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Genji Nakamura
Observed names:
G Nakamura,
G. Nakamura,
Gen Washidzu Nakamura
Institution:
Tokyo Electron (Japan)
Observed institutions:
Tokyo Electron (Japan),
Hosei University,
Center for Nanoscale Science and Technology,
Semiconductor Leading Edge Technologies, Inc (Japan)
OpenAlex ID:
A5108627031
Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning
2006
·
Yasushi Akasaka
, Genji Nakamura
, et al.
·
Japanese Journal of Applied Physics
·
106
Properties of Titanium Nitride Films for Barrier Metal in Aluminum Ohmic Contact Systems
1991
·
Tohru Hara
, Akira Yamanoue
, et al.
·
Japanese Journal of Applied Physics
·
43
ETB-QW InAs MOSFET with scaled body for improved electrostatics
2012
·
T.-W. Kim
, D.-H Kim
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
27
Evaluation of high thermal stability cyclopentadienyl Hf precursors with H2O as a co-reactant for advanced gate logic applications
2011
·
Steven Consiglio
, Robert D. Clark
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
21
Effective Schottky Barrier Height modulation using dielectric dipoles for source/drain specific contact resistivity improvement
2012
·
K.-W. Ang
, K. Majumdar
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
17
Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces - guiding principles for gate metal selection
2005
·
K. Shiraishi
, P. Ahmet
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
17
Impact of cyclic plasma treatment on oxygen vacancy defects in TiN/HfZrO/SiON/Si gate stacks
2015
·
Md Nasir Uddin Bhuyian
, S. Poddar
, et al.
·
Applied Physics Letters
·
16
Physical and Electrical Effects of the Dep-Anneal-Dep-Anneal (DADA) Process for HfO2 in High K/Metal Gate Stacks
2011
·
Robert D. Clark
, Shintaro Aoyama
, et al.
·
ECS Transactions
·
16
PDF
Statistical demonstration of silicide-like uniform and ultra-low specific contact resistivity using a metal/high-k/Si stack in a sidewall contact test structure
2014
·
K. Majumdar
, R. Clark
, et al.
·
Symposium on VLSI Technology
·
11
Cyclic Plasma Treatment during ALD Hf1-xZrxO2Deposition
2014
·
M. N. Bhuyian
, D. Misra
, et al.
·
ECS Journal of Solid State Science and Technology
·
11
PDF
HfxZr1−xO2 compositional control using co-injection atomic layer deposition
2012
·
Steven Consiglio
, Kandabara Tapily
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
11
Optimizing ALD HfO2 for Advanced Gate Stacks with Interspersed UV and Thermal Treatments- DADA and MDMA Variations, Combinations, and Optimization
2011
·
Robert D. Clark
, Steven Consiglio
, et al.
·
ECS Transactions
·
6
Physical and Electrical Properties of MOCVD Grown HfZrO4 High-k Thin Films Deposited in a Production-Worthy 300 mm Deposition System
2010
·
Steven P. Consiglio
, Cory Wajda
, et al.
·
ECS Transactions
·
5
Up to 57% Reduction in Effective Resistivity of Word Lines of 3D-NAND Memory by Grain-Size Control, Material Selection, and Seam Removal
2024
·
H. Terada
, K. Yamaguchi
, et al.
·
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
·
4
Experimental Study of 1/f1+α Noise in Transient Leakage Current of Metal–Insulator–Metal With Stacked High-k Polycrystalline Films
2020
·
Hsin-Jyun Lin
, Koji Akiyama
, et al.
·
IEEE Transactions on Electron Devices
·
4
Ultra low contact resistivity (< 1×10−8 Ω-cm2) to In0.53Ga0.47As fin sidewall (110)/(100) surfaces: Realized with a VLSI processed III–V fin TLM structure fabricated with III–V on Si substrates
2014
·
Rinus T.P. Lee
, Y. Ohsawa
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
3
Microwave plasma doping: Arsenic activation and transport in germanium and silicon
2016
·
Hidenori Miyoshi
, Masahiro Oka
, et al.
·
Japanese Journal of Applied Physics
·
2
Theoretical Studies on Fermi Level Pining of Hf-Based High-k Gate Stacks Based on Thermodynamics
2007
·
Kenji Shiraishi
, Yasushi Akasaka
, et al.
·
ECS Transactions
·
2
PDF
EOT Scaling and Flatband Voltage Shift with Al Addition into TiN
2011
·
Genji Nakamura
, Toshio Hasegawa
, et al.
·
ECS Transactions
·
1
PDF
Physical and Electrical Effects of the Dep-Anneal-Dep-Anneal (DADA) Process for HfO2 in High K/Metal Gate Stacks
2011
·
Robert D. Clark
, Shintaro Aoyama
, et al.
·
ECS Meeting Abstracts
·
1
PDF
Physical and Electrical Properties of MOCVD Grown HfZrO4 High-k Thin Films Deposited in a Production-Worthy 300 mm Deposition System
2010
·
Steven P. Consiglio
, Cory Wajda
, et al.
·
ECS Meeting Abstracts
·
1
PDF
Theoretical Studies on Metal/High-k Gate Stacks
2007
·
Kenji Shiraishi
, Yasushi Akasaka
, et al.
·
ECS Transactions
·
1
Analysis of Dielectric Prebreakdown of High-kStacking Polycrystalline MIM by Stochastic Trap-Clusters Growing and Percolation-Based Transportation
2023
·
Hsin-Jyun Lin
, Chihiro Tamura
, et al.
·
IEEE Transactions on Electron Devices
Performance Improvement by Applying High-k Materials for 3D NAND Memory Block Oxide with a Lower Thermal Budget
2022
·
Sara Aoki
, Loan Nguyenhong
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
(Invited) Electrical Performance Improvement in 300mm Ge-Based Devices
2021
·
Kandabara Tapily
, Genji Nakamura
, et al.
·
ECS Meeting Abstracts
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Works count:
37
Citation count:
326
H-index:
11
I10-index:
11
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