Author

Masaaki Nakabayashi

Observed name: M. Nakabayashi

Institutions: Fujitsu (Japan), Fujitsu Semiconductor (Japan)

Observed institutions: Tokyo Institute of Technology, Tokai University, Fujitsu (Japan), Fujitsu Semiconductor (Japan)

ORCID: 0009-0001-0839-0803

Observed ORCID: 0009-0001-0839-0803

OpenAlex ID: A5108631185

Enhanced Thermal Stability in Perpendicular Top-Pinned Magnetic Tunnel Junction With Synthetic Antiferromagnetic Free Layers

2013 · Chikako Yoshida, Takashi Takenaga, et al. · IEEE Transactions on Magnetics · 32

Novel highly scalable multi-level cell for STT-MRAM with stacked perpendicular MTJs

2013 · M. Aoki, Hideyuki Noshiro, et al. · Symposium on VLSI Technology · 25

Chemical stability of CVD source materials for high-Tc superconducting films

1992 · Takuya Hashimoto, Hideomi Koinuma, et al. · Journal of materials research/Pratt's guide to venture capital sources · 17

Area dependence of thermal stability factor in perpendicular STT-MRAM analyzed by bi-directional data flipping model

2014 · K. Tsunoda, M. Aoki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13

Stress stabilization of β-tantalum and its crystal structure

1993 · Kazuaki Kondo, Masaaki Nakabayashi, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 13

Magnetic tunnel junctions for magnetic field sensor by using CoFeB sensing layer capped with MgO film

2014 · Takashi Takenaga, Yosuke Tsuzaki, et al. · Journal of Applied Physics · 11

Highly manufacturable multi-level perpendicular MTJ with a single top-pinned layer and multiple barrier/free layers

2013 · K. Tsunoda, M. Aoki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8

Ti-capping technique as a breakthrough for achieving low threshold voltage, high mobility, and high reliability of pMOSFET with metal gate and high-k dielectrics technologies

2009 · Haruhiko Takahashi, Hiroshi Minakata, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8

A highly scalable STT-MRAM fabricated by a novel technique for shrinking a magnetic tunnel junction with reducing processing damage

2014 · Y. Iba, A. Takahashi, et al. · Symposium on VLSI Technology · 7

A novel MTJ for STT-MRAM with a dummy free layer and dual tunnel junctions

2012 · K. Tsunoda, H. Noshiro, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 7

Photo‐Absorption and photochemical decomposition of copper and alkaline‐earth ß‐diketonates as source gases of high‐Tc superconducting films

1991 · Takuya Hashimoto, Koichi Kitazawa, et al. · Applied Organometallic Chemistry · 7

Photo Chemical Vapor Deposition of Metal Oxide Films Relating to Bi-Sr-Ca-Cu-O Superconductor

1991 · Hideomi Koinuma, Kaliq A. Chaudhary, et al. · Japanese Journal of Applied Physics · 7

Top-pinned perpendicular MTJ structure with a counter bias magnetic field layer for suppressing a stray-field in highly scalable STT-MRAM

2013 · Y. Iba, Chikako Yoshida, et al. · Symposium on VLSI Technology · 6

MgO Based Magnetic Tunnel Junctions With Co$_{20}$Fe$_{60}$B$_{20}$ Sensing Layer for Magnetic Field Sensors

2013 · T. Takenaga, C. Yoshida, et al. · IEEE Transactions on Magnetics · 5

Reduction of Offset Field in Top-Pinned MTJ With Synthetic Antiferromagnetic Free Layer

2014 · Chikako Yoshida, Takashi Takenaga, et al. · IEEE Transactions on Magnetics · 4

Fluorine Doping and Superconductivity of Nd2CuO4 Thin Films

1990 · Hideomi Koinuma, Kou Takeuchi, et al. · Japanese Journal of Applied Physics · 4

Development of a Pb(Zr,Ti)O3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories

2024 · Nozomi Sato, Wensheng Wang, et al. · Japanese Journal of Applied Physics · 3

Demonstration of zero-offset-field operation for top-pinned MTJ with synthetic antiferromagnetic free layer

2013 · C. Yoshida, T. Takenaga, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 3

Strain-engineering for high-performance STT-MRAM

2011 · Y. Iba, K. Tsunoda, et al. · Symposium on VLSI Technology · 3

A ferroelectric capacitor with an asymmetric double-layered ferroelectric structure comprising a liquid-delivery MOCVD Pb(Zr, Ti)O3 layer and a sputter-deposited La-doped Pb(Zr, Ti)O3 for highly reliable FeRAM

2024 · Wensheng Wang, Ko Nakamura, et al. · Applied Physics Letters · 1

Highly Reliable 4 Mb FeRAM Using a Newly Developed PLZT Capacitor With a Bi-Doped SRO Interlayer

2024 · W. Wang, T. Eshita, et al. · IEEE Electron Device Letters · 1

Scalable sensing of interconnect current with magnetic tunnel junctions embedded in Cu interconnects

2013 · T. Takenaga, Y. Tsuzaki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 1

STT-MRAM Development and Its Integration with BEOL Process for Embedded Applications

2012 · Toshihiro Sugii, Yoshihisa Iba, et al. · ECS Meeting Abstracts · 1

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Study of Capacitor Material for Advanced Memory Devices using Surface Analysis

2002 · Makoto Nakamura, Masaaki Nakabayashi · Journal of Surface Analysis · 1

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PZT capacitor with Ir/IrO2/Ir electrode fabricated by RTA

1996 · Katsuyoshi Matsuura, Masaaki Nakabayashi, et al. · Integrated ferroelectrics · 1

Works count: 32

Citation count: 190

H-index: 8

I10-index: 6