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S. M. Hogg

Observed names: S Hogg, S. Hogg, S.M Hogg, S.M. Hogg
Institution: KU Leuven
OpenAlex ID: A5108402923
Elastic strain in In0.18Ga0.82N layer: A combined x-ray diffraction and Rutherford backscattering/channeling study
1999 · M. F. Wu, A. Vantomme, et al. · Applied Physics Letters · 41
Suppression of rare-earth implantation-induced damage in GaN
2001 · A Vantomme, S.M Hogg, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 29
Influence of the implantation angle on the generation of defects for Er implanted GaN
2003 · B. Pipeleers, S.M. Hogg, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 18
Channeling of low energy heavy ions: Er in Si〈111〉
2002 · S. M. Hogg, B. Pipeleers, et al. · Applied Physics Letters · 17
Strain in AlGaN layer studied by Rutherford backscattering/channeling and x-ray diffraction
1999 · M. F. Wu, Shude Yao, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 15
Elastic strain in InGaN and AlGaN layers
2000 · M.F. Wu, Shude Yao, et al. · Materials Science and Engineering B · 13
Top contacts for vertical double-gate MOSFETs
2002 · J Moers, St Trellenkamp, et al. · Microelectronic Engineering · 11
Rutherford backscattering/channeling study of a thin AlGaN layer on Al2O3(0 0 0 1)
2001 · M.F. Wu, A. Vantomme, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 11
Growth and electrical characterization of GdSi1.7 epilayers formed by channeled ion beam synthesis
2002 · S. M. Hogg, A. Vantomme, et al. · Journal of Applied Physics · 10
Channeled ion beam synthesis of heteroepitaxial Nd0.32Y0.68Si1.7 layers
1998 · M. F. Wu, A. Vantomme, et al. · Applied Physics Letters · 10
Electrical properties of rare earth silicides produced by channeled ion beam synthesis
2000 · S.M Hogg, A Vantomme, et al. · Microelectronic Engineering · 8
Structural study of YSi1.7 layers formed by channeled ion beam synthesis
1998 · M. F. Wu, Shude Yao, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 8
Stabilisation and phase transformation of hexagonal rare-earth silicides on Si(111)
1999 · A Vantomme, M.F Wu, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 7
Growth of high-quality buried Y- and (Y, Nd)-silicide layers prepared by channelled ion implantation
1998 · S. Jin, H. Bender, et al. · Journal of Crystal Growth · 3
Temperature and angular effects on the channelled implantation of Er into 〈111〉
2001 · S.M Hogg, A Vantomme, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2
Epitaxial ternary Er0.5Y0.5Si1.7 silicide layers formed by channeled ion beam synthesis
1999 · S.M Hogg, A Vantomme, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2
Backscattering/channeling study of high-dose rare-earth implants into Si
1998 · A. Vantomme, U. Wahl, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2
Solid-phase epitaxial growth of AlxGa1−xAs alloys as a function of Al content
1997 · S. M. Hogg, D. J. Llewellyn, et al. · Applied Physics Letters · 2
Dose-dependent precipitate evolution arising during implantation of Er into Si
2005 · S. M. Hogg, B. Pipeleers, et al. · Journal of Applied Physics · 1
Diffusion and defect formation in ion implanted Si nanostructures
2002 · S.M. Hogg, P. Kluth, et al. · International Conference on Ion Implantation Technology · 1
Heteroepitaxial Er0.49Gd0.51Si1.7 layers formed by channeled ion beam synthesis
1998 · M.F Wu, Shude Yao, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1
Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis
1998 · M. F. Wu, A. Vantomne, et al. · MRS Proceedings · 1
Solid-phase epitaxy of Al/sub x/Ga/sub (1-x/)As: kinetics as a function of composition
2002 · S.M. Hogg, D.J. Llewellyn, et al. · Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)
Solid-phase epitaxial crystallization of a B-delta-doped superlattice in Si
2002 · R.G. Elliman, S.M. Hogg, et al. · International Conference on Ion Implantation Technology
Comparative study of structural properties and photoluminescence in InGaN layers with a high In content
2000 · A. Vantomme, M.F. Wu, et al. · MRS Internet Journal of Nitride Semiconductor Research
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Works count: 27
Citation count: 213
H-index: 10
I10-index: 10
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