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A. Rahal

Study of boron doped amorphous silicon lightly hydrogenated prepared by DC magnetron sputtering for infrared detectors applications
2020 · Khadidja Ketroussi, Rabah Cherfi, et al. · Infrared Physics & Technology · 12
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Density of states in the channel material of low temperature polycrystalline silicon thin film transistors
2000 · K Mourgues, A Rahal, et al. · Journal of Non-Crystalline Solids · 12
Temperature effect on hydrogenated amorphous carbon leading to hydrogenated graphene by pulsed laser deposition
2017 · R.H. Benhagouga, S. Abdelli-Messaci, et al. · Applied Surface Science · 11
Study of morphological and electrical properties of the ZnO/p-Si hetero-junction: Application to sensing efficiency of low concentration of ethanol vapor at room temperature
2020 · S. Tata, L. Chabane, et al. · Materials Science in Semiconductor Processing · 10
State creation induced by gate bias stress in unhydrogenated polysilicon TFTs
1999 · B. Tala-Ighil, A. Rahal, et al. · Thin Solid Films · 10
The annealing temperature effect on the electrical properties of boron‐doped hydrogenated amorphous silicon a‐Si:H(B)
2010 · N. Khelifati, S. Tata, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 9
Gate bias stress in hydrogenated and unhydrogenated polysilicon thin film transistors
1998 · B. Tala-Ighil, H. Toutah, et al. · Microelectronics Reliability · 4
Sustainable Wafer-Scale Integration of Epitaxial ZnO on Silicon for Piezoelectric Devices
2025 · David Sanchez-Fuentes, Abbes Rahal, et al. · ACS Applied Materials & Interfaces · 3
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Deposition temperature effects on the characteristics of a‐Si:H deposited by pulsed DC magnetron sputtering
2009 · R. Cherfi, A. Abdelmoumene, et al. · physica status solidi (a) · 3
Study of Band Tails in a-SiGe:H Alloys from Time of Flight and Thermally Stimulated Current Experiments
1990 · C. Longeaud, J. P. Kleider, et al. · MRS Proceedings · 3
High sensing efficiency for low NH3 vapour concentration of thin ZnO/p-Si hetero-junctions
2025 · S. Tata, L. Chabane, et al. · Sensors and Actuators A Physical · 2
Effects of trimethylphosphine incorporation on hydrogenated amorphous silicon (a-Si:H) properties
2009 · A. Brighet, R. Cherfi, et al. · Physics Procedia · 2
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Electronic Transport Properties of High Deposition Rate a-Si:H Material
1991 · T. Mohammed-Brahim, A. Rahal, et al. · Springer eBooks · 2
Numerical simulation and validity of the surface photovoltage method in amorphous silicon with a Schottky contact
2018 · K Hammoudi, S Tata, et al. · Semiconductor Science and Technology · 1
Effects of Hydrogen Partial Pressure on Boron-Doped Hydrogenated Amorphous Silicon (a-Si:H(B)) Properties
2009 · N. Khelifati, R. Cherfi, et al. · Materials science forum · 1
Study of the stability of polycrystalline silicon by means of the behavior of thin film transistors under gate bias stress
2002 · T. Mohammed-Brahim, A. Rahal, et al. · Journal of Non-Crystalline Solids · 1
Leakage Current of Unhydrogenated Solid Phase Crystallized Silicon Thin Film Transistors
1999 · B. Tala-Ighil, A. Rahal, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 1
Properties of a‐SiGe:H thin films: correlation between photosensitivity and density of states
2014 · Lamia Laidoudi, Abdelkrim Fedala, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
Effect of hydrogen and germanium concentrations on hydrogenated amorphous silicon germanium
2009 · Laidoudi, L., Rahal, A., et al. · HAL
The annealing temperature effect on the electrical properties of boron-doped hydrogenated amorphous silicon a-Si:H(B)
2009 · Khelifati, N., Tata, A., et al. · HAL
Stability of unhydrogenated polysilicon thin film transistors and structural quality of the channel material
2001 · H. Toutah, B. Tala-Ighil, et al. · Thin Solid Films
Stabilité de différentes structures de silicium
2000 · A. M. Rahal
Works count: 22
Citation count: 87
H-index: 6
I10-index: 5
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