2001 · Th. Lill, M. Grimbergen, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 21

Generating sub-30-nm polysilicon gates using PECVD amorphous carbon as hardmask and anti-reflective coating

2003 · Wei Liu, David Mui, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 20

A new circuit model for tunneling related trapping at insulator-semiconductor interfaces in accumulation

1992 · D. S. L. Mui, J. Reed, et al. · Journal of Applied Physics · 20

Low regrowth–interface recombination rates in InGaAs–GaAs buried ridge lasers fabricated by in situ processing

1995 · T. A. Strand, B. J. Thibeault, et al. · Applied Physics Letters · 19

Gate quality Si3N4/Si/n-In0.53Ga0.47As metal-insulator-semiconductor capacitors

1992 · Z. Wang, D. S. L. Mui, et al. · Applied Physics Letters · 19

Wafer Surface Charging Model for Single-Wafer Wet-Spin Processes

2011 · David S. L. Mui, Eric Howard Lenz, et al. · IEEE Transactions on Semiconductor Manufacturing · 17

Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors with improved stability

1993 · D. S. L. Mui, Z. Wang, et al. · Applied Physics Letters · 17

Mobility degradation and transferred electron effect in gallium arsenide and indium gallium arsenide

1987 · V.K. Arora, D.S.L. Mui, et al. · IEEE Transactions on Electron Devices · 13

Devices for phase-alternated decoupling in liquids, liquid crystals, and solids

1985 · David S.L Mui, B.M Fung, et al. · Journal of Magnetic Resonance (1969) · 13

Enhanced particle removal using viscoelastic fluids

2013 · Travis W. Walker, Tienyi T. Hsu, et al. · Journal of Rheology · 12

${\rm SiO}_{2}$ Etching With Aqueous HF: Design and Development of a Laboratory-Scale Integrated Wet Etch/Dry Reactor

2010 · Ashish A. Pande, David S. L. Mui, et al. · IEEE Transactions on Semiconductor Manufacturing · 11

Line-profile and critical dimension measurements using a normal incidence optical metrology system

2002 · Weidong Yang, R. Lowe-Webb, et al. · ASMC proceedings · 11

Optimal thickness for Si interlayer as diffusion barrier at the Si3N4/GaAs interface: A transmission electron microscopy study

1995 · T. Zheng, J.M. Gibson, et al. · Journal of materials research/Pratt's guide to venture capital sources · 11

Mobility degradation in a quantum well heterostructure of a GaAs/AlGaAs prototype

1987 · Vijay K. Arora, David S. L. Mui, et al. · Applied Physics Letters · 11

Works count: 83

Citation count: 1,003

H-index: 17

I10-index: 25