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Author

H. Bu

Observed name: Hekai Bu
Institution: Wuhan University
ORCID: 0009-0009-6881-3415
Observed ORCID: 0009-0009-6881-3415
OpenAlex ID: A5113586249
GPUMD 4.0: A high‐performance molecular dynamics package for versatile materials simulations with machine‐learned potentials
2025 · Ke Xu, Hekai Bu, et al. · Materials Genome Engineering Advances · 136
35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS
2004 · P.R. Chidambaram, B.A. Smith, et al. · Symposium on VLSI Technology · 91
On the defect structure due to low energy ion bombardment of graphite
1995 · D. Marton, H. Bu, et al. · Surface Science · 74
Ne** autoionizing states and Ne+ charge fractions scattered from a magnesium surface
1990 · O. Grizzi, M. Shi, et al. · Physical review. B, Condensed matter · 71
Composition control of Hf1−xSixO2 films deposited on Si by chemical-vapor deposition using amide precursors
2002 · B. C. Hendrix, A. S. Borovik, et al. · Applied Physics Letters · 67
Advanced CMOS transistors with a novel HfSiON gate dielectric
2003 · A.L.P. Rotondaro, M.R. Visokay, et al. · Symposium on VLSI Technology · 58
Sub-25nm FinFET with advanced fin formation and short channel effect engineering
2011 · Takashi Yamashita, V. Basker, et al. · Symposium on VLSI Technology · 34
Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics
2003 · A. Shanware, M.R. Visokay, et al. · IEEE International Reliability Physics Symposium proceedings · 25
Structure of benzene and phenol chemisorbed on Ni{110}
1993 · H. Bu, P. Bertrand, et al. · The Journal of Chemical Physics · 25
A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs
2015 · T. Yamashita, S. Mehta, et al. · Symposium on VLSI Technology · 23
Direct determination of crystal surface periodicity from scattering and recoiling azimuthal anisotropy
1991 · F. Masson, H. Bu, et al. · Surface Science · 23
An enhanced 90nm high performance technology with strong performance improvements from stress and mobility increase through simple process changes
2004 · R. Khamankar, H. Bu, et al. · Symposium on VLSI Technology · 21
Transistor optimization for leakage power management in a 65 nm CMOS technology for wireless and mobile applications
2004 · S. Zhao, A. Chatterjee, et al. · Symposium on VLSI Technology · 19
Effect of nitride sidewall spacer process on boron dose loss in ultrashallow junction formation
2004 · P. Kohli, Amitabh Jain, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 17
Orientation of single crystalline paraffin thin films from time-of-flight direct recoil spectrometry
1993 · P. Bertrand, H. Bu, et al. · The Journal of Physical Chemistry · 14
Reliability evaluation of HfSiON gate dielectric film with 12.8 Å SiO/sub 2/ equivalent thickness
2002 · A. Shanware, J. McPherson, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
Scattering and recoiling analysis of oxygen adsorption site on the Ir{110}-c(2×2)-O surface
1991 · H. Bu, M. Shi, et al. · The Journal of Chemical Physics · 11
Modeling the effect of source/drain sidewall spacer process on boron ultra shallow junctions
2003 · S. Chakravarthi, P. Kohli, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 10
Phenomenological model for "stress memorization" effect from a capped-poly process
2005 · L.S. Adam, C. Chiu, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 8
Interactions of B dopant atoms and Si interstitials with SiO2 films during annealing for ultra-shallow junction formation
2005 · P. Kohli, A. Jain, et al. · Journal of Applied Physics · 7
Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation
2004 · P. Kohli, S. Chakravarthi, et al. · Materials Science and Engineering B · 6
45-nm node NiSi FUSI on nitrided oxide bulk CMOS fabricated by a novel integration process
2006 · S. Yu, J.-P. Lu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 5
Physical characterization of sub‐32‐nm semiconductor materials and processes using advanced ion beam–based analytical techniques
2012 · M. J. P. Hopstaken, D. Pfeiffer, et al. · Surface and Interface Analysis · 4
Manufacturing Benefits of Disilane as a Precursor for Polycrystalline Silicon Films for the Advanced CMOS Gate Electrode
2005 · Y. Chen, H. Bu, et al. · IEEE Transactions on Semiconductor Manufacturing · 4
Angular anisotropy of surface multiple scattering: analysis of carbon contamination on an Ir{110} surface
1992 · H. Bu, S.V. Teplov, et al. · Surface Science · 4
Works count: 32
Citation count: 775
H-index: 14
I10-index: 18
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