Get started
Author

F. Pascal

Observed names: F Pascal, F Pascal-Delannoy, F. PASCAL, Fabien PASCAL, Fabien Pascal, Pascal Fabien, Pascal, F, Pascal, F., Pascal, Fabien
ORCID: 0009-0001-7078-9882
Observed ORCID: 0009-0001-7078-9882
OpenAlex ID: A5108794446
Springer Handbook of Electronic and Photonic Materials
2007 · Kasap, Safa, Capper, Peter, et al. · Springer handbooks · 882
Electrical characterization of semiconductor materials and devices—review
2006 · M. J. Deen, F. Pascal · Journal of Materials Science Materials in Electronics · 118
1 ∕ f noise and percolation in carbon nanotube random networks
2007 · S. Soliveres, J. Gyani, et al. · Applied Physics Letters · 49
Noise correlation measurements in bipolar transistors. I. Theoretical expressions and extracted current spectral densities
1997 · S. Jarrix, C. Delseny, et al. · Journal of Applied Physics · 41
Growth of GaInAsSb Alloys by MOCVD and Characterization of GaInAsSb / GaSb p‐n Photodiodes
1988 · G. Bougnot, F. Delannoy, et al. · Journal of The Electrochemical Society · 41
PDF
Growth and characterization of undoped and N-type (Te) doped MOVPE grown gallium antimonide
1990 · F. Pascal, F. Delannoy, et al. · Journal of Electronic Materials · 40
Low-frequency noise in GaN/GaAlN heterojunctions
1998 · M. E. Levinshtein, F. Pascal, et al. · Applied Physics Letters · 36
Review of low-frequency noise behaviour of polysilicon emitter bipolar junction transistors
2004 · M.J. Deen, M.J. Deen, et al. · IEE Proceedings - Circuits Devices and Systems · 34
Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures
1994 · C. Delseny, F. Pascal, et al. · IEEE Transactions on Electron Devices · 27
Electrical Characterization of Semiconductor Materials and Devices
2006 · M. Deen, Fabien Pascal · Springer handbooks · 24
Electrical Characterization of Semiconductor Materials and Devices
2017 · M. Jamal Deen, Fabien Pascal · Springer handbooks · 22
Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review
2003 · M. Jamal Deen, Fabien Pascal · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 21
PDF
A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation
2011 · F. Lime, R. Ritzenthaler, et al. · Solid-State Electronics · 19
Comparison of low-frequency noise in III–V and Si∕SiGe HBTs
2004 · F. Pascal, C. Chay, et al. · IEE Proceedings - Circuits Devices and Systems · 18
Study of low frequency noise in advanced SiGe:C heterojunction bipolar transistors
2014 · M. Seif, F. Pascal, et al. · European Solid-State Device Research Conference · 16
Impact of carbon concentration on 1∕f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors
2008 · J. Raoult, F. Pascal, et al. · Journal of Applied Physics · 16
and g-r noise in AlGaAs epitaxial layers
1994 · F. Pascal, M. de Murcia, et al. · Solid-State Electronics · 15
Sensitivity and noise of micro-Hall magnetic sensors based on InGaAs quantum wells
2016 · B. Chenaud, A. Segovia-Mera, et al. · Journal of Applied Physics · 14
Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications
2014 · M. Seif, F. Pascal, et al. · Microelectronics Reliability · 14
Excess Low Frequency Noise in Single-wall Carbon Nanotube
2006 · S. SOLIVERES, A. HOFFMANN, et al. · Fluctuation and Noise Letters · 13
Comparison of low frequency noise and high frequency performances of double and simple polysilicon Bi-CMOS BJT
2000 · C Delseny, A Pénarier, et al. · Microelectronics Reliability · 13
Low frequency noise measurements of advanced BiCMOS SiGeC Heterojunction Bipolar Transistors used for mm-Wave to terahertz applications
2013 · M. Seif, F. Pascal, et al. · International Conference on Noise and Fluctuations · 12
Noise correlation measurements in bipolar transistors. II. Correlation between base and collector currents
1997 · C. Delseny, F. Pascal, et al. · Journal of Applied Physics · 12
Generation-recombination noise analysis in heavily doped p-type GaAs transmission line models
1996 · F. Pascal, S. Jarrix, et al. · Journal of Applied Physics · 11
PDF
Improvement of the crystalline, optical and electrical quality of MOVPE GaInSb layers
1991 · G. Bougnot, F. Delannoy, et al. · Journal of Crystal Growth · 10
Works count: 130
Citation count: 1,713
H-index: 16
I10-index: 25
Year
Topic
Type