneling FET by UV-O3 treatment
2019 · Wenlun Zhang, Toru Kanazawa, et al. · Applied Physics Express · 11
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Effect of increasing gate capacitance on the performance of a p-MoS 2 /HfS 2 van der Waals heterostructure tunneling field-effect transistor
2019 · Wenlun Zhang, Seiko Netsu, et al. · Japanese Journal of Applied Physics · 11
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Optical Lattice Model Toward Nonreciprocal Invisibility Cloaking
2015 · Tomohiro Amemiya, Masato Taki, et al. · IEEE Journal of Quantum Electronics · 11
Organic membrane photonic integrated circuits (OMPICs)
2017 · Tomohiro Amemiya, Toru Kanazawa, et al. · Optics Express · 9
Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation
2017 · Vikrant UPADHYAYA, Toru KANAZAWA, et al. · IEICE Transactions on Electronics · 9
Sub-50-nm InGaAs MOSFET with n-InP source on Si substrate
2013 · Atsushi Kato, Toru Kanazawa, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 9
Type-II HfS2/MoS2 Heterojunction Transistors
2018 · Seiko NETSU, Toru KANAZAWA, et al. · IEICE Transactions on Electronics · 8
InGaAs tri-gate MOSFETs with MOVPE regrown source/drain
2014 · Yuichi Mishima, Toru Kanazawa, et al. · Conference digest · 6
Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain
2016 · Nobukazu Kise, Haruki Kinoshita, et al. · Solid-State Electronics · 5
Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain
2016 · H. Kinoshita, N. Kise, et al. · Compound Semiconductor Week (CSW) · 5
Fabrication of thin-film HfS2 FET
2015 · T. Kanazawa, T. Amemiya, et al. · Conference digest · 5
Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique
2015 · Ryota Yamanaka, Toru Kanazawa, et al. · Japanese Journal of Applied Physics · 5
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Regrown source/drain in InGaAs multi-gate MOSFETs
2019 · Yasuyuki Miyamoto, Toru Kanazawa, et al. · Journal of Crystal Growth · 4
Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density
2014 · Kazuto Ohsawa, Atsushi Kato, et al. · IEICE Electronics Express · 3
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Metafilm: Metamaterial Array Embedded in Organic Thin Film
2016 · Tomohiro Amemiya, Toru Kanazawa, et al. · Conference on Lasers and Electro-Optics · 2
Submicron InP/InGaAs composite channel MOSFETs with selectively regrown N+-source/drain buried in channel undercut
2010 · Toru Kanazawa, Kazuya Wakabayashi, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 2
Improved Current Drivability in Normally-Off IGZO TFTs with Low-Level Nitrogen Doping
2026 · Toru Kanazawa, Masahisa Watanabe, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM) · 1
Infrared Invisibility Cloak Using Rolled Metamaterial Film
2018 · Tomohiro Amemiya, Satoshi Yamasaki, et al. · Conference on Lasers and Electro-Optics · 1
Works count: 232
Citation count: 291
H-index: 10
I10-index: 10
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