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Shoichi Ono

Observed names: Ono, Shoichi, SHOICHI ONO, Shoich Ono, Shoichi ONO, Shoichi Ono Shoichi Ono
OpenAlex ID: A5111664520
A layered ionic crystal of polar Li@C60 superatoms
2010 · Shinobu Aoyagi, Eiji Nishibori, et al. · Nature Chemistry · 297
Low-Temperature Epitaxial Growth of Si/Si1-xGex/Si Heterostructure by Chemical Vapor Deposition
1994 · Junichi Murota Junichi Murota, Shoichi Ono Shoichi Ono · Japanese Journal of Applied Physics · 99
Preparation of endohedral fullerene containing lithium (Li@C60) and isolation as pure hexafluorophosphate salt ([Li+@C60][PF6−])
2012 · Hiroshi Okada, Takashi Komuro, et al. · RSC Advances · 83
Emission characteristics of metal–oxide–semiconductor electron tunneling cathode
1993 · Kuniyoshi Yokoo, Hiroshi Tanaka, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 82
Active control of the emission current of field emitter arrays
1995 · Kuniyoshi Yokoo, Manabu Arai, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 77
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Proposal of a high efficiency tube for high power millimetre or submillimetre wave generation The gyro-peniotron
1984 · SHOICHI ONO, KUNIO TSUTAKI, et al. · International Journal of Electronics · 55
Energy distribution of tunneling emission from Si-gate metal–oxide–semiconductor cathode
1994 · Kuniyoshi Yokoo, Shinji Sato, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 50
Silicon atomic layer growth controlled by flash heating in chemical vapor deposition using SiH4 gas
1993 · Junichi Murota, Masao Sakuraba, et al. · Applied Physics Letters · 43
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Fabrication of a Si1-xGex Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Containing High Ge Fraction Layer by Low-Pressure Chemical Vapor Deposition
1993 · Kinya Goto, Junichi Murota, et al. · Japanese Journal of Applied Physics · 42
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Stability of the dimer structure formed on Si(100) by ultraclean low-pressure chemical-vapor deposition
1994 · Masao Sakuraba, Junichi Murota, et al. · Journal of Applied Physics · 39
Electron-cyclotron-resonance plasma-enhanced chemical vapor deposition of epitaxial Si without substrate heating by ultraclean processing
1991 · Koichi Fukuda, Junichi Murota, et al. · Applied Physics Letters · 30
Growth of single crystalline γ-Al2O3 layers on silicon by metalorganic molecular beam epitaxy
1992 · Hirohisa Iizuka, Kuniyoshi Yokoo, et al. · Applied Physics Letters · 29
Effects of Ion Energy Control on Production of Nitrogen–C60 Compounds by Ion Implantation
2006 · Shigeyuki Abe, Genta Sato, et al. · Japanese Journal of Applied Physics · 24
Atomic-layer epitaxy control of Ge and Si in flash-heating CVD using GeH4 and SiH4 gases
1994 · Masao Sakuraba, Junichi Murota, et al. · Applied Surface Science · 24
Atomic layer epitaxy of germanium on silicon using flash heating chemical vapor deposition
1991 · Masao Sakuraba, Junichi Murota, et al. · Journal of Crystal Growth · 24
Modified peniotron using a TE11rectangular waveguide cavity
1985 · MOHAMAD RAZEGHI, NOBUYUKI SATO, et al. · International Journal of Electronics · 18
Low-Temperature Surface Cleaning of Si and Successive Plasma-Assisted Epitaxial Growth of GaAs
1987 · Qing Zhu Gao, Takashi Hariu, et al. · Japanese Journal of Applied Physics · 16
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Comment on ’’Traveling wave oscillations in the optical region: A theoretical examination’’
1975 · Koji Mizuno, Shoichi Ono · Journal of Applied Physics · 14
Experiments on the high efficiency operation of the modified peniotron oscillator
1989 · KUNIYOSHI YOKOO, MOHAMAD RAZEGHI, et al. · International Journal of Electronics · 12
Control of composition and deposition rate in Si-Ge CVD epitaxy on Si
1991 · Manabu Kato, Junichi Murota, et al. · Journal of Crystal Growth · 10
Experimental study of the modified peniotron using TE,, rectangular waveguide cavity
1988 · KUNIYOSHI YOKOO, TAKEHISA SUZUKI, et al. · International Journal of Electronics · 10
Auto-resonant peniotron oscillator (ARPO) for generation of millimetre and submillimetre waves
1990 · KUNIYOSHI YOKOO, NOBUYUKI SATO, et al. · International Journal of Electronics · 9
Cyclotron fast-wave tube using spatial harmonic interaction — the travelling wave peniotron
1963 · Shoichi Ono, Kazuhiko Yamanouchi, et al. · Microwaves · 6
Low-temperature Si/Si1−xGex/Si heterostructure growth at high Ge fractions by low-pressure chemical vapor deposition
1992 · Reiner Schütz, Junichi Murota, et al. · Applied Physics Letters · 5
Auto-resonant eniotron oscillator using a magnetron type cavity
1991 · Stephen Musyoki, Kuniyoshi Yokoo, et al. · International Journal of Electronics · 5
Works count: 58
Citation count: 1,130
H-index: 16
I10-index: 21
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