Author

Alain A. Bensoussan

Observed names: A. BENSOUSSAN, A. Bensoussan, Alain Bensoussan, Bensoussan, Alain

Observed institutions: Centre National de la Recherche Scientifique, Laboratoire d'Analyse et d'Architecture des Systèmes, IRT Saint Exupéry, Thales Alenia Space (France)

ORCID: 0000-0003-0743-498X

Observed ORCID: 0000-0003-0743-498X

OpenAlex ID: A5107140140

TCAD Simulation of the Single Event Effects in Normally-off GaN Transistors after Heavy Ion Radiation

2017 · M. Zerarka, P. Austin, et al. · IEEE Transactions on Nuclear Science · 84

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Reliability prediction with MTOL

2016 · Joseph B. Bernstein, Alain Bensoussan, et al. · Microelectronics Reliability · 33

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Temperature and voltage effects on HTRB and HTGB stresses for AlGaN/GaN HEMTs

2018 · Omar Chihani, Loic Theolier, et al. · IEEE International Reliability Physics Symposium proceedings · 23

Reliability Prediction for Microelectronics

2024 · Joseph B. Bernstein, Alain A. Bensoussan, et al. · Wiley eBooks · 15

TCAD simulation of the single event effects in normally-off GaN transistors after heavy ion radiation

2016 · M. Zerarka, P. Austin, et al. · European Conference on Radiation and Its Effects on Components and Systems · 15

A New Methodology for EMC Prediction of Integrated Circuits After Aging

2018 · Chaimae Ghfiri, Alexandre Boyer, et al. · IEEE Transactions on Electromagnetic Compatibility · 14

Degradation indicators of power-GaN-HEMT under switching power-cycling

2019 · M.A. González-Sentís, P. Tounsi, et al. · Microelectronics Reliability · 12

Effect of HTRB lifetest on AlGaN/GaN HEMTs under different voltages and temperatures stresses

2018 · Omar Chihani, Loic Theolier, et al. · Microelectronics Reliability · 11

A unified multiple stress reliability model for microelectronic devices — Application to 1.55 μm DFB laser diode module for space validation

2015 · A. Bensoussan, E. Suhir, et al. · Microelectronics Reliability · 10

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Simulation and modelling of long term reliability of digital circuits implemented in FPGA

2018 · J.D. Aguirre Morales, F. Marc, et al. · Microelectronics Reliability · 6

GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing

2013 · A. Bensoussan, R. Marec, et al. · Microelectronics Reliability · 6

A methodologic project to characterize and model COTS component reliability

2015 · A. Durier, A. Bensoussan, et al. · Microelectronics Reliability · 5

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Space validation of 1550nm DFB laser diode module

2019 · Philip Henderson, Adrian Norman, et al. · International Conference on Space Optics (ICSO) · 4

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Impact of aging on the soft error rate of 6T SRAM for planar and bulk technologies

2017 · T. Rousselin, G. Hubert, et al. · Microelectronics Reliability · 4

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Stress dependent degradation mechanisms on commercially available GaN Normally-Off transistors

2019 · A. Bensoussan, O. Perrotin, et al. · Microelectronics Reliability · 2

Synopsis of Multiphysics Deep Sub-Micron Failure Rate Modeling Technique for CFR and EOL Prediction

2018 · Mark Musil, Alain Bensoussan, et al. · IEEE Nanotechnology Materials and Devices Conference (NMDC) · 2

Hole and electron traps in AlGaAs single and double heterojunction red light-emitting diodes

1990 · F. SANDOVAL, J. M. HERRERO, et al. · International Journal of Electronics · 2

Conventional Electronic System Reliability Prediction

2024 · Joseph B. Bernstein, Alain A. Bensoussan, et al. · Wiley eBooks · 1

Drift Effects and Trap Analysis of Power-GaN-HEMT Under Switching Power Cycling

2019 · Manuel A. González-Sentís, Patrick Tounsi, et al. · Smart innovation, systems and technologies · 1

Multi-Mechanism Wearout Reliability Prediction for Long-Lifetime Optical FBGs SHM system

2026 · DFinder, Alain Bensoussan, et al. · e-Journal of Nondestructive Testing

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Index