Work

Ultra low contact resistivity (< 1×10−8 Ω-cm2) to In0.53Ga0.47As fin sidewall (110)/(100) surfaces: Realized with a VLSI processed III–V fin TLM structure fabricated with III–V on Si substrates

Year: 2014

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2014.7047155

Authors: Rinus T.P. Lee, Y. Ohsawa, C. Huffman, Y. Trickett, G. Nakamura, C. Hatem, K.V. Rao, F. Khaja, R. Lin, K. Matthews, K. Dunn, A. Jensen, T. Karpowicz, Peter F. Nielsen, E. Stinzianni, A. Cordes, P.Y. Hung, D.-H. Kim, R.J.W. Hill, W.-Y. Loh, C. Hobbs

Institutions: Tokyo Electron (Japan), Applied Materials (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2014214569

FWCI: 1.204

Cites: 1

Cited by: 3

Related to: 10