Author

C. J. Miner

Observed names: C J Miner, C. Miner, C.J. Miner, Carla J. Miner, Carla Miner, Miner, Carla J.

Observed institutions: Université de Sherbrooke, Nortel (Canada), Bell (Canada), Institute for Microstructural Sciences, National Research Council Canada

OpenAlex ID: A5111847891

Planar InP/InGaAs avalanche photodetectors with partial charge sheet in device periphery

1990 · L. E. Tarof, D. G. Knight, et al. · Applied Physics Letters · 71

Photoluminescence and double-crystal x-ray study of InGaAs/InP: Effect of mismatch strain on band gap

1989 · I. C. Bassignana, C. J. Miner, et al. · Journal of Applied Physics · 70

Transparent conducting zinc oxide and indium–tin oxide films prepared by modified reactive planar magnetron sputtering

1983 · S. Maniv, C. J. Miner, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 60

Studies and modeling of growth uniformity in molecular beam epitaxy

1991 · Z. R. Wasilewski, G. C. Aers, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 49

High rate deposition of transparent conducting films by modified reactive planar magnetron sputtering of Cd2Sn alloy

1981 · S. Maniv, C. Miner, et al. · Journal of Vacuum Science and Technology · 46

A spatially resolved spectrally resolved photoluminescence mapping system

1990 · C.J.L. Moore, C.J. Miner · Journal of Crystal Growth · 37

Blueshifting of InGaAsP/InP laser diodes by low-energy ion implantation

1997 · M. Paquette, J. Beauvais, et al. · Applied Physics Letters · 30

Epitaxial layer thickness measurements by reflection spectroscopy

1989 · L. E. Tarof, C. J. Miner, et al. · Journal of Electronic Materials · 29

Metalorganic chemical-vapour-deposition growth and characterization of GaAs

1985 · C. Blaauw, C. Miner, et al. · Canadian Journal of Physics · 29

The optimization of metal—Insulator—Metal nonlinear devices for use in multiplexed liquid crystal displays

1981 · D.R. Baraff, J.R. Long, et al. · IEEE Transactions on Electron Devices · 28

High-reliability blue-shifted InGaAsP/InP lasers

1996 · J.-P. Noël, D. Melville, et al. · Applied Physics Letters · 27

Heteroepitaxial growth and characterization of GaAs on silicon-on-sapphire and sapphire substrates

1989 · T. P. Humphreys, C. J. Miner, et al. · Applied Physics Letters · 27

Free-carrier density determination in p-type GaAs using Raman scattering from coupled plasmon-phonon modes

1988 · Kam Wan, Jeff F. Young, et al. · Journal of Applied Physics · 25

Determination of donor and acceptor impurity concentrations in n-InP and n-GaAs

1987 · M. Benzaquen, K. Mazuruk, et al. · Journal of Electronic Materials · 20

Characterization of Mg-doped InP grown by MOCVD using a bis(methylcyclopentadienyl)magnesium dopant source

1989 · C. Blaauw, R. A. Bruce, et al. · Journal of Electronic Materials · 17

Implant-damage isolation of InP and InGaAsP

1993 · U. G. Akano, I. V. Mitchell, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 16

Ion implantation damage of InP and InGaAs

1995 · U.G. Akano, I.V. Mitchell, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 15

Silicon incorporation in InP during LP-MOCVD using disilane

1990 · C. Blaauw, F. R. Shepherd, et al. · Journal of Electronic Materials · 15

Variation in the lattice parameter and crystal quality of commercially available Si-doped GaAs substrates

1997 · I.C. Bassignana, D.A. Macquistan, et al. · Journal of Crystal Growth · 14

Growth uniformity studies in molecular beam epitaxy

1991 · Z.R. Wasilewski, G.C. Aers, et al. · Journal of Crystal Growth · 14

The effect of implant temperature and beam flux on damage accumulation and Si activation of Si-implanted InP

1992 · U. G. Akano, I. V. Mitchell, et al. · Canadian Journal of Physics · 13

Non-destructive, whole wafer assessment of optoelectronic epitaxial materials

1992 · C J Miner · Semiconductor Science and Technology · 13

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Epitaxial layer thickness measurement of double heterostructures using reflectance spectroscopy