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Author

Karri Aswini

Institution: REVA University
Observed institution: REVA University
ORCID: 0009-0005-0232-8805
Observed ORCID: 0009-0005-0232-8805
OpenAlex ID: A5116553365
Enhanced microstructure and electrical performance of a cost-effective Ni/Cu/n-GaN Schottky diode with a V2O5 interlayer for optoelectronic applications
2025 · Karri Aswini, K. Munirathnam, et al. · Journal of Materials Science Materials in Electronics · 8
Tuning barrier height and enhancing electrical properties of MOS heterojunctions using Fe2O3 doped MoO3 nanocomposite interlayer on Ni/Cr/n-GaN for optoelectronic devices
2025 · Karri Aswini, Chaitanya Kumar Kunapalli, et al. · Physica B Condensed Matter · 4
Enhanced Ni/Cu/n-GaN Schottky junctions via Fe2O3:Bi2O3 nanocomposite interfacial engineering
2026 · Karri Aswini, Chander Amgoth Pawar, et al. · Journal of Materials Science Materials in Electronics
Correction to: Enhanced microstructure and electrical performance of a cost-effective Ni/Cu/n-GaN Schottky diode with a V2O5 interlayer for optoelectronic applications
2025 · Karri Aswini, K. Munirathnam, et al. · Journal of Materials Science Materials in Electronics
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Works count: 4
Citation count: 12
H-index: 2
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